SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpose applications The LL103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. These diodes are also available in the DO-35 case with the type designation SD103A to SD103C ,in the SOD-123 case with the type designation SD103AW Dimensions in inches and (millimeters) to SD103CWand in the SOD-323 case with typedesignation SD103AWS to SW103CWS MECHANICAL DATA Case: Mini-MELF glass case(SOD-80 ) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) VRRM VRRM VRRM Ptot IFSM TJ TSTG Peak Reverse Voltage Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 60Hz sine wave Junction temperature Storage Temperature Range 15 V V V mW A 125 C 40 30 20 400 1) -55 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Leakage current at VR=30V V R=20V VR=10V IR IR IR Forward voltage drop at IF=20mA IF=200mA 5 5 5 A A A 0.37 0.6 V V Junction Capacitance at V R=0V ,f=1MHz CJ 50 pF Reverse Recovery time at IF=IR=50mA,recover to 200mA trr 10 ns recover to 0.1 IR Figure 1. Typical variation of forward current vs. Forward. Voltage for primary conduction through the schottky barrier Figure 2. Typical high current forward conduction curve tp=300ms,duty cycle=2% IF(mA) A Tj= 25 C IF IF VF VF Figure 3. Typical non repetitive forward surge current versus pulse width A mA IF IF ms tp VR Figure 5. Blocking deration versus temperature at various average forward currents V VR TA Figure 6. Typical capacitance versus reverse voltage pF Ctot