TLE5045iC
Technical product description
High End GMR Wheel Speed Sensor, ASIL B(D)
About this document
Scope and purpose
High-level description of the product features and technical characteristics as primary information about the
functionality of the TLE5045iC High End GMR Wheel Speed Sensor, ASIL B(D)
Intended audience
Automotive suppliers interested in wheel speed sensor applications
About this product
Description
Infineon's TLE5045iC is a wheel speed sensor without direction detection designed for sophisticated vehicle
control systems. As the successor of the TLE5041plusC the sensor shows best-in-class jitter performance, thus
being the best choice for wheel speed applications. The rotational speed is sensed with high accuracy, enabling
the sensor to be used as a component of indirect tire pressure monitoring systems (iTPMS). It is based on
integrated giant magneto resistance (iGMR). Excellent sensitivity to magnetic field is specified over a wide
temperature range. To meet harsh automotive requirements, robustness to electrostatic discharge (ESD) and
electromagnetic compatibility (EMC) was maximized without the need of additional external components.
Figure 1 Product photo
Technical Product Description Please read the Important Notice and Warnings at the end of this document Revision 1.0
www.infineon.com 2018-11-06
Features & Benefits
Developed according to ISO 26262, compliant with the requirements of ASIL B(D)
Low jitter 0.02% due to high switching accuracy enables iTPMS
Two-wire current interface 7mA/14mA providing speed information
Wide operating junction temperature range -40°C to 190°C
Robustness against external magnetic disturbances up to 2mT through dierential sensing principle
High sensitivity enables outstanding air gap performance along with immunity against y-displacement
eects
Small sensor package 5x3mm without need of external capacitor saves module size, increases robustness
against mechanical stress, and enables design freedom
Advanced EMC concept maximizes the availability of the sensor signal
New established Micro Break feature designed to be immune against disturbances on supply line
Order Information
Table 1
Type Description Ordering
Number
TLE5045iC-R050 Speed only sensor optimized for use with load resistor Rm
50 Ω
SP001649080
TLE5045iC-R100 Speed only sensor optimized for use with load resistor 50 Ω ≤
Rm ≤ 100 Ω
SP001216864
TLE5045iC
Technical product description
About this product
Technical Product Description 2 Revision 1.0
2018-11-06
Table of contents
About this document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
About this product . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1 Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
3 Speed Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Safety Mechanisms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 ESD and EMC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 ESD HBM Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
7 Product Qualification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
9 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
TLE5045iC
Technical product description
Table of contents
Technical Product Description 3 Revision 1.0
2018-11-06
1 Product Characteristics
Absolute Maximum Ratings
Stresses above the maximum values listed here may cause permanent damage to the device.
Table 2
Parameter Symbol Min. Typ. Max. Unit Note / Test Condition
Supply voltage VDD - - 24 V max. 30 min @ TJ = 25 +/- 5°C
-0.6 - - V TJ < 80°C, IDD reverse current limit
applies
Reverse current IDD -200 - - mA t = max 4 h
Junction temperature TJ-40 - 190 °C max 4 h, < 16.5 V
Magnetic flux density Bmax_x
Bmax_y
- - 250 mT max. 1min @ TA ≤ 85°C
Bmax_z - - 500 mT max. 1min @ TA ≤ 85°C
Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation.
Table 3
Parameter Symbol Min. Typ. Max. Unit Note / Test Condition
Supply voltage VDD 5.2 - 20 V TLE5045iC-R100
VDD 4.25 - 20 V TLE5045iC-R050
Operating Temperature TJ-40 190 °C
Magnetic signal frequency fmag 0.03 - 3000 Hz
Minimum dierential magnetic
input signal amplitude,
magnetic encoder application
dBlimit_x
TA = 25°C
70 90 110 µT 99% criterium
Magnetic induction amplitude
at each GMR
sensing element
Bx-25 - 25 mT
Dynamic and static
homogeneous external
disturbance fields
Bext_XYZ -2 2 mT no unwanted pulses
TLE5045iC
Technical product description
1 Product Characteristics
Technical Product Description 4 Revision 1.0
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Functional Parameters
The magnetic input is assumed sinusoidal with constant amplitude and oset. The typical values shown below
are valid for VDD = 12 V and TA = 25°C. For a more detailed specification please refer to our product datasheets
which are available on request.
Table 4
Parameter Symbol Min. Typ. Max. Unit Note / Test Condition
Period jitter Sjit - ±0.02 % ± 1 σ value
Duty cycle DC 40 - 60 % in calibrated mode
Supply current during static
output low state
Ilow 5.95 7 8.05 mA
Supply current during static
output high state
Ihigh 11.9 14 16.1 mA
Current level for indicating
errors
IError 1 3.5 3.8 mA
Output current slew rate SRr, SRf11 - 28 mA/
μs
SRr = (I90% - I10%) / tr
SRf = (I90% - I10%) / tf
Switch-o voltage Vreset 3.5 V direct on sensor pins
Supply voltage hysteresis VHys 1.5 1.7 V TLE5045iC-R100
Supply voltage hysteresis VHys 0.65 0.75 V TLE5045iC-R050
TLE5045iC
Technical product description
1 Product Characteristics
Technical Product Description 5 Revision 1.0
2018-11-06
2 Functional Description
The sensor element has a magnetic interface to detect the increments of a magnetized encoder: the sensing
principle is based on the giant magneto resistance (GMR) principle sensitive to magnetic fields in x-direction. It
is designed for maximum sensitivity and suppression of homogeneous fields.
