enna G E SOLID STATE Ol DE sa7sos1 ooivue7 7 3875081 GE SOLID STATE _ OE 17427. 0 7= 37-23 . General-Purpose Power Transistors . File Numbr 677 2N6246, 2N6247, 2N6248, 2N6469 Silicon P-N-P Epitaxial-Base, TERMINAL DESIGNATIONS - High-Power Transistors General-Purpose Types of Switching and Linear-Amplifier Applications c EN (FLANGE) / Features: @ High dissipation capability: 125 W at 26C 9208-27856 @ Low saturation voltages . m@ Maximum safe-area-of-operation curves High gain at high current JEDEC TO-204AA RCA-2N6246, 2N6247, 2N6248, and 2N6469 are epitaxial- base silicon p-n-p transistors featuring high gain at high current. All of these devices have a dissipation capability of 125 watts at case temperatures up to 25C. They differ in voltage ratings and in the currents at which the parameters are controlled, All are supplied in the JEDEC TO-204AA package. AFormerly RCA Dev. Nos. TA7281, TA7280, TA7279, and TA8724, respectively. Maximum Ratings, Abso/ute-Maximum Values: 2NG469 2NG246 2N6247 2N6248 *COLLECTOR-TO-BASE VOLTAGE , . ....... VoBO -50 -70 -90 110 Vv COLLECTOR-TO-EMITTER VOLTAGE: * With external base-to-emitter resistance (Rge)= 1002. . . . . . . . . + VCER -50 +70 -30 -110 Vv With baseopen, . . , , . ww we ew ee VCEO -40 -60 -80 -100 v *EMITTER-TO-BASE VOLTAGE, . . ..... =... . VEBO 5 5 5 5 Vv CONTINUOUS COLLECTOR CURRENT. . . . . .. . Ie 15 ~15 ~15 -10 A *CONTINUOUS BASE CURRENT . 2... .. . . . . UB -5 5 - 8 A *TRANSISTOR DISSIPATION: PT At case temperaturesup to 25C. 1. ww we 125 125 125 125 i] . At case temperatures above 25C, . . 1 1 wwe _ See Fig. 2. ___---* *TEMPERATURE RANGE: Storage & Operating (Junction) 2. 6 2 1 we a_ 65 to +200 ___- 9 *PIN TEMPERATURE (During Soldering}: At distances 2 1/32 (0.8 mm} from , seating plane for 10s max. 2. 1 2 6 ew ee et +___ +235 ___ C *in accordance with JEDEC registration data format (JS-6 ROF-2). 431 0970 F~-13G E SOLID STATE O1 Ey 3475081 OOLP74e26 4 I 3875081 GE SOLID STATE O01 17428 vo t-33Z3 General-Purpose Power Transistors 2N6246, 2N6247, 2N6248, 2N6469 ELECTRICAL CHARACTERISTICS FOR P-N-P TYPES, Aft case temperature (T) = 25C unless otherwise specified TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL | VOLTAGE CURRENT 2NG4AG9 2N6246 UNITS Vde Adc 4 Voce VBE tc Ig Min. Max. Min. Max, Collector-Cutoff Current: With external base-emitter \ 35 200 - - A resistance (Rye) = 100 2 CER | _55 - - - | -20| # . With base-emitter 45 |] 15 - 200 - - A junction reverse-biased ; 65 | 1.5 - - - 200 a *| With reverse bias cEX [45 [15 - | [- | - | oma and Tc = 150C 55 | 1.5 - - - 5 ~20 0 - -1 - - . . With base open Iceo 30 0 _ _ _ 1 mA * | Emitter-Cutoff Current lego 5 0 - -5 - 5 mA * | OC Forward-Current 4 53 20 150 - - Transfer Ratio KEE 4 ~74 - - 20 100 -4 158 5 - 5 ~ Collector-to-Emitter Sustaining Voltage: *| With base open Veo (sus) ~0.2 | 0 |-40b} | -sob] - y ! With external base-emitter b b resistance (Rage) = 100 2 Voert(sus) ~0.2 45 ~ ~85 ~ * | Base-to-Emitter Voltage Vee -4 164 = -3.5 - - Vv : , 4 -74 - - - -2 : 54 -0.5 - -13 - - . * | Collector-to-Emitter Vorlsat) 73 | -0.7 - - ~ ~13 Vv Saturation Voltage cE 154 -5 = ~3.5 = - ee ee - - ~2.5 ye * | Magnitude of Common-Emitter Small-Signal Short-Circvit Forward-Current Transfer Ratio; Intel ~4 71 5 8 f = 2 MHz * |Common-Emitter, Small-Signal Short-Circuit, Forward-Current hfe 4 -1 25 - 25 - Transfer Ratio: f=1kHz Thermal Resistance: Junction-to-case Rec - 1.4 - 1.4 C/W * tn accordance with JEDEC registration data format (JS-6 RDF-2). i @ Pulsed: pulse duration = 300 us, duty factor = 18%. b CAUTION: CAUTION: Sustaining voltages Vcggtsus) and VeeRtsus) MUST NOT be measured on a curve tracer. .G E SOLID STATE Oo1 a | 3475041 0017429 a i . 3875081 GE SOLID STATE O1E 17429 O73325 . General-Purpose Power Transistors = 2N6246, 2N6247, 2N6248, 2N6469 ; . t ELECTRICAL CHARACTERISTICS FOR P-N-P TYPES, At case temperature (Tc) = 25C unless otherwise specified TEST CONDITIONS LIMITS CHARACT. t ARACTERISTIC SYMBOL VOLTAGE CURRENT 2NG247 2N6248 UNITS Vde Adc Voce |Vee | Ic Ip | Min. | Max."] Min. | Max. - Collector-Cutoff Current: With external base-emitter | -75 - 200 - - A resistance (Rpg) = 100 2 ceR | -96 - - - |-200 | # . With base-emitter ~-85 1.5 ~ 200 - - A junction reverse-biased ; 100} 1.5 - - - 200 # With reverse bias, CEX 70 1.5 - - - mA at Te = 160C - |-90 | 1.5 - - - - . . 40 0 = 1 - - With base open IcEO 50 0 _ _ _ +1 mA * lEmitter-Cutoff Current leBo 5 0 - ~1 - -1 mA 4 5a - _ 20 100 * 1DC Forward-Current h ~4 -63 20 100 - - Transfer Ratio FE 4 108 - - 5 - 4 154 5 ~ - - Collector-to-Emitter Sustaining Voltage: * | With base open Vceolsus) -0.2 0 oe ~100b | - V With external base-emitter b b resistance (Rag) = 100 2 Vcer|sus) 0.2 88 105 . . 4 62 = 18 [ _ Base-to-Emitter Voltage Vee 4 _5a _ _ _ ~1.8 Vv 5? -0,5 - - - -1.9 * |Collector-to-Emitter Vealeat] 64 -0.6 - -1.3 - - Vv Saturation Valtage cE 154 -4 - ~-3.5 - - 10? ~2 - - - 3.6 * {Magnitude of Common-Emitter Small-Signal Short-Circuit ; thtel _4 -t 5 _ 5 _ Forward-Current Transfer Ratio: f=2MHz * | Common-Emitter, Small-Signa, Short-Circuit, Forward-Current hte -4 -1 25 - 25 - . Transfer Ratio: f=1kHz Thermal Resistance: Junction-to-case Roc - 14 - 1.4 ocMw * In accordance with JEDEC registration data format (JS-6 RDF-2). 