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
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
MECHANICAL DATA
ABSOLUTE RATINGS(LIMITING VALUES)
ELECTRICAL CHARACTERISTICS
For general purpose applications
The LL103 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level
applications. Other applications are click suppressions, efficient full wave
bridges in telephone subsets, and blocking diodes in rechargeable low
voltage battery systems.
These diodes are also available in the DO-35 case with the type
SD103A to SD103C ,in the SOD-123 case with the type
to SD103CWand in the SOD-323 case with type
designation
designation SD103AW
designation SD103AWS to
SW103CWS
Leakage current at V =30V
R
V =20V
V =10V
R
R
Forward voltage drop at
I=20mA
I =200mA
F
F
(Ratings at 25 C ambient temperature unless otherwise specified)
0.37
0.6
5
5
5
50
10
Reverse Recovery time at I =I =50mA,recover to 200mA
recover to 0.1 R
FR
I
Junction Capacitance at V =0V ,f=1MHz
R
V
RRM
V
RRM
V
RRM
mW
A
V
V
V
T
STG
P
tot
T
J
Power Dissipation (infinite Heat Sink)
Peak Reverse Voltage
Storage Temperature Range
Junction temperature
Maximum Single cycle surge 60Hz sine wave
-55 to+150 C
C
V
V
µ
A
µ
A
µ
A
pF
ns
I
FSM
I
R
I
R
I
R
C
J
t
rr
125
15
400
1)
40
30
20
1) Valid provided that electrodes are kept at ambient temperature
Case
Weight
:
:
Mini-MELF
glass case(SOD-80 )
Approx. 0.05 gram
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Dimensions in inches and (millimeters)
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





    


  









  


 
I(mA)
F
T = 25 C
j
A
AmA
ms
Figure 1. Typical variation of forward current vs. Forward.
Voltage for primary conduction through the
schottky barrier
Figure 2. Typical high current forward
conduction curve t =300ms,duty cycle=2%
p
V
F
V
F
V
R
I
F
I
F
I
F






Figure 3. Typical non repetitive forward surge
current versus pulse width
t
p
I
F
















V
pF
Figure 5. Blocking deration versus
at various average forward currents
temperature
T
A
V
R
    


Figure 6. Typical capacitance versus
reverse voltage
C
tot