SFH 9201
Reflexlichtschranke
Reflective Interrupter
Lead (Pb) Free Product - RoHS Compliant
2007-03-29 1
Wesentliche Merkmale
• Optimaler Arbeitsabstand 1 mm bis 5 mm
• IR-GaAs-Lumineszenzdiode in Kombination
mit einem Si-NPN-Fototransistor
• Tageslichtsperrfilter
• Geringe Sättigungsspannung
• Sender und Empfänger galvanisch getrennt
• Lötmethode: IR-Reflow Löten
• Vorbehandlung nach JEDEC Level 4
Anwendungen
• Positionsmelder
• Endabschaltung
• Drehzahlüberwachung, -regelung
• Bewegungssensor
Typ
Type Bestellnummer
Ordering Code ICE [mA]
IF = 10 mA, VCE = 5 V, d = 1 mm
SFH 9201 Q65110A2708 0.25 … 2.00
SFH 9201-2/3 Q65110A2698 0.40 … 1.25
SFH 9201-3/4 Q65110A2716 0.63 … 2.00
Features
• Optimal operating distance 1 mm to 5 mm
• IR-GaAs-emitter in combination with a Silicon
NPN phototransistor
• Daylight cut-off filter
• Low saturation voltage
• Emitter and detector electrically isolated
• Soldering Methode: IR Reflow Soldering
• Preconditioning acc. to JEDEC Level 4
Applications
• Position reporting
• End position switch
• Speed monitoring and regulating
• Motion transmitter
SFH 9201
2007-03-29 2
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Sender (GaAs-Diode)
Emitter (GaAs diode)
Sperrspannung
Reverse voltage VR5 V
Vorwärtsgleichstrom
Forward current IF50 mA
Verlustleistung
Power dissipation Ptot 80 mW
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Dauer-Kollektor-Emitter-Sperrspannung
Continuous collector-emitter voltage VCE 16 V
Kollektor-Emitter-Sperrspannung, (t ≤ 2 min)
Collector-emitter voltage, (t ≤ 2 min) VCE 30
Emitter-Kollektor-Sperrspannung
Emitter-collector voltage VEC 7
Kollektorstrom
Collector cu rr ent IC20 mA
Verlustleistung
Total power dissipation Ptot 100 mW
Reflexlichtschranke
Light Reflection Switch
Lagertemperatur
Storage temperature range Tstg – 40 … + 100 °C
Umgebungstemperatur
Ambient temperature range TA– 40 … + 100
Verlustleistung
Power dissipation Ptot 150 mW
Elektrostatische Entladung
Electrostatic discharge ESD 2KV
Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3)
SFH 9201
2007-03-29 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Sender (IR-GaAs-Diode)
Emitter (IR-GaAs diode)
Durchlaβspannung
Forward voltage
IF = 50 mA
VF1.25 (≤ 1.65) V
Sperrstrom
Reverse current
VR = 5 V
IR 0.01 (≤ 1) μA
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
CO25 pF
Wärmewiderstand1)
Thermal resistance1) RthJA 270 K/W
Empfänger (Si-Fototransistor)
Detector (silicon phototransistor)
Kapazität
Capacitance
VCE = 5 V, f = 1 MHz
CCE 10 pF
Kollektor-Emitter-Reststrom
Collector-emitter leakage current
VCE = 20 V
ICEO 3 (≤ 200) nA
Fotostrom (Fremdlichtempfindlichkeit)
Photocurrent (outside light density)
VCE = 5 V, EV = 1000 Lx
IP3.5 mA
Wärmewiderstand1)
Thermal resistance1) RthJA 270 K/W
SFH 9201
2007-03-29 4
Reflexlichtschranke
Light Reflection Switch
Kollektor-Emitterstrom
Collector-emitter current
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; VCE = 5 V; d = 1 mm
ICE min.
ICE typ.
0.25
0.70 mA
mA
Kollektor-Emitter-Sättigungsspannung
Collector-emitter-saturation volt age
Kodak neutral white test card, 90% Reflexion
IF = 10 mA; d = 1 mm; IC = 85 μA
VCE sat 0.15 (≤ 0.6) V
1) Montage auf PC-Board mit > 5 mm2 Padgröβe
1) Mounting on pcb with > 5 mm2 pad size
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
OHM02257
d
Reflector
with 90% reflexion
(Kodak neutral white
test card)
SFH 9201
2007-03-29 5
Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ)
Switching Times
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Einschaltzeit
Turn-on time tein
ton
65 μs
Anstiegzeit
Rise time tr50 μs
Ausschaltzeit
Turn-off time taus
toff
55 μs
Abfallzeit
Fall time tf50 μs
1) IC eingestellt über den Durchlaβstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom
Bauteil (d)
1) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between
reflector and component (d)
OHM02258
Ι
FVCC
RL
Ι
COutput
SFH 9201
2007-03-29 6
Collector Current
Max. Permissible Forward Current
IF = f (TA)
Forward Voltage (typ.) of the
Diode VF = f (T)
IC
ICmax
----------fd()=
0
OHO02255
Ι
C
d
0
max
C
Ι
20
40
60
80
%
100
1234mm5
Kodak neutral
white test card Mirror
OHL00986
0020406080˚C
100
mA
F
I
T
A
20
40
60
80
100
120
1
OHO02256
T
-40
F
V
-20 0 20 40 60 100
1.05
1.10
1.15
1.20
1.25
1.30
V
5 mA
10 mA
Ι
F= 20 mA
C
Permissible Power Dissipation for
Diode and Transistor Ptot = f (TA )
Transistor Capacitance (typ.)
