Order this document
by 2N~42MD I
2N6342A
thru
2N6349A
I
‘T2~MT’ “-
BIDIRECTIONAL TRIODE THYRISTORS
. . . designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies;
or wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from ablocking to aconducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
.Blocking Voltage to 800 Volts ~..:!
.Ail Diffused and Gla~ Passivated Junctions for Greater Parameter ,* ~+$
Uniformity and Stability .,:$ .~.
~,,+~i~$,,~,%,,.~i.x
*Small, Rugged, Thermowatt Construction for Low Thermal l+? ~~
~~i;.:.l
Resistance, High Heat Dissipation and Durability !$.$\,,
l:.rj
~?it\~N, .,.
.Gate Triggering Guaranteed in Two Modes (2 N6342A, 2N~34~,
2N6344A, 2N6345A) or Four Modes (2 N6346A, ~~$~~~?
2N6348A, 2N6349A) ‘i.~>
..:
.8 Ampere Devices Available as 2N6342 thru 2~34@*
\
Unit
volts
Amp
Amps
A2~
200 41-J
NOTE:
400
600
800
1. DIM. L& HAPPLIES
TO ALL LEADS,
STYLE 4:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
12
6.0
120
~~uit Fusing I2t 59
WJ =-40to+110°C, t=8.3 ms)
*Peak Gate Power (Tc: -..
Average Gate Power (Tc =+80°C, t=8,3 ms) PG(AV) 0.5
“Peak Gal -
d’
=+80°C, Pulse Mdth =2.OUS IPG MI20 a
Watt
Amp
volts
c
Oc
te Lurrent Il~nfl I2.0
‘Peak Gate Voltage VGM *IO
‘Operating Junction Temperature Range TJ -40to+llo
‘Storage Temperature Range Tstg -40 to +150
-HERMAL CHARACTERISTIC
Characteristic ISymbol Max Unit
‘Thermal Resistance, Junction to Case Rej~ 2.0 Ocm 1CASE 221A-02
TO-220Aa
~lndicatesJEDEC Registered Data. I
I
Therm owatt is aTrademark of Motorola Inc. MOTOROLA INC., 1980 DS 6547 F
ELECTRICAL CHARACTER ISTICS (Tc =250 and either polarity of MT2 to MTI voltage, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
*Peak Off-State Current IDRM 2.0 mA
VD =Rated VDRM,TJ =110°C, Gate Open
*Peak On-State Voltage VTM 1.3 1.75 volts
ITM =17 APeak; Pulse Width =1.0 to 2.0 ms, Dutv Cycle S2.0 %*,\
Gate Trigger Current, Continuous dc *’S,,
IGT ~&;s>~$
VD=12Vdc, RL=1000hms ‘.r.:.l
\,j$>$*
,,”,.,‘“:;
Minimum Gate Pulse Width =2.0 ES $,,
AL ~.~1:
*,,,‘,$.,,,6,,,!*,
MT2 (+), G(+) All Tvpes 6.0 50 ,~~y<’~$?;”’%
MT2 (+), G(-) 2N6346A thru 2N6~9A 6.0 ~~> Q:: :i&
MT2 (-), G(-I All Tvpes 10 .qa,d
MT2 (-), G(t) 2N6346A thru 2N6349A 25 ,t:n,zp=,f’
*MT2 (+), G(t); MT2 (-), G(-) TC =-400C All Types —. ‘~)!~~a
*MT2 (+), G(-); MT2 [-), G(t) Tc =-40°C 2N6346A thru 2N6349A ?{;;.
,,’?
125
‘l’i.<.-t+:t:;!
:,
*Peak Gate Trigger Voltage VGT ~h.“,1.Ii!,p, volts
VD= 12 Vdc, RL= 100ohms ,,>:*w,.
,..>
,,‘$$i$j::’,~$~.
Minimum Gate Pulse Width =2.0 ps ‘~’$,k~\<.kT’
~i~:,.\,,.%,,3!},..
MT2 (+), G(+) All Types ‘‘:;Y:6.9 2.0
MT2 (+), G(-) 2N6346A thru 2N6349A .,,
_}!* ‘:5,, 0.9 2.5
MT2 (-1, G(-) All Types *l’\.*,
.,$..$;~,
,fs,=$.S3 1.1 2.0
MT2 (-), G(+) 2N6346A thru 2N6349A \,y .z3.
$<, ‘>
~~:: 1.4 2.5
:$.,,,
MT2 (+), G(+); MT2 (-), G(-) Tc =-40°C All Tvpes ,.*
:*> .>C:*&.
,8)
,,,:. 2.5
*MT2 (+], G(-); MT2 (-), G(+) Tc =-40°C 2N6346A thru 2N6349A ..’,,:
.l?.,
~,,J..
‘~$,:k~ 3.0
VD =Rated VDRM, RL =10k ohms, TJ =lOO°C ..1,.
