CBCP68 NPN Central CBCP69 PNP Semiconductor Corp. SILICON COMPLEMENTARY LTRA TOR SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. SOT-223 CASE MAXIMUM RATINGS (T,a=25C) SYMBOL UNITS Collector-Emitter Voltage VCES 25 V Collector-Emitter Voltage VCEO 20 Vv Emitter-Base Voltage VEBO 5.0 Vv Collector Current lo 1.0 A Collector Current-Peak lom 2.0 A Base Current Ip 100 mA Base Current-Peak IBM 200 mA Power Dissipation Pp 2.0 W Operating and Storage Junction Temperature Ty: Tstg -65 to +150 C Thermal Resistance Oya 62.5 oC ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO Vop=e5v 10 HA IcBO Vop=25V, Ta=150C 1.0 mA lEBO Vep=5.0V 10 HA BVcBO IG=10yA 25 Vv BVCEO Io=10mA 20 Vv BVEBO IE=1.0nA 5.0 Vv VCE(SAT) I=1.0A, tg=100mA 0.5 Vv VBE(ON) VoE=10V, I=5.0mA 0.6 Vv VBE(ON) Voge=1.0V, Io=1.0A 1.0 Vv hee VcE=10V, Ic=5.0mA 50 96SYMBOL TEST CONDITIONS MIN TYP MAX UNITS hee VcE=1.0V, lo=500mA 85 375 hee VcE=1.0V, IG=1.0A 60 fr Voe=5.0V, lo=10mA, f=20MHz 65 MHz Cob Vop=5.0V, Ip=0, F=450kHz 25 pF All dimensions in inches (mm). -248(6.30) > 0-7 .264(6.71) .063(1.60) terre tate | -190(9.90) .264(8.71) ~146(3.71) .287(7.29) 15 .009(0.23) rOa(0. a3) ~w/ .033(0.64) i ,049(1.04) .099(2.31) .024(0.61) 7031(0.78) .189(4.60) LEAD CODE: olla aia 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR R2 97