GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
1
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Features
Robust GaN Protection at Any Power Up/Power
Down Sequence
Fixed Gate Bias Voltage with Pulsed Drain Bias
Voltage. Add-On Module Allows for Gate Pulsing
Open Drain Output Current of 200 mA for
External MOSFET Switch Drive
Internal Thermistor or External Temperature
Sensor Voltage for Gate Bias Sum
30 dB Typical EMI/RFI Rejection at All I/O Ports
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT
Leads
Target ≤ 500 ns Total Switch Transition Time
Gate Bias Output Current 50 mA for Heavy RF
Compression
RoHS* Compliant and 260°C Reflow Compatible
Description
The MABC-001000-DP000L is a bias controller that
provides proper gate voltage and pulsed drain
voltage biasing for a device under test (DUT).
Applicable DUT’s would be depletion-mode GaN
(Gallium Nitride) or GaAs (Gallium Arsenide) power
amplifiers or HEMT devices.
The module also provides bias sequencing so that
pulsed drain voltage cannot be applied to a DUT
unless the negative gate bias voltage is present.
The applications section of this datasheet will show
how the module can be implemented for the
following two applications:
Application Option 1: Fixed negative gate
biasing with pulsed drain biasing.
Application Option 2: Pulsed negative gate
biasing with pulsed drain biasing.
Both of these applications will recommend the
external circuitry and p-Channel Power MOSFET.
The MABC-001000-DP000L module can also be
installed onto an MABC-001000-PB1PPR evaluation
board for evaluation, test, and characterization
purposes.
Ordering Information2
Part Number Packaging
MABC-001000-DP000L Tray
MABC-001000-DP00TL Tape & Reel
MABC-001000-PB1PPR Gate and Drain Pulsing
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
Pin No.
Label
Function
1 GFB Gate Voltage (-) Feedback
2 NC No Connect
3 GCO Gate Voltage (-) Control Output
4 GCI Gate Voltage (-) Control Input
5 VGS Gate (-) Supply Voltage
6 NC No Connect
7 GND Ground
8 VDS Drain (+) Supply Voltage
9 SWG Driver Output to MOS Switch Gate
10 NC No Connect
11 P4V Auxiliary +4.3 VDC Output
12 ENS MOS Switch Enable TTL
13 GND Ground
14 GND Ground
Pin Configuration1
2. Reference Application Note M513 for reel size information.
1. Unused package pins must be left open and not connected to
ground.
Functional Schematic
1
2
3
4
5
12
11
10
9
8
76
1314
+
-
+
-
V_REG
GFB
NC
GCO
GCI
VGS
ENS
P4V
NC
SWG
VDS
NC GND
GND GND
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
2
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Electrical Characteristics: TA = 25°C
Symbol Parameter Conditions Min Typ Max Unit
VDS Supply Voltage, Positive 10 50 70 V
IDS Supply Current, Positive - 14 - mA
VGS Supply Voltage, Negative -8 -6 0 V
IGS Supply Current, Negative - -3 - mA
VENL ENS Input Voltage, Low 0 0 0.3 V
VENH ENS Input Voltage, High 2 3.3 4.3 V
IENS ENS Input Current - 40 - uA
VGTH Input, Gate Feedback Threshold to VGS - 2.7 - V
VDTH Input, Drain Feedback Threshold - 65% VDS - V
VGC Output Voltage, Pulsed/Fixed Gate -8 -3.5 0 V
VGCR Output Voltage, Pulsed/Fixed Gate Ripple
(Peak-to-peak) - 50 - mV
IGC Output Gate Current, Peak - 50 - mA
ROFF Output Drive, Open Drain, OFF State
VDS = 50 V
Temp. = +85°C
- 4M -
RON Output Drive, Open Drain, ON State - 1.2 -
ION Output Drive, Current, ON State - 100 200 mA
Absolute Maximum Ratings
Parameter Min. Max.
