ON Semiconductor Switching Transistor MMBT4403LT1 PNP Silicon 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -40 -- -40 -- -5.0 -- -- -0.1 -- -0.1 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) IBEV Collector Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) ICEX Vdc Vdc Vdc Adc Adc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 1 Publication Order Number: MMBT4403LT1/D MMBT4403LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max Unit 30 60 100 100 20 -- -- -- 300 -- -- -- -0.4 -0.75 -0.75 -- -0.95 -1.3 200 -- -- 8.5 -- 30 1.5 15 0.1 8.0 60 500 1.0 100 ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc)(3) (IC = -500 mAdc, VCE = -2.0 Vdc)(3) hFE Collector-Emitter Saturation Voltage(3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) fT Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter-Base Capacitance (VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hoe MHz pF pF k X 10-4 -- mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -30 30 Vdc, VEB = -2.0 2.0 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) td -- 15 tr -- 20 (VCC = -30 30 Vdc, IC = -150 150 mAdc, IB1 = IB2 = -15 mAdc) ts -- 225 tf -- 30 ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V +2 V 0 -16 V 200 < 2 ns +14 V 0 1.0 k 10 to 100 s, DUTY CYCLE = 2% 200 < 20 ns CS* < 10 pF 1.0 k -16 V 1.0 to 100 s, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 CS* < 10 pF MMBT4403LT1 TRANSIENT CHARACTERISTICS 25C 100C 30 Ceb VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 20 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 0.1 30 10 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 20 Figure 3. Capacitances 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 50 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 30 20 10 10 7.0 7.0 10 20 30 50 70 200 100 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 200 IC/IB = 10 t s, STORAGE TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 IC/IB = 20 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 3 300 500 300 500 MMBT4403LT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 10 8 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1 kHz IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k 6 4 2 6 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 50 A 100 A 500 A 1.0 mA 0 100 50 2k 5k 10k 20k 50k 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 hie , INPUT IMPEDANCE (OHMS) 700 500 50k obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly-numbered curves on each graph. 100k MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 20k 10k 5k 2k 1k 500 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 5.0 7.0 10 500 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hoe, OUTPUT ADMITTANCE ( mhos) hfe , CURRENT GAIN 1k Figure 9. Source Resistance Effects 1000 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 500 Figure 8. Frequency Effects This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To 0.1 0.1 200 RS, SOURCE RESISTANCE (OHMS) h PARAMETERS VCE = -10 Vdc, f = 1.0 kHz, TA = 25C 30 0.1 100 f, FREQUENCY (kHz) 100 50 20 5.0 2.0 1.0 0.1 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 4 5.0 7.0 10 MMBT4403LT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 70 50 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 1.0 0.4 0.2 0.1 0.2 0.5 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 VC for VCE(sat) 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 Figure 16. "On" Voltages VS for VBE 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 17. Temperature Coefficients http://onsemi.com 5 500 MMBT4403LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 6 MMBT4403LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H K J STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 7 DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT4403LT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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