REVISIONS LTR DESCRIPTION DATE (vn-mo-pa) | APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET 14124) 31415 16 i7 Es fo fofiihe tisha 5 | 16 PMIC WA DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY MICROCIRCUITS, MEMORY, DIGITAL, CMOS, DRAWING 2k X 8 STATIC RAM (SRAM), MONOLITHIC THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS SIZE CAGE CODE AND AGENCIES OF THE 16_OCTOBER 1989 A 67268 5962-89690 B REVISION LEVEL AMSC NIA SHEET 1 DESC FORM 193 SEP 87 DISTRIBUTION STATEMENT A. Approved for public release; distribution is untimited. * U.S. GOVERNMENT PRINTING OFFICE: 1987 748-129/60911 5962-E14001. SCOPE 1.1 Scope. This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices. 1.2 Part number. The complete part number shall be as shown in the following example: 5962-89690 ol J xX TS T T T { | | | | Drawing number Device type Case outline Lead finish per (1.2.1) (1.2.2) MIL-M-38510 1.2.1 Device types. The device types shall identify the circuit function as follows: Device type Generic number Circuit function Access time 01 See 6.6 2K X 8 CMOS SRAM 25 ns 02 See 6.6 2K X 8 CMOS SRAM 20 ns 1.2.2 Case outlines. The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows: Outline letter Case outline J D-3 (24-lead, 1.290" x .610" x .225"), dual-in-line package K F-6 (24-lead, .640" x .420" x .090"), flat package L D-9 (24-lead, 1.280" x .310" x .200"), dual-in-line package X C-12 (32-terminal, .560" x .458" x .120"), rectangular chip carrier package Y Figure 1 (24-terminal, .308" x .408" x .078"), rectangular chip carrier package Z C-11 (28-terminal, .560" x .358" x .120"), rectangular chip carrier package 3 C-4 (28-terminal, .460" x .460" x .100"}, square chip carrier package 1.3 Absolute maximum ratings. 1/ Supply voltage range (Vcc} ----------+--- -0.5 V dc to 7 V dc Input voltage range 2/- -------+---+--- 0.5 V to Vcc + 0.5 Output voltage range in high impedance state - - - - -0.5 V de to 7 V dc Output current - - ---------+--+-+------- 20 mA Storage temperature range - ------------ -65C to +150C Power dissipation (Pp) - -----+---+-----+-- 864 mW Lead temperature (soldering, 10 seconds) - - - ~ - - +275-C Junction temperature (Tj) - ------------ +175-C Thermal resistance, junction-to-case (Qye): Cases J, K, L, X, Z, and 3 -~------+--+-+- See MIL-M-38510, appendix C Case Y----------+-----+--+--+---+--+--+--4 20 C/W T7__All voltages are with respect to GND. 2/ Vy. (minimum) of -3 V de for short pulse durations of 20 ns or less. Prolonged operation at Vi_ levels below -1 V dc will result in excessive currents that may damage the device. STANDARDIZED 7 MILITARY DRAWING 5962-89690 DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET DAYTON, OHIO 45444 5 DESC FORM 193A SEP 87 > # U. S. GOVERNMENT PRINTING OFFICE: 1988549-9041.4 Recommended operating conditions. Supply voltage range (Vcc) - - - - --------- 4.5 V de minimum to 5.5 V de maximum High level input voltage range (Vyq) - - - - - - - - 2.2 V dc minimum to Vcc + 0.5 V de maximum ; Low level input voltage range (Vq;) 3/ - - - - - - - -0.5 V de minimum to 0.8 V dc maximum Case operating temperature range (Te cere eee ~55 C to +125 C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standard,and bulletin. Unless otherwise specified, the following specification, standard, and bulletin of the Tssue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-M- 38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. BULLETIN MILITARY MI L-BUL-103 - List of Standardized Military Drawings (SMD's). (Copies of the specification, standard, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of 1 MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shalt be as specified in MIL-M-30510 and herein. 3.2.1 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.2 Truth table. The truth table shall be as specified on figure 3. 3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3/ YL (minimum) of -3 V de for short pulse durations of 20 ns or less. Prolonged operation at Vi, levels below -1 V dc will result in excessive currents that may damage the device. STANDARDIZED _ 5962-89690 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET DAYTON, OHIO 45444 3 DESC FORM 1 93A + U.S. GOVERNMENT PRINTING OFFICE: 1988--549-904 SEP 87TABLE I. Electrical performance characteristics. [ T Test Symbol .. conditions | { Group A {Device Limits [Unit -55C < Te +125 C isubgroups{ types i 4.5. V < Voc < 5.5 V { se es I l l { { { i i { { Min { Max { [ Vss = 0 Vv | { { { { { unless otherwise specified [ | { I { | V/ 2/ 3/ 4/ | | I { i | i | | { { { | I [ [ .- | Operating supply current (Iccy {tayay = tayay (minimum), { 1,2,3 1 O1 i 4438 { mA { Wee = 5.5 V, CE = Vy, i { iat other inputs at Vy, | | 02 ! {150 I [ l I I I l Standby power supply iIcc2 [CE > Vyry, a? other inputs { 1,2,3 [1 01 { {45 {mA current TTL { i< VL or > Vin, Voc = 5.5 VV, I l f | | rt =!b MHz | o2 | {50 | [ { T [ [ i ( Standby power supply (Iccg3 ICE > (Vcc -0.2 ), f = O MHz, { 1,2,3 [| ATI | { 20 | mA current CMOS { [Voc = 5.5 V, all other inputs {| { | | | _ i [< 0.2 V or > (Vee -0.2 V) { i { { { { { I | { I { T i oT f [ i i Input leakage current, (Iie =6iVece = 5-5 , { 1,2,3 [ Atl {-10 (10 | pA any input | {VIN = OV to 5.5 V ! ! [ [ [ { [ l [ Off-state output leakage [Io_k {Vcc = 5.5 V, { 1,2,3 { All j[-10 (10 { wA current I (Vin =O V to 5.5 V ! | { { i i i i [ i I f [ i Output high voltage (You {Iquy = -4.0 mA, Veco = 4.5 V, | 1,2,3 {| All |{ 2.4 | Vv ( {Vir = 0.8 V, Vyy = 2.2 V | i | { ( i | { { { { i [ i I | [ I | Output low voltage Vor (Igyt = 8.0 mA, Voc = 4.5 V, i 1,2,3 { All { i0.4{ Vv { {(Vi_ = 0.8 V, Vey = 2.2 V | { I { { i { i l { { { [ I i [ i i i Input capacitance 5/ iC iVyn = OV, : { 4 { All | ( 8.0 | pF ~ | {f = 1.0 MHz, Ta = +25 C, { { { i ( | {see 4.3.1 ( i { { { I i I To I i [ Output capacitance 5/ (Cour (Your = 0 V, : | 4 { All { { 8.0 | pF ~ | (f = 1.0 MHz, Ta = +25 C, { { { | { { {see 4.3.1c t i | i { f I I [ [ [ | Read cycle time |tavaY ! ! 9,10,11 {| Ol { 25 | { ns | [ i | 02 { 20 | | See footnotes at end of table. STANDARDIZED A 506 2-89690 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET DAYTON, OHIO 45444 4 DESC FORM 193A SEP 87 # U. 8. GOVERNMENT PRINTING OFFICE: 1988549-904TABLE 1. Electrical performance characteristics ~ Continued. I | T I I I Test [Symbol | Conditions | Group A [Device {Limits [Unit | | -58C < Tr < +125C |subgroups| types | T i | | 4.5. V