Supply (+) Voltage, VDS 0 V +60 V
Supply (-) Voltage, VGS -10 V 0 V
Logic Voltage, ENS, GSE -0.3 V +4.5
Analog (-) Voltage, GCI, GFB -10 V 0 V
Switch Driver Voltage, SWG 0 V +75 V
Switch Driver Sink Current, SWG - -200 mA
Lead Soldering Temp (10 s) - +260°C
Operating Temperature -40°C +85°C
Storage Temperature -65°C +150°C
Recommended Operating Conditions
Parameter Typical
Supply (+) Voltage, VDS +12 V to +55 V
Supply (-) Voltage, VGS -8 V to -2 V
Logic Voltage, ENS 0 V to +4.3 V
Analog (-) Voltage, GCI, GFB -8 V to -2 V
Switch Driver Sink Current, SWG -1 mA to -200 mA
Operating Temperature -40°C to +85°C
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
3
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Timing Diagrams
TTL
VDS
VGS
RF
+5V
+50V
-3V
-8V
0
0
90%
PULSE ENABLE FOR
tD1 D2
D3
D4
RISE1 FALL1
t
t
t
tt
FALL2
t
10%
90%
10%
RISE2
t
10%
90%
90%
10%
0
+50V
VOD
GATE & DRAIN SWITCH
OPEN DRAIN OUTPUT
MOSFET SWITCH OUTPUT
PULSED GATE OUTPUT
RF OUTPUT
Symbol Parameter Conditions Min Typ Max Unit
tD1 Open Drain ON Propagation Delay3
RPULL-UP = 700 Ω
VDS = 50 V
IR = 71 mA avg.
Switch Disconnected
- 100 - ns
tD3 Open Drain OFF Propagation Delay3 - 70 - ns
tRISE1 Open Drain Rise Time4 - 115 - ns
tFALL1 Open Drain Fall Time4 - 60 - ns
tD1 MOS Switch ON Propagation Delay3,5 - 300 - ns
VDS = 50 V
MOS CISS = 2780 pF
RDS,ON = 60 mΩ
tD3 MOS Switch OFF Propagation Delay3,5 - 1.8 - µs
tRISE1 MOS Switch Rise Time4,5 - 400 - ns
tFALL1 MOS Switch Fall Time4,5 - 80 - µs
tD2 Gate Bias ON Propagation Delay3,5 - 100 - ns
tD4 Gate Bias OFF Propagation Delay3,5 - 200 - ns
tRISE2 Gate Bias Rise Time4,5 - 500 - ns
tFALL2 Gate Bias Fall Time4,5 - 400 - ns
3. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest.
4. Rise and fall times are measured between 10% and 90% of the steady state signal.
5. Parameter was measured with MABC-001000-PB1PPR sample board. MAGX-L21214-650L00 was used as the DUT.
Timing Characteristics: TA = 25°C
ENS
SWG
VDD (Q1)6
GCO
RF
6. Q1 refers to an external p-Channel HEXFET that pulses the drain of the DUT. See Applications Section for more information.
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
4
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For further information and support please visit:
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Applications Section
Functional Description
The MABC-001000-DP000L GaN Bias Controller/
Sequencer Module circuitry provides proper
sequencing and generation of the gate voltage and
pulsed drain voltage for a device under test (DUT).
Reference the Product View and Pin Configuration
table on page 1. The basic functions of the circuits
within the module are described as follows:
Overhead Voltages for the Circuits within the
MABC-001000-DP000L Module
Pin 8 (VDS) is the Drain (+) Supply Voltage
that provides the input voltage to a low drop-
out linear regulator (VREG). This supplies
the positive voltage for the circuits within the
module. It also provides the Auxiliary
+4.3 V Output to Pin 11 (P4V).
Pin 5 (VGS) is the Gate (-) Supply Voltage
that is also used to supply the negative
voltage for the circuits within the module.
Negative Gate Voltage for the Device Under
Test (DUT)
A voltage follower op-amp circuit provides a
low impedance output to Pin 3 (GCO) Gate
Voltage (-) Control Output. Pin 3 (GCO)
output is applied to the gate terminal of a
DUT as shown in Figure 1 on page 5.
The reference voltage for the voltage
follower is provided by the Pin 4 (GCI) Gate
Voltage (-) Analog Input. This input
reference voltage is developed by an
external potentiometer/ resistive divider
circuit as shown in Figure 1 on page 6. It is
recommended to use the -8 V to -3 V
voltage that is also applied to Pin 5 (VGS).
Reference: The external potentiometer is
adjusted to set the gate voltage Pin 3 (GCO)
to the DUT. Alternative voltage inputs such
as a temperature compensation circuit or a
Digital-to-Analog (DAC) converter could also
be supplied to Pin 4 (GCI).
Pin 9 (SWG) MOS Switch Driver Output
An N-Channel MOSFET develops the
pulsed signal (SWG) to drive the
resistive divider network for the gate of an
external p-Channel HEXFET as shown in
Figure 1 on page 5. The input signal for the
internal MOSFET is provided by the output
from the sequencing circuits.
