PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D S 3 6 D 4 5 D A G VDSS = -20V RDS(on) = 0.09 Schottky Vf = 0.52V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current A Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range Maximum -4.3 -3.4 -33 2.0 1.3 16 12 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient A Maximum Units 62.5 C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -2.2A, di/dt -50A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com 1 10/18/04 IRF7422D2 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS Parameter Drain-to-Source Breakdown Voltage RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- -0.70 4.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.07 0.115 --- --- --- --- --- --- 15 2.2 6.0 8.4 26 51 33 610 310 170 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.09 VGS = -4.5V, ID = -2.2A 0.14 VGS = -2.7V, ID = -1.8A --- V VDS = VGS, ID = -250A --- S VDS = -16V, ID = -2.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 22 ID = -2.2A 3.3 nC VDS = -16V 9.0 VGS = -4.5V, See Fig. 6 and 9 --- VDD = -10V --- ID = -2.2A ns --- RG = 6.0 --- RD = 4.5, See Fig. 10 --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, See Fig. 5 MOSFET Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse RecoveryCharge Min. Typ. Max. Units Conditions --- --- -2.5 A --- --- -17 --- --- -1.0 V TJ = 25C, IS = -1.8A, VGS = 0V --- 56 84 ns TJ = 25C, IF = -2.2A --- 71 110 nC di/dt = -100A/s Schottky Diode Maximum Ratings If (av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units 2.8 A 1.8 200 20 A Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25C 50% Duty Cycle. Rectangular Wave, Tc = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Vfm Parameter Max. Forward voltage drop Irm Max. Reverse Leakage current Ct dv/dt Max. Junction Capacitance Max. Voltage Rate of Charge Max. Units 0.57 0.77 V 0.52 0.79 0.13 mA 18 310 pF 4900 V/s Conditions If = 3.0, Tj = 25C If = 6.0, Tj = 25C If = 3.0, Tj = 125C If = 6.0, Tj = 125C . Vr = 20V Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C Rated Vr ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7422D2 Power Mosfet Characteristics 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 1 -1.5V 20s PULSE WIDTH TJ = 25C A 0.1 0.01 0.1 1 10 1 -1.5V 20s PULSE WIDTH TJ = 150C 0.1 0.01 100 0.1 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 TJ = 25C R DS(on) , Drain-to-Source On Resistance (Normalized) 100 -ID , Drain-to-Source Current (A) 10 TJ = 150C 10 1 VDS = -15V 20s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5.0 A A 100 I D = -3.6A 1.5 1.0 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7422D2 Power Mosfet Characteristics 1500 10 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz Ciss = Cgs + C gd , Cds SHORTED Crss = C gd Coss = Cds + C gd C, Capacitance (pF) Ciss 1000 C oss Crss 500 0 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 A 1 I D = -2.2A VDS = -16V 100 0 5 -VDS , Drain-to-Source Voltage (V) 10 15 20 A 25 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 10 -IID , Drain Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 A 1.5 100us 10 1ms TC = 25 C TJ = 150 C Single Pulse 1 1 10ms 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7422D2 Power Mosfet Characteristics Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) 0.4 RDS (on) , Drain-to-Source On Resistance () RDS (on) , Drain-to-Source On Resistance () Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.3 0.2 VGS = -2.5V 0.1 V GS = -5.0V 0.0 0 2 4 6 I D , Drain Current (A) Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com 8 A 0.14 0.12 0.10 I D = -4.3A 0.08 0.06 0.04 2 3 4 5 6 7 V GS , Gate-to-Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage 5 A IRF7422D2 Schottky Diode Characteristics 100 TJ = 150C 100 Reverse Current - IR (mA) 10 125C 100C 1 75C 0.1 50C 0.01 25C A 0.001 TJ = 150C 0 4 8 12 16 20 Reverse Voltage - V R (V) TJ = 125C TJ = 25C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1 1000 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V FM (V) Fig. 12 - Typical Forward Voltage Drop Characteristics Junction Capacitance - C T (pF) Instantaneous Forward Current - IF (A) 10 TJ = 25C A 100 0 5 10 15 20 Reverse Voltage - V R (V) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com IRF7422D2 SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 0.25 [.010] 1 2 3 A 4 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 .0098 0.10 0.25 .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC C .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] 1.27 BAS IC K x 45 A 8X b MAX b e1 6X MILLIMET ERS MIN A E INCHES DIM B A1 8X L 8X c 7 C A B FOOTPRINT NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENS ION: MILLIMETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGT H OF LEAD FOR S OLDERING TO A S UBS TRAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) INT ERNAT IONAL RECT IFIER LOGO www.irf.com XXXX 807D1 DAT E CODE (YWW) P = DISGNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER 7 IRF7422D2 SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/04 8 www.irf.com