TLP785,TLP785F
2017-04-28
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1
2
3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TO SHIBA Photo coupler GaAs IRE D & P hot o−Transistor
TLP785, TLP785F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission between Different Voltage
Circuits
The TOSHIBA TLP785 consists of a silicon e phototransist or opt i cal ly
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5 kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
• TLP785: 7.62 mm pitch type DIP4
• TLP785F: 10.16 mm pitch type DIP4
• Collector-emitter volt age: 80 V (min)
• Current transfer ratio: 50% (mi n)
Rank GB: 100% (min)
• Isolatio n volta ge: 5000 Vrms (min)
• UL approved : UL1577, File No.E67349
• c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
• Option (D4) VDE approved : DIN EN60747-5-5(Note 1)
• CQC-approved: GB4943.1, GB8898 China Factory
• SEMKO approved: EN60065
EN60950-1, EN62368-1
Note 1 : When a EN60747-5-5 approved type is needed, please
designate “Option(D 4) ”
• Constru cti on mechanical rating
7.62 mm Pitch
Standard Type
10.16 mm Pitch
TLPxxxF Type
Creepage distanc e 7.0 mm (min) 8.0 mm (min)
Clearance 7.0 mm (min) 8.0 mm (min)
Insulation thickness 0.4 mm (min) 0.4 mm (min)
Inner creepage dist ance 4.0 mm (min) 4.0 mm (min)
Unit:
TOSHIBA 11-5L1
Unit:
TOSHIBA 11-5L102
TLP785
TLP785F
Pin Configurations (top view)
Start of commercial production
2010-11
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Current Transfer Ratio (Note)
Type Classification
(Note 1)
Current Transf er Ratio (%)
(IC / IF)
Marking of Classification
IF = 5m A, VCE = 5V, Ta = 25°C
Min
Max
TLP785
None 50 600 Blank
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
Rank YH 75 150 Y+
Rank GRL 100 200 G
Rank GRH 150 300 G+
Rank BLL 200 400 B
Note 1: Ex. rank GB: TLP785 (GB)
Note: Application type name for certification test, please use standard product type name, i. e.
TLP785 (GB): TLP785
Absolute Maximum Ratings (Note) (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 60 mA
Forward current derat i ng (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C
Pulse forward current (Note 2) IFP 1 A
Power dissipation PD 90 mW
Power dissipation derat i ng (Ta ≥ 39°C) ΔPD / °C −0.9 mW / °C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collector−emitter voltage VCEO 80 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation (single circuit) PC 150 mW
Power dissipation derating
(Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Junction temperature Tj 125 °C
Operating t em perature range Topr −55 to 110 °C
Storage temperature range Tstg −55 to 125 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissi pation PT 240 mW
Total package power dissi pation derating
(Ta ≥ 25°C) ΔPT / °C −2.4 mW / °C
Isolation voltage (Note 3) BVS 5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 100 μs pulse, 100 Hz frequency
Note 3: AC, 60 s., R.H. ≤ 60%. Apply voltage to LED pin and detector pin together.
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Recommended Operating Conditions (Note)
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating tem perature Topr −25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing des igns using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Ch aract eristics (Ta = 25°C)
Characteristic Symbol Test Condit i on Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V ― ― 10 μA
Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF
Detector
Collector−emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V
Emitter−collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V
Collector dark current ID(ICEO) VCE = 24 V ― 0.01 0.1 μA
VCE = 24 V ,Ta = 85°C ― 0.6 50 μA
Capacitance (collector to emitter) CCE V = 0 V, f = 1 MHz ― 6 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condit i on Min Typ. Max Unit
Current transf er ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB
50 ― 600 %
100 ― 600
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB
― 60 ― %
30 ― ―
Collector−emitter saturation voltage VCE (sat)
IC = 2.4 mA, IF = 8 mA ― ― 0.4
V
IC = 0.2 mA, IF = 1 mA Rank GB
― 0.2 ―
― ― 0.4
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condit i on Min Typ. Max Unit
Capacitance (input to output) CS VS = 0 V, f = 1 MHz ― 0.8 ― pF
Isolation resist ance RS VS = 500 V 1×10
12
10
14
― Ω
Isolation voltage BVS
AC , 60 s 5000 ― ― Vrms
AC , 1 s, in oil ― 10000 ―
DC, 60 s, in oi l ― 10000 ― Vdc
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Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condit i on Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
― 2 ―
μs
Fall time tf ― 3 ―
Turn−on time ton ― 3 ―
Turn−off time toff ― 3 ―
Turn−on time ton RL = 1.9 kΩ (fig. 1)
VCC = 5 V, IF = 16 mA
― 1.5 ―
μs
Storage time ts ― 25 ―
Turn−off time toff ― 50 ―
Surface-Mount Lead Form Option
TOSHIBA 11-5L107
Weight: 0.25 g (typ.)
