Transistor Description: High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage inverters, switching regulators and line - operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products. Features: * * Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25C), PD Derate above 25C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 700V : 350V : 8V : 8A : 4A : 125W : 0.714mW/C : -65C to +200C : -65C to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min. Max. Unit V(BR)CEO Ic = 100mA, IB = 0 350 - V lCEX VCE = 700V, VEB(off) = 1.5V - 0.5 ICEO VCB = 350V, IB = 0 - 0.5 IEBO VEB = 8V, IC = 0 - 1 VCE = 5V, IC = 3A 12 60 - VCE = 5V, IC = 8A 3 - - IC = 3A, IB = 0.6A - 1.5 IC = 8A, IB = 2.67A - 5 OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current mA ON Characteristics (Note 1) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base- Emitter Saturation VoItage VBE(sat) IC = 8A, IB = 2.67A - 2.5 Base-Emitter On Voltage VBE(on) IC = 3A, VCE = 5V - 1.5 V www.element14.com www.farnell.com www.newark.com Page <1> 07/09/12 V1.0 Transistor Small-Signal Characteristics Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.3A, f = 1 MHz, 5 - MHz Output Capacitance Cobo VCB = 10V, IE = 0, f = 0.1 MHz - 250 pF Rise Time tr VCC = 125V, IC = 3A, IB = 0.6A - 0.6 us Storage Time ts - 1.6 us Fall Time tf VCC = 125V, IC = 3A, IB1 = 0.6, IB2 = 1.5A 0.4 us Switching Characteristics Note 1. Pulse Test: Pulse Width 07/09/12 V1.0