IRF7422D2
10/18/04
Description
SO-8
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
8
1
2
3
45
6
7
D
D
D
DG
S
A
A
A
Top View
A
VDSS = -20V
RDS(on) = 0.09Ω
Schottky Vf = 0.52V
FETKY MOSFET & Schottky Diode
TM
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
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Parameter Maximum Units
RθJA Junction-to-Ambient Ã62.5 °C/W
Thermal Resistance Ratings
Parameter Maximum Units
ID @ TA = 25°C -4.3
ID @ TA = 70°C -3.4
IDM Pulsed Drain Current À-33
PD @TA = 25°C 2.0
PD @TA = 70°C 1.3
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt Á-5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
lCo-packaged HEXFET® Power
MOSFET and Schottky Diode
lIdeal For Buck Regulator Applications
lP-Channel HEXFET
l Low VF Schottky Rectifier
lGeneration 5 Technology
lSO-8 Footprint
Continuous Drain Current, VGS @ -4.5V
Power Dissipation
A
W
PD- 91412M
IRF7422D2
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
––– 0.07 0.09 VGS = -4.5V, ID = -2.2A
––– 0.115 0.14 VGS = -2.7V, ID = -1.8A
VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 4.0 ––– ––– S VDS = -16V, ID = -2.2A
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 10 0 VGS = 12V
QgTotal Gate Charge –– – 15 22 ID = -2.2A
Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.0 9.0 VGS = -4.5V, See Fig. 6 and 9
td(on) Turn-On Delay Time ––– 8.4 ––– VDD = -10V
trRise Time ––– 26 ––– ID = -2.2A
td(off) Turn-Off Delay Time ––– 51 – –– RG = 6.0Ω
tfFall Time ––– 33 ––– RD = 4.5Ω, See Fig. 10
Ciss Input Capacitance ––– 610 ––– VGS = 0V
Coss Output Capacitance ––– 310 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 170 –– – ƒ = 1.0MHz, See Fig. 5
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IDSS Drain-to-Source Leakage Current
IGSS
Ω
µA
nA
ns
RDS(on) Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current(Body D iode) ––– ––– -2.5
ISM Pulsed Source Current (Body Di ode) ––– ––– -17
VSD Body Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
trr Reverse Recovery Time (Body Diode) ––– 56 84 ns TJ = 25°C, IF = -2.2A
Qrr Reverse RecoveryCharge ––– 71 110 nC di/dt = -100A/µs
A
MOSFET Source-Drain Ratings and Characteristics
Parameter Max. Units Conditions
If (av) Max. Average Forward Current 2.8 50% Duty Cycle. Rectangular Wave, Tc = 25°C
1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C
ISM Max. peak one cycle Non-repetitive 20 0 5µs sine or 3µs Rect. pulse Following any rated
Surge current 20 10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Maximum Ratings
A
Parameter Max. Units Conditions
Vf m Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C
0.77 I f = 6.0, Tj = 25°C
0.52 If = 3.0, Tj = 125°C
0.79 I f = 6.0, Tj = 125°C .
Irm Max. Reverse Leakage current 0.13 Vr = 20V Tj = 25°C
18 Tj = 125°C
Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr
Schottky Diode Electrical Specifications
V
mA
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
IRF7422D2
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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Power Mosfet Characteristics
0.1
1
10
100
0.01 0.1 1 10 10
0
D
DS
20µs PULSE WIDTH
T = 25° C
A
-I , D rain-t o-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
20µs PU LSE WIDTH
T = 150°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C T = 150°C
JJ
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -15V
20µs PULSE WI DTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Res istance
DS(on)
(Normalized)
A
I = -3.6A
D
V = -4.5V
GS
IRF7422D2
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Power Mosfet Characteristics
0
500
1000
1500
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Sou rce Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
G
GS
A
FOR TEST CIRCUIT
SEE FIGURE 12
-V , Gate-to-Source Voltage (V)
Q , Total Gate Cha rge (nC)
I = -2.2A
V = -16V
D
DS
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
T = 2 5° C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Sou rce Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7422D2
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Power Mosfet Characteristics
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0
.0
0
.1
0
.2
0
.3
0
.4
02468
A
I , Drain Current (A)
D
V = -5.0V
GS
V = -2.5V
GS
0
.04
0
.06
0
.08
0
.10
0
.12
0
.14
234567
A
GS
V , Gate-to-Source Voltage (V)
I = -4.3A
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Du ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rect angular Pulse Dura tion ( sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
IRF7422D2
6www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
Fig.14 - Typical Junction
Capacitance Vs. Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
0
.001
0.01
0.1
1
10
100
0 4 8 12 16 20
R
100°C
75°C
50°C
25°C
R ever s e Vol tage - V (V)
125°C
A
T = 150° C
J
100
1000
0 5 10 15 20
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
A
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1
.0
FM
F
Instantaneo us Forwar d Current - I (A)
Forward Voltage Dr op - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
IRF7422D2
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e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOTES:
1. DIMENSIONING & TOLERA NCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DO ES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DO ES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1. 78 [.0 7
0]
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
RECTIFIER
LOGO
INTERNATIONAL
EXAMPLE: THIS IS AN IRF7 807D1 ( FETKY)
XXXX
807D1
Y = LAST DIGIT OF THE YEAR
A = ASSEMB L Y SITE CODE
WW = WEEK
LOT CODE
PRODUCT (OPTION AL)
P = DISGNATES LE AD - FREE
DATE CODE ( YWW)
PART NUMBER
SO-8 (Fetky) Part Marking Information
IRF7422D2
8www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIME NSION : MI LLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINA L NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .3 18 )
7.9 ( .3 12 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
