21
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–200
–200
–6
–15
–5
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
–100max
–100max
–200min
50min∗
– 3.0max
20typ
400typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–200V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–5A
IC=–10A, IB=–1A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
2SA1493
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–1.5A
I
B
=–50mA
–100mA
–600mA
–1A
–400mA
–200mA
0
–3
–2
–1
0–1–2 –4–3
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–15A
–10A
–5A
–0.02 –0.1 –1 –10–0.5 –5 –15
10
100
50
300
Collector Current IC(A)
DC Current Gain hFE
Typ
–2 –10 –100 –300
–0.1
–1
–0.5
–10
–50
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
3ms
Without Heatsink
Natural Cooling
DC
100ms
20ms
10ms
0.02 0.1 1 10
0
10
20
30
Cut-off Frequency fT(MHZ)
(VCE=–12V)
(VCE=–4V)
Emitter Current IE(A)
Typ
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)
θj-a–t Characteristics
fT–IE Characteristics
(Typical)
160
120
80
40
5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
–15
–10
–5
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (CaseTemp)
25˚C (CaseTemp)
–30˚C (CaseTemp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –15
20
50
100
200
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
500
ton
(
µ
s)
0.3typ
tstg
(
µ
s)
0.9typ
tf
(
µ
s)
0.2typ
IB1
(mA)
–500
VBB1
(V)
–10
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45±0.1 5.45±0.1
2-ø3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Part No.
b. Lot No.
∗hFE Rank O(50to100), P(70to140), Y(90to180)
