Silicon (1-1 Transistors D25E47 D33024.27 D29E4I1-71 | 033024I1-2711 aaaaeaanaannananoanananonuuuOuDuDuuDQuaaee ee The PNP D29E4-7 series and the NPN D33D24-27 series are silicon, planar, passivated, epitaxial trans- istor intended for general purpose applications. These complementary pairs are especially suited for the drive stage in high power amplifiers, and for control and television circuitry. FEATURES: Low Collector Saturation Voltage Excellent Beta Linearity Over A Wide Current Range Heatsinking Available On All Units vw, NOTE: Observe proper polarity on biases for PNPs and NPNs CS absolute maximum ratings: (25C) (uniess otherwise specified) Voltage Collector to Emitter Voro 40 Volts Emitter to Base Verso 5 Volts Collector to Base Vso 50 Volts Collector to Emitter Vous 50 Volts Current Collector (Continuous) Ie 750 mA Collector (Pulsed, 300 usec. pulse width, = 2% duty cycle) Icu 1000 mA bimensions wir Dissipation JEDEC OUTLINE TO-98 wg Wen Total Power (Free Air, teers a te 1 (Ga) + T, = 25C) * Pr 500 mW omar rw Total Power with J1 Heatsink Bea, (Free Air, T, S 25C) ** Pr 700 mW nee eee ToL eRAED Total Power with J1 Heatsink (Case Temp., Tc S 25C) *** Pr 1000 mW 3 uesgs Temperature wore Storage Tsra 65 to +150 C Operating Ts 65 to +150 C : Lead soldering (46 + % - OD soa from case for 10 sec. max.) Ti +260 C ere *Derate 4.0 mW/C increase in ambient temperature above 25C. **Derate 5.6 mW/C increase serowree ete woLmweee in ambient temperature above 25C. ***Derate 8.0 mW/C increase in case temperature above 25C, Win Jt MEATSINN electrical characteristics: (25C) (unless otherwise specified) NOTE: Characteristics apply to both heatsinked and non-heatsinked devices. STATIC CHARACTERISTICS Min. Max. Collector Cutoff Current (Vice = 25V) Tors _ 100 nA (Vow = 25V, Ts, = 100C) Tcrs _ 15 pA Forward Current Transfer Ratio (Ic =2 mA, Ver = 2v) D29E4/D33D24 hre 60 120 D29E5/D33D25 hre 100 200 D29E6/D33D26 hre 150 300 D29E7/D33D27 hre 200 500 (Ic = 500 mA, Vez = 2V) D29E4/D33D24 ** hog 20 _ D29E5/D33D25 ** hop 25 _ D29E6/D33D26 ** hep 25 D29E7/D33D27 ** hoe 25 _ Collector Emitter Breakdown Voltage (Ic = 10 mA) ** V ippyceo 40 Volts (Ic = 10 pA) Vspces 50 Volts Emitter Base Breakdown Voltage (Iz = 10 pA) Vosmeso 5 Volts Collector Saturation Voltage (Ic = 500 mA, Is = 50 mA) ** Vongan _ 0.75 Volts Base Saturation Voltage (Ic = 500 mA, In = 50 mA) ** Varcsan _ 1.2 Volts DYNAMIC CHARACTERISTICS Output Capacitance, Common Base (Ver = 10V, f= 1MHz) Cev _ 15 pF Input Capacitance, Common Base (Vex = 0.5V, f = 1 MHz) Cen _ 55 pF Gain Bandwidth Product (Ic = 50 mA, Vou = 2V, f = 20MHz) D29E4/D33D24 f, 80 MHz D29E5/D33D25 fr. 120 MHz D29E6/D33D26 fr 135 MHz D29E7/D33D27 fr 150 MHz **Pulse Conditions: Pulse width < 300pis Duty cycle S 2% 1076h_ FORWARD CURRENT TRANSFER RATIO AT V Fe beg FORWARD CURRENT TRANSFER RATIO AT ce *2V Yor (SAT) -COLLECTOR EMITTER SATURATION VOLTAGE -VOLTS D29E4-7 D33D24-27 D29E4J1-7J1 | D33D24J1-27J1 TYPICAL hrz VS. Ic 350 beoE4 033024 0296s = 033025 ee 300 2 8 8 w } g hee FORWARD CURRENT TRANSFER RATIO AT oe 2Vv OF 1.0 lo 100 1000 0.1 1 10 I, COLLECTOR CURRENT-mA I, "COLLECTOR CURRENT ~ mA FIGURE 1 FIGURE 2 o2se7T 033027 -~ o 3 S lesec om 3 w r -FORWARD CURRENT TRANSFER RATIO AT Nog 124 Mee Of Lo 10 100 1000 Ig COLLECTOR CURRENT-mA ol 1.0 19 I, COLLECTOR CURRENT ~mA FIGURE 3 FIGURE 4 TYPICAL Von (gat) VS. lo, Is = 1/20 3s nwo aa 5 =COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS 9 ceisar) Oo 2 "OF ot 1.0 10 00 1000 . Ol 10 0 too 4000 I, ~COLLECTOR CURRENT mA T,- COLL ECTOR CURRENT mA 2 2 FIGURE 5 FIGURE 6 1077D29E4-7 D33D24-27 D29E4J1-7J1 | D33D24J1-27J1 TYPICAL Vez (sat) VS. Ic, ly = Ic/20 (continued) io o2ves osc? 033026 033027 <== ol Voge (sat) -COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS Vee (sar) -COLLECTOR EMITTER SATURATION VOLTAGE- VOLTS 2 0.01 ot 1o lo 100 1000 0.01 ol Lo 10 100 tooo a -COLLECTOR CURRENT-mA T,~ COLLECTOR CURRENT ~maA FIGURE 7 FIGURE 8 TYPICAL Vox (sat) VS. lor Is = 1/10 10 ose - 033024 emn 02955 0330235 -= 0 10 10 0.01 oO. 10 10 100 100 I, -COLLECTOR CURRENT-mA Ip -COLLECTOR CURRENT-mA i ATION V4 = 7 Vor (SAT) COLLECTOR EMITTER SATURATIO! 'OLTAGE - VOLTS Vor (SAT) -COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS FIGURE 9 FIGURE 10 02956 033086 02957 = 033027 Voe (sat) COLLECTOR EMITTER SATURATION VOLTAGE ~ VOLTS Veg tsar COLLECTOR EMITTER SATURATION VOLTAGE-VOLTS 10 400 1000 9.01 Ol 10 10 wo 1000 Ig -COLLECTOR CURRENT -mA I, COLLECTOR CURRENT mA FIGURE 11 FIGURE 12 1078D29E4-7 D33D24-27 D29E4J1-7J1 | D33D24J1-27J1 TYPICAL V;; VS. I. 029E5 BASE EMITTER VOLTAGE - VOLTS Vee -BASE EMITTER VOLTAGE- VOLTS be 10 loo loo0, 0.01 00 1 Tg- COLLECTOR CURRENT mA i, =COLLECTOR CURRENT mA FIGURE 13 FIGURE 14 o29E7 o2966 === 033026 eee 2 033027 Vee -BASE EMITTER VOLTAGE -VOLTS -BASE EMITTER VOLTAGE-VOLTS v. Ol ' 1o 100 1000 Ty ~COLLECTOR CURRENT-mA T,- COLLECTOR CURRENT-mA FIGURE 15 FIGURE 16 1079