2SK1 172 SIPMOS#+/*7MOS-FET NF + L787 MOS-FET E-II SERIES N-CHANNEL SILICON POWER MOS-FET BE : Features Metis : Outline Drawings 249829 2EF ee High speed seiiching | = |) oo : eet Ee Low on-resistance CO2Btie eu No secondary breakdown SERRA hau Low drying power SRME TAS High voltage Var@TS0VGE Vou =t30V Guarantees GAs : Applications 8247729 RE Sesiching regulators eUPS UPS S0C/DCaeF OC-0 converters SHENSS 3 Ganeral purpose power arnpliet EDEL Beers = Max. Ratings and Characteristics Hie @#HEATH : Absolute Maximum RatingsiTc= 25C) Equivalent Circunt Schematic fhartis as Symbols |_ Ratings | Units i a ae CPE tes 4-2 |] Vo | | f+. tf > | b a | A ee a a ae t iia 2 & i | lea | _- 3S |) A Pr -bs ROE | Voss = v_ | fF @ % @ oF | Po o || UW : . For + Gf | Te ta) | SoscetS [a is ae =55- +150] C SRK = Flectical Characiarstics(Tc= 25 Cl irerns Symbals: Test Conditions Mm. Typ. | Max Uns Fede RB | Views | Te lmA Ves =0V | a0 1 | _ Pbt Se RE | Vow | b= lmA- Ves = Ven th] a5 | . 30 ; Vee=SY Ta=2C | 10 5d aA cre he can eee, | ae Vis OV Ta=isc | a2) 10 | mA iB + il h & has | Vo{=MV os =oV 10 | Im} | fark ee a ee | ao | ss To Biko, 7 Fs | gw lo 2A Ves 25V | eo | 40 5 # | Ven=25V a a hy e Mm | Ce Vos=0V | eo, 0 pF r a e Bo Cem f =IMHz i 30 a R= et oo me Oo v= eOV bd 12% by P : 65 1a ie E faietti Vou LOY =| 10 T "e| ns - - t+ F " Oe ; Ey =20 r Ta zs | Fit -F REE | Vm Ie=2Xloe Vor=0V Ta=2C | | Oo) 1%) VO i en oe oe ee te low dite =A es Toe SC 700 | ra SSR > Thermal Characteristics hems Symbols: Test Conditions | Mm. Typ. | Max, | Unis . | Reem | chanmeltoair | | | 350 | Cw * it ik _ channel to case L565 Cw P= AD-2F