In the figure below the typical placement of the TLE5045iC facing a magnetic encoder wheel is shown. The
figure also indicates the coordinate system, which is valid throughout this document.
Figure 2 Typical placement of the TLE5046iC
TLE5045iC
Technical product description
2 Functional Description
Technical Product Description 6 Revision 1.0
2018-11-06
3 Speed Protocol
The first output pulse is generated when the input field exceeds the minimal magnetic threshold 2 x dBlimit.
Aer minimum and maximum are detected and oset is compensated, output switching occurs at zerocrossing
of the dierential magnetic signal.
t
Δ Bx
t
Bleft_x
t
Bright_x
Adaptive Hysteresis
=
IHigh
ILow
Figure 3 Signal output pulse
4 Safety Mechanisms
The TLE5045iC oers safety features to support the Automotive Safety Integrity Level ASIL B and is designed to
be used in ASIL D systems.
An embedded safety concept was developed to notify the Control System in case of an internal error by setting
the output current level to a constant failure indication level IError.
Following safety mechanisms have been implemented:
Undervoltage detection: This safety mechanism detects voltage drops to values where the correct
functionality of the circuitry is no more ensured. The sensor remains in this state until the error condition is
solved and VDD is back into normal operating range.
Detection of discrepancy between number of active fuses and internally stored number of fuses: This safety
mechanism compares the active fuse bits against the internal stored quantity. The sensor remains in this
failure indication state IError until the device is powered o and on again and the error condition is not
present any longer.
The entirety of Infineon experience has been used to identify and prevent common cause of failure in the
application including EMC disturbances and mechanical tolerances. An advanced EMC concept, inclusive of
microbreak feature, without the need of external components, maximizes the availability of the sensor signal at
the electrical interface. Also, the speed algorithm is designed for fast start-up and optimization of duty cycle.
The extremely low jitter of the sensor contributes to high time accuracy of the speed signal.
TLE5045iC is accompanied by accurate safety analysis and complete documentation to enable the system
integrator to quickly evaluate the compatibility with the system/item and start the integration process. A
detailed description of how the sensor is to be used in an ISO26262 compliant system can be found in the Safety
Manual and Safety Analysis Summary Report, which are available on request.
5 ESD and EMC Characteristics
The TLE5045iC is characterized according to the IC level EMC requirements described in the “Generic IC EMC
Test Specification” Version 2.0 from 2014. EMC testreport is available on request.
TLE5045iC
Technical product description
3 Speed Protocol
Technical Product Description 7 Revision 1.0
2018-11-06
Additionally component level EMC characterizations are performed according to ISO 7637-2:2011, ISO
7637-3:2007 and ISO 16750-2:2010 regarding pulse immunity, and CISPR 25 (2009-01) Ed. 3.0 regarding
conducted emissions.
6 ESD HBM Model
Table 5
Parameter Symbol Min. Typ. Max. Unit Note / Test Condition
ESD Voltage VHBM - - ±12 kV Method AEC-Q100 Rev H (1.5 kΩ,
100 pF)
7 Product Qualification
Product qualification according to AEC-Q100 Grade 0 is performed.
8 Pin Configuration
Table 6
Pin No. Symbol Function
1 VDD Supply voltage
2 GND Ground
Figure 4 Pin configuration
TLE5045iC
Technical product description
6 ESD HBM Model
Technical Product Description 8 Revision 1.0
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9 Package Outline
Figure 5 Package Outline
TLE5045iC
Technical product description
9 Package Outline
Technical Product Description 9 Revision 1.0
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10 Terminology
Table 7
µs microsecond
µT micro-Tesla
A Ampere
AEC Automotive Electronics Council
AK Arbeitskreis
ASIC application specific integrated circuit
ASIL automotive safety integrity Level
C Celsius
CISP Comité international spécial des perturbations radioélectriques
EMC electromagnetic compatibility
ESD electrostatic discharge
GMR giant magneto resistance
GND ground
h hour
HBM human body model
Hz Hertz
IC integrated circuit
iGMR integrated giant magneto resistance
ISO International Organization for Standardization
iTPMS integrated tire pressure monitoring system
kilo-Ohm
kV kilo-Volt
mA milli-Ampere
min minute
mm millimeter
ms millisecond
mT milli-Tesla
Ω Ohm
pF picofarad
PWM pulse width modulation
V Volt
VDD supply voltage
TLE5045iC
Technical product description
10 Terminology
Technical Product Description 10 Revision 1.0
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Revision history
Document
version
Date of
release
Description of changes
1.0 2018-11-06 Initial version
TLE5045iC
Technical product description
Revision history
Technical Product Description 11 Revision 1.0
2018-11-06
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-11-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-srj1538755497187
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaenheitsgarantie”) .
With respect to any examples, hints or any typical values
stated herein and/or any information regarding the
application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of
any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained sta. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies oice.
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Technologies in a written document signed by
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