Sequencing Circuits
A voltage comparator circuit senses if the
negative gate voltage is present as an input
on Pin 1 (GFB) - Gate Voltage (-) Feedback.
A logic circuit provides the switched input
enable signal for the N-Channel MOSFET.
The following 3 signals must be at correct
levels to generate the enable logic
signal:
Pin 12 (ENS) MOS Switch Enable TTL
Negative gate voltage (GFB) is present
The internal positive voltage output is
present from V_REG
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
5
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For further information and support please visit:
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Applications Section
Part
Value MFG
MFG P/N
R1 2.7 kΩ Panasonic ERJ-2GEJ272X
R2,R3 1.02 kΩ Vishay CRCW25121K02FKEGHP
R4,R5 402 Ω Vishay CRCW2512402RFKEG
VR1 10 kΩ Bourns 3224W-1-103E
Q1 P-Channel
MOSFET IR IRF5210SPBF
Application Option 1:
Fixed Negative Gate Biasing with Pulsed
Drain Biasing
Figure 1 shows a block diagram of the
MABC-001000-DP000L module with the
recommended external components to support this
application option. See Table 1 for component
recommendations and values.
Figure 1. Fixed Gate/Pulsed Drain Biasing
Module Layout Guidelines
Reference the Product View, Pin Configuration
Table on page 1, and the Recommended Landing
Pattern on page 7.
The following recommendations should be followed
when the MABC-001000-DP000L module is used to
bias a high-power RF device or amplifier. The input
and output locations were determined so that the
layout and signal routing could be optimized when
interfacing with a high-power amplifier
assembly.
The negative gate voltage input and outputs are
located on the left side of the module and should
be located as close as possible to the gate bias
pad s on the high-power amplif ier
assembly.
The positive pulsed voltages are located on the
right side of the module and should be located
as close as possible to the external MOSFET
switch. The MOSFET switch drain should be
located as close as possible to the drain bias
pads on the high-power amplifier assembly. The
charge storage capacitors should be
located as close as possible to the MOSFET
switch source terminal pads.
The module ground pads are located at Pins 7,
13, and 14.
Route all signal lines and ground returns to be
as short as possible and implement a ground
plane on the back of the printed wiring board
(PWB) if that option is available to the
designer. Following these layout criteria will
minimize circuit parasitics that degrade the
performance of the pulsed signal.
Table 1. Recommended Parts List for Fixed
Gate/Pulsed Drain Biasing
RFIN RFOUT
MABC-001000-
DP000L
DUT
+50 V
-8 V
TTL
39
8
5
4
6
1
R1
R2
R4
R3
R5
CSTORAGE
Q1
VR1
COUT
CIN
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
6
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For further information and support please visit:
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Applications Section
Figure 2. Pulsed Gate/Pulsed Drain Biasing:
(a) North Biasing; (b) South Biasing
Figure 3. Populated MABC-001000-PB1PPR
Evaluation Board
Figure 4. MABC-001000-PB1PPR with
MABC-001000-DP000L Mounted
(a) (b)
Application Option 2:
Pulsed Negative Gate Biasing with
Pulsed Drain Biasing
A block diagram showing a typical application of
the MABC-001000-PB1PPR sample board is
shown in Figure 2 below. Figures 3 and 4 show
layouts of the MABC-001000-PB1PPR sample
board with/without the MABC-001000-DP000L
module installed.
The additional external circuitry on the
MABC-001000-PB1PPR sample board provides
the added capability of pulsed gate biasing. A full
schematic, layout, and bill of materials are
available upon request.
RFIN RFOUT
MABC-001000-
PB1PPR
DUT
+50 V -8 V
TTL
VD_PULSED
VG_B
VDD TTL -8V RFIN RFOUT
MABC-001000-
PB1PPR
DUT
+50 V-8 V TTL
VD_PULSEDVG_A
VDDTTL
-8V
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
7
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For further information and support please visit:
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Physical Dimensions6,7,8
Recommended Landing Pattern6 Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
This module is sensitive to electrostatic discharge
(ESD) and can be damaged by static electricity.
Proper ESD control techniques should be used
when handling these HBM class 1B devices.
7. All dimensions are in inches.
8. Reference Application Note M538 for lead-free solder reflow
recommendations.
9. Plating is 100% Sn over BeCu.
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V2
MABC-001000-DP000L
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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