TOSHIBA 11-5L106
Weight: 0.24 g (typ.)
Unit: mm
TLP785(LF6)
TLP785F(LF7)
Unit: mm
IF
VCE
VCC
ton
4.5 V
0.5 V
toff
ts
VCC
VCE
IF RL
fig. 1: Switching time test circuit
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Option: Specifications for Embossed-Tape Packing; (TP6) / (TP7)
1. Applicabl e Package
Package Name Product T ype
DIP4LF6 TLP785
DIP4LF7 TLP785F
2. Product Naming System
Type of package used for shipment is denoted by a symbol suffix after a product number. The method of
cl assification is as below.
(Example)
TLP785 (BL−TP6,F
[[G]]/RoHS COMPATIBLE(Note)
Tape type
CTR Rank
Device name
(Example2)
TLP785F (BL−TP7,F
[[G]]/RoHS COMPATIBLE(Note)
Tape type
CTR Rank
Device name
Note: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronics equipment.
3. Tape Dimensions
3.1 Orientation of Device in Relation to Direction of Tape Movement
Device orientation in the recesses is as shown in Figure 2.
Figure2 Device Orientation
3.2 Tape Packing Quantity :2000 devices per reel
Tape feed
P
1pin indication
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3.3 Empty Device Recesses Are as Shown in Table 1.
Table1 Empty Device Recesses
Standard Remarks
Occurrenc es of 2 or more
successive empty device
recesses 0 Within any given 40-
mm section of
tape, not including l eader and trailer
Single empty device
recesses 6 devices (m ax) per reel Not includi ng leader and trailer
3.4 Start and End of Tape
The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes.
3.5 Tape Specification
[1] TLP785(TP6) / TLP 785F(TP7)
･Tape material: Plasti c
･Dimensions: The tape dimensions are as shown in Figure 3.
Figure 3 Tape Forms
TP6 Type
TP7 Type
A
5.1±0.1
5.05±0.1
B
10.6±0.1
12.35±0.1
W
16.0±0.3
24.0±0.3
F
7.5±0.1
11.5±0.1
T
4.2±0.15
4.4±0.1
Unit: mm
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3.6 Reel Specification
[1] TLP785(TP6) / TLP 785F(TP7)
･Material: Plastic
･Dimensions: The reel dimen s ions are as shown in Figur e 4.
Figure 4 Reel Forms
4. Packing
Two reels of photocouplers are packed in a shipping carton.
5. Label Indication
The carton bears a label indicating the product number, the symbol representing classification of standard, the
quantity, the lot number and the Toshiba company name.
6. Ordering Information
When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as
shown in the following example.
(Example)
TLP785(BL−TP6,F 4000pcs.
Quantity (must be a multiple of 4000)
[[G]]/RoHS COMPATIBLE(Note 1)
Tape type
CTR Rank
Device name
Note: The order code may be suffixed with a letter or a digit.
Please contact your nearest Toshiba sales representative for more details.
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronics equipment.
W1
W2
φ330 max
φ100±1.5
φ13.0±0.5
4.0±0.5
2.0±0.5
Unit: mm
TP6 Type TP7 Type
W1
16.5ｔｙｐ 24.4typ
W2 23max 30.4max
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7. Soldering and Storage
7.1. Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of
whether a soldering iron or a reflow soldering method is used.
