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N-Channel SuperFET(R) II Easy-Drive MOSFET 600 V, 52 A, 70 m Features Description * 650 V @ TJ = 150C SuperFET(R) II MOSFET is Fairchild Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. * Typ. RDS(on) = 58 m * Ultra Low Gate Charge (Typ. Qg = 128 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 457 pF) * 100% Avalanche Tested * RoHS Compliant Applications * Telecom / Sever Power Supplies * Industrial Power Supplies D G G D S TO-247 S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Parameter FCH070N60E 600 - DC 20 - AC (f > 1 Hz) - Continuous (TC = 25oC) 52 - Continuous (TC = 100oC) - Pulsed 33 A 156 A (Note 2) 1128 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt V (Note 1) (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL 30 Unit V - Derate Above 25oC 20 V/ns 481 W 3.85 W/oC -55 to +150 oC 300 oC FCH070N60E Unit Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. RJA Thermal Resistance, Junction to Ambient, Max. (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 0.26 40 1 oC/W www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET April 2015 FCH070N60E Part Number FCH070N60E Top Mark FCH070N60E Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150C 650 - - V - 0.7 - V/oC Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, Referenced to 25oC VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V,TC = 125oC - 3.4 - VGS = 20 V, VDS = 0 V - - 100 2.5 - 3.5 V - 58 70 m - 44 - S A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 26 A VDS = 20 V, ID = 26 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance VDS = 380 V, VGS = 0 V, f = 1 MHz - 3705 4925 pF - 116 155 pF pF - 12.3 20 VDS = 0 V to 480 V, VGS = 0 V - 457 - pF VDS = 380 V, ID = 26 A, VGS = 10 V - 128 166 nC - 18 - nC - 54 - nC - 0.6 - - 29 68 ns - 28 66 ns - 122 254 ns - 28 66 ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 26 A, VGS = 10 V, Rg = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 52 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 156 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.2 V trr Reverse Recovery Time - 463 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 26 A, dIF/dt = 100 A/s - 10.4 - C Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 9.5 A, RG = 25 , Starting TJ = 25C 3. ISD 26 A, di/dt 200 A/s, VDD 380 V, Starting TJ = 25C 4. Essentially independent of operating temperature. (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 2 www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 200 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V *Notes: 1. VDS = 20V 2. 250s Pulse Test 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 1 0.1 1 1 VDS, Drain-Source Voltage[V] 10 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 200 100 o *Note: TC = 25 C 0.12 0.10 VGS = 10V 0.08 0.06 0.04 VGS = 20V 0 25 50 75 100 125 150 ID, Drain Current [A] 175 2. 250s Pulse Test 10 o o 0.01 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss Coss 100 1 25 C 0.1 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.3 0.1 1 10 100 VDS, Drain-Source Voltage [V] (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 1000 10 150 C 1 100000 *Note: 1. VGS = 0V 2. f = 1MHz 7 *Notes: 1. VGS = 0V 0.001 0.0 200 Figure 5. Capacitance Characteristics 10000 3 4 5 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 0.14 2 3 VDS = 120V 8 VDS = 300V 6 VDS = 480V 4 2 0 600 *Note: ID = 26A 0 35 70 105 Qg, Total Gate Charge [nC] 140 www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 2.5 1.2 *Notes: 1. VGS = 0V 2. ID = 10mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. On-Resistance Variation vs. Temperature 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 60 1000 10s 48 100 ID, Drain Current [A] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 26A 100s 10 1ms Operation in This Area is Limited by R DS(on) DC *Notes: 1 10ms o 1. TC = 25 C 36 24 12 o 2. TJ = 150 C 3. Single Pulse 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 30 EOSS, [J] 24 18 12 6 0 0 120 240 360 480 VDS, Drain to Source Voltage [V] (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 600 4 www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Typical Performance Characteristics (Continued) FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZJC(t), Thermal Response [ C/W] 0.5 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 o 1. ZJC(t) = 0.26 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.001 -5 10 (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 t2 *Notes: -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Figure 13. Gate Charge Test Circuit & Waveform IG = const. Figure 14. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms VGS (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 6 www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 7 www.fairchildsemi.com FCH070N60E -- N-Channel SuperFET(R) II Easy-Drive MOSFET Mechanical Dimensions Figure 16. TO-247, Molded, 3-Lead, Jedec AB Long Leads Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: https://www.fairchildsemi.com/design/package-specifications/packageDetails.html?id=PN_TO247-003 (c)2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 8 www.fairchildsemi.com AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM ? ? 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