,~>f<.:,
~~>:im,
*MT2 {t), G(+); MT2 (-), G(-) All Types ,,,$.$!..,,.,,
.$’\. 0.2
:/,:’
*MT2 (+), G(-); MT2 (-), G(+) 2N6346A thru 2N6349A
.,.:1
‘\l$\\,
.! *,,,>*.*? 0.2
Holding Current
}
‘+$l,;*:~~, IHrnA
VD= 12 Vdc, Gate Open Tc =25°C<&:@ 6.0 40
IT= 200 mA *TG@ -4@C 75
*Turn-On Time ,.!$.”..,+*
.::$”~ tgt 1.5
+!{,*. .Y 2.0 ps
VD =Rated VDRM, ITM =17A ‘$!!
+’J#$\.,:,t\.::,,,
IGT =120 mA, RiseTime =0.1 ps, ,.
,q..s~
.’.:i!,:t>
...*Y,,.<.. .\\
Pulse Width =2.0 #s ~.,.i,.i.....
..\>.~.,,.
Critical Rate of Rise of Commutation Voltage ,X,,,~$~~,&~’ dvldt (c) 5.0 Vlps
VD =Rated VDRM, ITM =17A, Commu~~~~
di/dt =6.5 Alms, Gate Unenergized “$’ij$,,~$
TC =80°C ..:.;,,. $,<,,,.
...
,,?: .
.,s
.>:>,.“’’$.5,..,.st’~
I ! I ,1iI1
m!II
:80 -“v” h
*\
~=CONDuCTIONANGLE \
dc’ \
70o2.0 4.0 6.0 8.0 10 12 14
20 dc.
II[[
16
‘% ,
~ap
J.
I1i11~
02.0 4.0 6.0 8,0 10 12 14
IT(RMS), RMS ON.STATE CURRENT, (AMP) IT(RMS), RMS ON-SfATE CURRENT (AMP)
@MOTOROLA Semiconductor Products Inc.
a
FIGURE 3- TYPICAL GATE TRIGGER VOLTAGE FIGURE 4–TYPICAL GATE TRIGGER CURRENT
1.8 I I I I
OFFSTATE VOLTAGE= 12V—
w
a
$1.2
d
9
c1.0
w
w
~0.8
+
u
$0.6
--
>= 0.4-60 -40 020 40 60 80 100 120 140
’20 TJ, JUNCTION TEMPERATURE (°C)
FIGURE 5ON3TATE CHARACTERISTIC
lnnl ,.<.!:,:
I,,.>~
--- ,II I 1/1/ m<,%
~:.,~.s.:,., ,GATE OP;N
70 Ax .\? >{.:
+4 }~, *:* \
I I ~*,\t\,.:~.:it}:f MAIN TERMINAL =1
POSITIVE
50 -=,“ \ \
\
\
Zo \
/“ \.
/\
..MAIN TERMINAL ?2.
TJ =100°C POSITIVE
10 \
GIII I
=,#
~
+7.0
~60 80 100 120 140
E5.0 rl .. ,s,. ~~
a
3NTJ, JUNCTION TEMPERATURE (DC)
v
u
:3.0
v
z
0
m2.0 -FIGURE 7MAXIMUM NON-REPETITIVE SURGE CURRENT
3
0
w
z100
a
+
z
a
~
0.3
0.2
0.1 !
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
I
I I I -1 I I I 1“1
10 2.0 3.0 5.0 7.0 10
~M, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
(M)MOTOROLA Semiconductor Products Inc.
FIGURE 8 TYPICAL THERMAL RESPONSE
*t.., ~s.
;l..
Motorolareserves~~~:rnakechanges withoutfudhernoficetoany products herein. Motorola makesnowarranty, representationorguerantee regarding
the suitability ot~,m@s for any particular pur~e, nor does Motorola assume any tiabitityarising out of the appficetion or use of any product or circuit,
andspecifi~k~dl~~s anyandall Iiebihty,includingtithoutflmitafion consequential orincidentel damages. ‘TypiW parameters cananddovaryin different
application. All,~&ating parameters,including ‘Typicals” must bevalidated for eachcustomer appticetion by customer’s technical experts. Motorola does
not m~%~.~.~nse underits patent rights northe rights of others. Motorola products are not designed, intended, or authorized for use ascomponents in
syste~,-ed for surgi~l implant intothe body,or other appticetions intended to support or sustain tife, or for any other appflcation inwhich the failure of
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aga~ all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or in~rectly, any claim of personal inju~ or death
8
associatedwit uchunintendedor unauthorized use,even if suchclaim alleges that Motorola was negligent regarding the design or manufatiure of the part.
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EUROPE Motorola Ltd.; European Literature Centrw 88Tanners Drive, Blskelands, Milton Keynes,MK145BP, England.
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O
MMOTOROLA
744G1 PRINTEO IN USA {1994) MPSFOD 2N634WD
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