When using soldering reflow
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below, which is based on the package surface temperature.)
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
Fig. 7.1 An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used
When using solderin g flow
Preheat the devic e at a temperat ure of 150 °C (pa ckage surface temperature) for 60 to 120 seconds.
Mounting condition of 260 °C within 10 seconds is recommended.
Flow soldering must be performed once.
When using solderin g Iro n
Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds not
exceeding 350 °C
Heating by soldering iron must be done only once per lead.
7.2. Precautions for General Storage
Avoid storage locations where devices may be exposed to moisture or direct sunlight.
Follow the precautions printed on the packing label of the device for transportation and storage.
Keep the storage location temperature and humidity wi thin a range of 5°C to 35°C and 45% to 75%,
respectively.
Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty
conditions.
Store the products in locations with mi nimal temperature fluctuations. Rapid temperature changes during
storage can cause con den sati on, resulting in lead oxidation or corrosion, which will deteriorate the solderability
of the leads.
When restoring devices after removal from their packing, use anti-static con tain er s.
Do not allow loads to be applied directly to devices while they are in storage.
If devices have been stored for more than two years under normal storage conditions, it is recommended
that you check the leads for ease of soldering prior to use.
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EN60747-5-5 ‘Option: (D4)’
Attachment: Specification for EN60747-5-5 option: (D4)
Types: TLP785, TLP785F
Type designations for ‘option: (D4) ’, which are tested under EN60747 requirements.
Ex.: TLP785(D4-GR-LF6,F D4: EN60747 option
GR: CTR rank name
LF6: standar d lead bend nam e
F: [[G]]/RoHS COMPATIBLE(Note 1)
Note: Use TOSHIBA standard type number for safety standard application.
Ex. TLP785(D4-GR-LF6,F TLP785
Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronics equipment.
EN60747 Isolation Characteristics
Description Symbol Rating Unit
Application classifi cation
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
I−IV
I−III
―
Climatic cla s sifi cat ion
55 / 115 / 21 ―
Polluti on degree 2 ―
Maximum operating insul at i on voltage TLP785 VIORM 890 Vpk
TLP785F 1140
Input to output test voltage,
Vpr = 1. 6×VIORM, t ype and s am ple test
tp = 10 s, parti al discharge < 5pC
TLP785 Vpr 1424 Vpk
TLP785F 1824
Input to output test voltage,
Vpr = 1.875×VIORM, 100% production t est
tp = 1 s, partial disc harge < 5pC
TLP785 Vpr 1670 Vpk
TLP785F 2140
Highest permissi bl e overvoltage
(transient overvoltage, tpr = 60s) VTR 8000 Vpk
Safety limiti ng values (m ax. permissibl e ratings in case of fault)
current (input current) Psi = 0mW
power (output or total power dissipation)
temperature
Isi
Psi
Ts
400
700
175
mA
mW
°C
Insulation resist ance, VIO = 500 V, Ta=25°C Rsi ≥1012 Ω
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Insulation Related Specifications
7.62 mm pitch
TLPxxx type
10.16 mm pitch
TLPxxxF type
Minimum creepage distance Cr 7.0 mm 8.0 mm
Minimum clearance Cl 7.0 mm 8.0 mm
Minimum insulation t hickness ti 0.4 mm
Comparative tracking index CTI 175
(1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this
value. (e.g.at a standard distance between soldering eye centres of 7.5mm). If this is not permissible,
the user shall take suitab le me asures.
(2) This photocoupler is suitable for ‘safe ele ctrical isolat ion ’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuits.
VDE test sign: Marking on product
for EN60747
Marking on packing
for EN60747
Marking Example: T LP 78 5, TLP785F
P
4
CTR Rank Marking
Lot No.
