2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) -200 VCBO Electrical Characteristics Conditions Ratings Unit V ICBO VCB=-200V -100max A VEB=-6V -100max A IC=-50mA -200min V VCEO -200 V IEBO VEBO -6 V V(BR)CEO IC -15 A hFE VCE=-4V, IC=-5A 50min IB -5 A VCE(sat) IC=-10A, IB=-1A - 3.0max V VCE=-12V, IE=0.5A 20typ MHz VCB=-10V, f=1MHz 400typ pF PC 150(Tc=25C) W fT Tj 150 C COB -55 to +150 C hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg External Dimensions MT-200 (Ta=25C) Symbol 6.00.2 36.40.3 24.40.2 2.1 2-o3.20.1 9 7 Unit 21.40.3 Ratings a b 2 4.0max Symbol 20.0min Absolute maximum ratings (Ta=25C) Application : Audio and General Purpose 3 5.450.1 B VCC (V) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -60 12 -5 -10 5 -500 500 0.3typ 0.9typ 0.2typ 0 0 -1 -2 -3 -10A -5A 0 -4 0 Collector-Emi tter Voltage V C E (V) 200 DC C urrent G ain h FE 100 50 -30C 50 20 -0.02 -5 -10 -15 -0.1 -0.5 -1 -5 -10 -15 0.1 1 10 m C s 10 0m s 10ms s 2000 si nk -300 80 at -100 he -10 Collector-Emitter Voltage V C E (V) ite Without Heatsink Natural Cooling fin -1 120 In -5 -2 1000 P c - T a Derating -0.1 10 100 Time t(ms) ith Co lle ctor Cu rr ent I C ( A) D -10 -0.5 emp) 0.5 W 10 (CaseT 1 160 3m Typ 1 2 -50 20 20 -2 j-a - t Characteristics Safe Operating Area (Single Pulse) 30 Emitter Current I E (A) -1 Collector Current I C (A) (V C E =-12V) 0.1 0 Base-Emittor Voltage V B E (V) 25C 100 f T - I E Characteristics (Typical) 0 0.02 0 -4 125C Collector Current I C (A) Cut- off F re quen cy f T ( MH Z ) DC C urrent G ain h FE Typ -1 -3 (V C E =-4V) 300 -0.5 -2 h FE - I C Temperature Characteristics (Typical) (V C E =-4V) -0.1 -1 Base Current I B (A) h FE - I C Characteristics (Typical) 10 -0.02 -5 I C =-15A -30C -1 eTe mp) Temp ) I B =-5 0m A -5 -10 Cas -1 00 mA -2 (Case A C ( -200m -10 125 mA (V C E =-4V) 25C -400 -15 Collector Current I C (A) mA j- a (C /W ) - 0 60 I C - V BE Temperature Characteristics (Typical) -3 Transient Thermal Resistance A E Weight : Approx 18.4g a. Part No. b. Lot No. Maximu m Power Dissip ation P C (W) 5A -1. Collector Current I C (A) -1 C V CE ( sa t ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C - V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.450.1 Typical Switching Characteristics (Common Emitter) -15 0.65 +0.2 -0.1 1.05 +0.2 -0.1 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 21