BD438 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . for amplifier and switching applications. Complementary types are BD437 and

BD441.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage BD438

BD440

BD442

ÎÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage BD438

BD440

BD442

ÎÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

4.0

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

1.0

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

288

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–55 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

3.5

ÎÎÎÎ

C/W



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD438/D

 Motorola, Inc. 1995







4.0 AMPERES

POWER TRANSISTORS

PNP SILICON

CASE 77–08

TO–225AA TYPE

REV 7

  

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage

(IC = 100 mA, IB = 0) BD438

BD440

BD442

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

(IC = 100 µA, IB = 0) BD438

BD440

BD442

ÎÎÎÎ

V(BR)CBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IE = 100 µA, IC = 0)

ÎÎÎÎ

V(BR)EBO

ÎÎÎÎ

5.0

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 45 V, IE = 0) BD438

(VCB = 60 V, IE = 0) BD440

(VCB = 80 V, IE = 0) BD442

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5.0 V)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 mA, VCE = 5.0 V) BD438

BD440

BD442

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 500 mA, VCE = 1.0 V) BD438

BD440

BD442

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

375

475

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 2.0 A, VCE = 1.0 V) BD438

BD440

BD442

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Saturation Voltage

(IC = 3.0 A, IB = 0.3 A) BD438

BD440

BD442

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.7

0.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage BD438

(IC = 2.0 A, VCE = 1.0 V) BD440/442

ÎÎÎÎ

VBE(ON)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.1

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

MHz

  

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Collector Saturation Region

IB, BASE CURRENT (mA)

2.0

0.05

1.6

1.2

0.8

0.4

1.0 2.0 10 70 500

IC = 10 mA 100 mA 1.0 A

0.1 100205.0

TJ = 25

3.0 300.07 300200507.00.2 0.3 0.5 0.7

3.0 A

Figure 2. Current Gain

200

010

12 53 100 IC, COLLECTOR CURRENT (AMP)

hFE, CURRENT GAIN (NORMALIZED)

100

2.0

0.005

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

Figure 3. “On” Voltage

0.02 0.03 0.05 0.1 0.2

VBE @ VCE = 2.0 V

0.01 0.3 0.5 1.0 2.0 3.0 4.0

Figure 4. Active Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

4.0

1.0

0.1 2.0 10 20 100

0.5

IC, COLLECTOR CURRENT (AMP)

TJ = 150

Cdc

5 ms

1.0 5.0 50

SECONDARY BREAKDOWN

THERMAL LIMIT TC = 25

BONDING WIRE LIMIT

CURVES APPLY BELOW RATED VCEO

BD438

BD440

BD442

  

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

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BD438/D

*BD438/D*

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