2 Pulsed: pulse duration = 300 us, duty factor = 1.8%. cauTiON: Sustaining voltages Vceolsus) and Vcerfsus) MUST NOT be measured on a curve tracer. . = 433 - 0972 G-0l lieG E SOLID STATE 1 pe 3475081 oouzuzo 7 3875081 G E SOLID STATE O1E 17430 D General-Purpose Power Transistors 2N6246, 2N6247, 2N6248, 2N6469 CASE TEMPERATURE (Tc) * 25C (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) 246-7 PULSE OPER * FOR SINGLE NONREPETITIVE COLLECTOR CURRENT (I)A ogo MAX.= ~40V (2N6469) Voeo MAX.* -6OV (2N6246) Voeo MAX.2+ 80V (2N6247) Yoeo MAX.*-100V (2N6248) 1 2 4 6 819 2 40 60 80 100 2 COLLECTOR -TO-EMITTER VOLTAGE (Voce) V 9265 -22379R! Fig.1 Maximum operating areas for all types. TEMPERATURE AT SPECIFIED v : n nm tes a gh cs z es a Be Bs 3s v3 5. & o w 2 # e = os @ & 2 Q 2 50 7s 100 Rs 160. 175 200 CASE TEMPERATURE (Tol "Ct 92C5- 22456 COLLECTOR CURRENT (Ig)-A 33-23 ; g2cs-1957) Fig. 2 Current derating for all types. Fig. 3 Typical collactor-to-emitter saturation-voltage characteristics for 2N6246, 2N6247; 2N6248, and 2N6469. 434 0973 G-02G E SOLID STATE ox pe ss7sos. covzya. 9 3875081 GE SOLID STATE O1E 17431 0 TS323 Weneral-rurpose rower Transistors a , 2N6246, 2N6247, 2N6248, 2N6469 N6246-7, 2NG46 Ig MAX. (CONTINUOUS Law CASE TEMPERATURE (Tc)=100C < 4 o H ~ kK z Ww fi > o o Ee o uJ ! oO Veep MAX.=-40V (2N6469) VcEo MAX.4-60 V (2NG246) Voeo MAX.2-80V (2N6247) Voce MAX. -100V (2N6248) { 2 4 6 8 Io 2 40 60 80100 COLLECTOR-TO~EMITTER VOLTAGE (VcFe)-V 92cs-22380RI Fig, 4 - Maximum operating areas for all types. COLLECTOR-TO-EMITTER VOLTAGE {ce)s-4 VOLTAGE Ivcehe-4 CURRENT OC FORWARD CURRENT TRANSFER RATIO bre 0.01 -100 =I st 1 7 COLLECTOR CURRENT (I 1A COLLECTOR CURRENT (I}--4 sacs-21ea7 9205-19576R1 Fig. 5 Typical de beta charactaristics tor 2N6246, 2N6247, Fig. 6 Typical de beta characteristics for 2N6248. and 2N6469, 435 0974 G-03- ane G E SOLID STATE D1 pe ff 375081 oo1743e OU i 3875081 G E SOLID STATE O1E 17432 D T-3323 General-Purpose Power Transistors : ,2N6246, 2N6247, 2N6248, 2N6469 COLLECTOR-TO-EMITTER VOLTAGE . COLLECTOR CURRENT (I )~-A BASE CURRENT (Tg)- ma GASE-TO-EWITTER VOLTAGE {Yge} V 92$-19879 BASE-TO-EMITTER VOLTAGE IVBEY-V oe sas Fig. 7 Typical transfer characteristics for 2N6246, 2N6247, Fig. 8 Typical input characteristics for 2N6246, 2N6247, 2N6248, and 2N6469. and 2N6469. COLLECTOR-T0-EMITTER VOLTAGE (Vop)e-a BASE CURRENT {Igi mA COLLECTOR CURRENT (IlA COLLECTOR -TO-EMITTER VOLTAGE [Veg 1 BASE-TO-EWITTER VOLTAGE (Voe}- 92C5-19577R1 g2ts-1ss78 Fig. 9 Typical input characteristics for 2N6248. Fig. 10 Typical output characteristics for 2N6246, 2N6247, and 2N6469. TEMPERATURE (Tc 1425 C VOLTAGE tce}s~4 Vv . Cghe= % z =z < | | - @ = a & * 3 5 3 z E s 3 z & Q 8 a 4 z 3 8 z a o ool +01 -| ~10 COLLECTOR-TO-EMITTER VOLTAGE (Veg}--V COLLECTOR CURRENT (Zg)-A ag 926$-210 40RI Fig. 11 Typical output characteristics for 2N6248, Fig. 12 Typical gain-bandwidth product vs. collector current for . 2N6246, 2N6247, 2N6248, and 2N6469. 436 0975 G-04G E SOLID STATE pe za7soa. oo1zya3 a J 3875081 G E SOLID STATE se Pete gee Vebeshestss PULSE OURATION+20p = REPETITION RATE 7560 | PULSES /s COLLECTOR SUPPLY VOLTAGE iWegl= =20V CASE TEMPERATURE {Te 525C Oe 17433. 0 T"S323 General-Purpose Power Transistors 2N6246, 2N6247, 2N6248, 2N6469 Veo 10-1 780 Saeed Serta *Xpot w SRI SEHEE 78 "282 tom a 3:Stat raansroawer *: r 14 Ce, CHSO OR EQUIV 4 aay | I sone GOH? 36 layimesw VERT : ike, iter i twohetioucTiver | gscu.oscore . - ? cHape 3 MERCURY aE ae one [ WoGEL Ne 08 5 SHEE CLARE [028,08 2N6246 OF EQUIVALENT s w. EQUIVALENT 2NG2a7 z 2N6246 1H tooa 2N6469 HORIZ F 7 v2 = Vero tsnst ee i DELAY THE (Ig) 7 2 4 6 a Le) COLLECTOR CURRENT(EG)A . 923-19561 #2C5-24700R1 . " t fabe Fig. 13 Typical saturated switching characteristics for 2N6246, Fig. 14 Circuit used io measure sustaining voltages . - 2N6247, 2N6248, and 2N6469, Vogofsus) and Vcea(sus) for ail types. "Vee weuT -5 TO-20 TekiRome Pepe ia, O ect 20V OR EQUIVALENT ! E Yeeotsus) Veer tess} SE 1ON 3 *20us 4 Ip eee ea 12pF * a Ie aad oe ceopE 8 | teeTRONn : a) AB ABE OD 2G -200 200 ad te taia oF go 1 QUIVALEN . 4 0 -40-60-80-100 9 -45-65-85-105 8 COLLECTOR- TO-EMITTER VOLTAGE (Vce} * PULSE GURRENT (Ip) RANGE * 0.6-0.6 A THE SUSTAINING VOLTAGES Vag o(eut) AND Veen(tut) ARE ACCEPTABLE WHEM THE TRACES FALL TO ERIN f 0 ABOVE P iNT Aq Fort PE oO anager POINT "@" FOR 26246; POINT ne TOR aNez7/ANO POINT D" FOR a Vag? #2 10 +10 Re 1S CHOSEN FOR Ie . 4 Veg AND Vep ARE MEASURED FOR Ip s2cs-24702 Al Tp, AND Ip, ARE MEASURED WITH Sh croNne CURRENT PROBE P-6019 aNd TYPE (34 AMPLIFIER,OR EQUIVALENT 92CS-19584R3 Fig. 15 Oscilloscope display for measurement of sustaining Fig. 16 Circuit used to measure switching times for 2N6246, voltages (test circuit shown in Fig. 14), 2N6247, 2N6248, and 2N6469. * a Ge ag 3 & e E BF veeton 1 2% | | . 22 l20v -+- + hee THE ow ote wl bg lerg F | fe ee WAVE FORM as aot wl Sife 928-19807 f . Fig. 17 Oscilloscope display for measurement of switching times. 437