CCE = f (VCE), TA = 25 °C, f = 1 MHz
Relative Spectral Emission of
Emitter (GaAs) Irel = f (λ) and
Detector (Si) Srel = f (λ)
OHL00945
0020406080˚C
100
mW
tot
P
T
A
Total power dissipation
20
40
60
80
100
120
160
Detector
Emitter
OHO00374
10
CCE
-2
pF
V
CE
50
-1
10 0
10 1
10 2
10V
40
35
30
25
20
15
10
5
0
0
OHO00786
Srel
λ
700
rel
Ι
20
40
60
80
%
100
800 900 1000 nm 1100
Detector
Emitter
Switching Characteristics t = f (RL)
TA = 25 °C, IF = 10 mA
Collector Current IC = f (IF), spacing
d to reflector = 1 mm, 90% reflection
Output Characteristics (typ.)
IC = f (VCE), spacing to reflector:
d = 1 mm, 90% reflection, TA = 25 °C
OHO00785
t
L
R
10
1
10
-1
10
2
10
3
s
10
0
10
1
k
Ω
μ
Ι
C
100
μ
A
t
on
=
= 1 mA
C
Ι
t
off
t
on
t
off
OHO00783
0
C
Ι
mA
0
mA
F
Ι
0.5
1.0
1.5
2.0
2.5
3.0
4 8 12 16 20
=5 V
CE
V
V
OHO00781
CE
0.1
0
Ι
C
Ι
F
= 25 mA
= 20 mA
Ι
F
= 15 mA
Ι
F
= 10 mA
Ι
F
= 5 mA
Ι
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
mA
2.0
10 V
0
10
1
SFH 9201
2007-03-29 7
Perm. Pulse Handling Capabi lity
IF = f (tp), Duty cycle D = parameter,
TA = 25 °C
1010 -2-3-4-5 1010 10
F
I
P
t
=
DT
210-1 10
t
p
10 s10
OHF02623
T
t
P
I
F
1
10
102
103
104
mA
0.005
0.05
0.1
0.02
0.01
D
=
0.2
0.5
1
Perm. Pulse Handling Capabi lity
IF = f (tp), Duty cycle D = parameter,
TA = 85 °C
1010
-2-3-4-5
1010 10
F
I
P
t
=
DT
210-1
10
t
p
10 s10
OHF02622
T
t
P
I
F
1
10
10
2
10
3
10
4
mA
1
0.5
0.2
0.005
0.05
0.1
0.01
0.02
D
=
SFH 9201
2007-03-29 8
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
3.4 (0.134)
3.0 (0.118)
5.8 (0.228)
6.2 (0.244)
0.15 (0.006)
0.13 (0.005)
0...0.1 (0...0.004)
2.1 (0.083)
1.7 (0.067)
4
6
1
3
GPLY0504
4.2 (0.165)
3.8 (0.150)
25
0.3 (0.012)
0.5 (0.020)
Raster (spacing)
Raster (spacing)
(0.1 (0.004) typ.)
B
A
0.2 MA
Sender/Emitter
0.1 MB
2.54 (0.100)
1.27 (0.050)
(5˚)
(0.05 (0.002) typ.)
(1.2 (0.047) typ.)
(0.4 (0.016) typ.)
Empfänger/Receiver
Chip Positionen
Type 1 2 3 4 5 6
SFH 9201 Anode – Emitter Collector – Cathode
SFH 9201
2007-03-29 9
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad REflow Soldering
Maße in mm (inch) / Dimensions in mm (inch).
Solder resist
Lötstopplack
Cu-area >5 mm
Cu-Fläche >5 mm
2
OHPY0030
3.9 (0.154)
1.2 (0.047)
1.27 (0.050)
0.6 (0.024)
1.27 (0.050)
2
Paddesign
Wärmeableitung
for improved
für verbesserte
Padgeometrie
Heat dissipation
SFH 9201
2007-03-29 10
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD- 020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
I
Löthinweise
Soldering Conditions
Bauform
Type Drypack
Level acc.
to
IPS-stand.
020
Tauch-, Schwalllötung
Dip, Wave Soldering Reflowlötung
Reflow Soldering Kolbenlötung
Iron Soldering
Peak Temp.
(solderbath) Max. Time in
Peak Zone Peak Temp.
(package
temp.)
Max. Time
in Peak
Zone
(Iron temp.)
SFH 9201 4n. a. –260 °C20 sec. n.a.
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
SFH 9201
2007-03-29 11
Gurtung / Polarität und Lage siehe Dokument: Short Form Katalog: Gurtung und
Verpackung - SMT-Bauelemente - Gehäuse:SMT RLS
Methode of Taping / Polarity and Orientation see document: Short Form Catalog: Tape and Reel -
SMT-Components - Package: SMT-RLS
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reas onable to assume that the health of the user may be endangered.