Device Name
4: Mark for option (D4)
1pin indication
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Figure
1 Partial discharge measurement procedure according to EN60747
Destructive test for qualific ati o n and sampl ing tes ts.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
V
VINITIAL(8kV)
Vpr(1424 V for TLP785)
(1824 V for TLP785F )
VIORM(890 V for TLP785)
(1140 V for TLP785F)
0
t1
tini
t3
t2
tP
tb
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
tP
Vpr(1670 V for TLP785)
(2140 V for TLP785F )
VIORM(890 V for TLP785)
(1140 V for TLP785F)
V
t
t3 t4
tb
Figure
2 Partial discharge measurement procedure according to EN60747
Non-destructive test for100% inspection.
Method B
(for sample test,non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
= 1 s
= 1.2 s
Figure
3 Dependency of maximum safety ratings on ambient temperature
500
400
300
200
100
0
0
25
50
75
100
125
150
175
1000
800
600
400
200
0
Ta (°C)
Psi
Isi
Isi
(mA)
Psi
(mW)
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I
F
-Ta
P
C
-Ta
F
orward current
IF (mA)
Collect or power dissipat i on P
C (mW)
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
∆V
F
/∆Ta- I
F
IF- V F
Forward voltage temperature
coefficient
ΔVF/ΔTa (mV/°C)
Forward current I
F (mA)
Forward current I
F
(mA)
Forward voltage V
F
(V)
IF P – V F P
Pulse forward current I
FP (mA)
Pulse forward voltage V
FP
(V)
*The above graphs show typical characteristic.
0
20
40
60
80
100
-20 020 40 60 80 100 120
0
40
80
120
160
200
-20 020 40 60 80 100 120
-3
-2.6
-2.2
-1.8
-1.4
-1
-0.60.1 110 100
0.1
1
10
100
0.4 0.9 1.4 1.9
1
10
100
1000
00.4 0.8 1.2 1.6 22.4
Pulse width ≤ 10 μs
Repetitive frequency=100 Hz
Ta=25°C
This curve show s the maximum
limit to the forward current.
This curve shows the
maximum limit to the
collector power dissi pat i on.
Ta=25˚C
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ICEO-Ta
I
C
- V
CE
Collect or dark current ID (
μA )
Collector current I
C (mA)
Ambient temperature Ta (°C)
Collector-emitter voltage V
CE
(V)
IC- V CE
IC- I F
Collector current I
C (mA)
Collect or cur re nt I
C (mA)
Collector-emitter voltage V
CE
(V)
IC/IF - I F
Forward current IF (mA)
Current transfer ratio I
C / IF (%)
Forward current I
F
(mA)
*The above graphs show typical characteristic.
0.0001
0.001
0.01
0.1
1
10
020 40 60 80 100
0
20
40
60
80
0 2 4 6 8 10
0
10
20
30
40
00.2 0.4 0.6 0.8 11.2
1
10
100
1000
0.1 110 100
5
10
50
30
20
15
Ta=25˚C
IF= 2 mA
Ta=25˚C
5
10
50
30
20
15
IF= 2 mA
VCE=5 V
VCE=0.4 V
Ta=25˚C
VCE =24 V
Ta=25˚C
VCE=5 V
VCE=0.4 V
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I
C
- Ta
V
CE(sat)
- Ta
Collect or cur re nt I
C (mA)
Collector-Emitter saturation Voltage
VCE(sat) (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Switching time - RL
Switching time (μs)
Load resistanc e RL (kΩ)
*The above graphs show typical characteristic.
0.1
1
10
100
-40 -20 020 40 60 80 100
0
0.04
0.08
0.12
0.16
0.2
-40 -20 020 40 60 80 100
1
10
100
1000
110 100
IF=5 mA,
IC=1 mA
IF=0.5 mA
5
1
10
20
t
off
Ta=25˚C
IF=16 mA
VCC=5 V
ts
ton
VCE=5 V
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RESTRICTIONS ON PRODUCT USE
• Tos hi ba Corporation, and its subsidiaries and affiliates (coll ect i vely "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, soft ware and systems (coll ect i vel y "Product" ) without not ic e.
• This document and any information herein may not be reproduced without pri or writt en permiss i on from TOSHIBA. Even with
TOSHIBA's written permission, reproduct i on is permiss i bl e only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product 's qual ity and reliabil i t y, Product c an malfuncti on or fail. Cust omers are
responsibl e for complyi ng with safety standards and for providing adequate designs and safeguards for thei r hardware, s oftware and
systems which minimize risk and avoid situations in which a malfunction or fai l ure of Product could cause loss of hum an life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product int o their own applicati ons, cust om ers must also ref er to and comply with (a) the latest versions of all
relevant TOSHIBA infor mation, including without limitation, this document, the specifica tions, the data sheets and application note s for
Product and the precautions and conditions set forth in the " T OSH IBA Semiconductor Reliability Handbook" and (b) the in structions for
the applicati on with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, i ncludi ng but not limit ed to (a) determini ng the appropriatenes s of the use of this Product in such design or
applicat i ons; (b) evaluati ng and determi ni ng the applic abi l ity of any informati on contained i n this document, or in charts, diagrams,
programs, al gorithms, s ample applic ation circuits, or any other referenced documents; and (c ) validati ng all operat i ng parameters f or
such designs and applications. TOSHIB A AS S UMES NO LIABILITY FOR CUS TOMERS' PRODUCT DES IGN OR APPLICATIONS.
• PRODUCT IS NEI THE R INTENDE D NO R WAR RANTED FOR USE IN EQUIPME NTS OR SYSTEMS TH AT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR REL IABILITY, AND/OR A M ALFUNCTION OR FAI L URE OF WHICH
MAY C AUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLI C IMPACT
("UNINTENDED USE"). E xcept for s peci f ic applications as expressly stated in this document, Unintended Us e i ncludes, without
limitati on, equipm ent used in nuclear fac ili t i es, equipm ent used in the aerospace industry, m edic al equipment, equipm ent us ed for
automobiles, trains, ships and other transport ation, traffic signaling equipment, equipment us ed to control combustions or explosions,
safety devices, elevators and escalators , devic es rel ated to electric power, and equipment used in finance-related fi el ds. IF YOU USE
PRODUCT FOR UNINTE NDE D USE, TOSHI BA ASSUMES NO LIABILITY FOR PRODUCT. F or details, please contact your
TOSHIBA sal es representative.
• Do not disassemble, anal yze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated int o any products or systems whose manufacture, us e, or sale is prohibit ed under any
applicable l aws or regulations.
• The infor mation contained herein is presented only as guidance for Product use. No responsibili t y is assumed by TOSHIBA for any
infringement of patents or any other intellect ual property ri ght s of thi rd parties t hat may result f rom the use of Product. No licen se to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOW ABLE BY LAW, TOSHIBA (1) ASS UMES NO LIABILITY
WH ATSOEVER, INCLUDING W ITHOUT LIMITATION, INDIRECT, CONSE Q UENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCL UDING WITHOUT LIMITATION, L O SS OF PROFITS, LOSS OF OPPORTUNITIES, BUSI NES S I NTE RRUPTION AND
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FOR A PARTICULAR PURPOSE, ACC URACY O F INFORMATION, OR NONINFRINGEME NT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is har mful to hum ans if consu med or ab sorbed, w hether in the form of du st or vapor.
Handle with care and do not break, cut, crush, grind, dissol ve chemically or ot herwise expose GaAs i n Product.
• Do not use or o therw ise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stock pili ng or manufact uri ng of nuclear, chemical, or biological weapons or missile t ec hnology
products (mass destructi on weapons). Product and related software and technology may be controlled under the applicabl e export
laws and regulations includi ng, without limi t ation, t he Japanes e Foreign Exchange and Foreign Trade Law and the U.S. Export
Administ ration Regul at i ons. Export and re-export of Product or related software or technology are strictly prohibited except i n
compliance with al l applicabl e export laws and regulati ons.
• Please contact your TOSHIBA s ales representative for details as to environmental matters such as the RoHS compatibilit y of Product.
Please use Product in compliance with all appli c able laws and regulations t hat regulate the inclusion or use of controlled substances,
including without limi t ation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIA B ILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESUL T OF NONCOMPLIANCE WITH APPLICAB L E LAWS AND REGULATIONS.