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Transistor
Description:
High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage
inverters, switching regulators and line – operated amplier applications.
Especially well suited for switching power supply applications in associated
consumer products.
Features:
• Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A
• Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO : 700V
Collector-Emitter Voltage, VCEO : 350V
Emitter-Base Voltage, VEBO : 8V
Continuous Collector Current, IC : 8A
Base Current IB : 4A
Total Device Dissipation (TC = +25°C), PD : 125W
Derate above 25°C : 0.714mW/°C
Operating Junction Temperature Range, TJ : -65°C to +200°C
Storage Temperature Range, Tstg : -65°C to +200°C
Collector-Emitter Breakdown Voltage V(BR)CEO Ic = 100mA, IB = 0 350 - V
Collector Cut-Off Current
lCEX VCE = 700V, VEB(off) = 1.5V - 0.5
mA
ICEO VCB = 350V, IB = 0 - 0.5
Emitter Cut-Off Current IEBO VEB = 8V, IC = 0 -1
Parameter Symbol Test Conditions Min. Max. Unit
DC Current Gain hFE
VCE = 5V, IC = 3A 12 60 -
VCE = 5V, IC = 8A 3 - -
Collector-Emitter Saturation Voltage VCE(sat)
IC = 3A, IB = 0.6A - 1.5
V
IC = 8A, IB = 2.67A - 5
Base- Emitter Saturation VoItage VBE(sat) IC = 8A, IB = 2.67A - 2.5
Base-Emitter On Voltage VBE(on) IC = 3A, VCE = 5V - 1.5
OFF Characteristics
ON Characteristics (Note 1)
Electrical Characteristics: (TA = +25°C unless otherwise specied)
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Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Note 1. Pulse Test: Pulse Width </= 300μs, Duty Cycle </= 2%.
Current Gain-Bandwidth Product fTVCE = 10V, IC = 0.3A, f = 1 MHz, 5 - MHz
Output Capacitance Cobo VCB = 10V, IE = 0, f = 0.1 MHz - 250 pF
Rise Time trVCC = 125V, IC = 3A, IB = 0.6A - 0.6 us
Storage Time tsVCC = 125V, IC = 3A, IB1 = 0.6,
IB2 = 1.5A
- 1.6 us
Fall Time tf0.4 us
Small-Signal Characteristics
Switching Characteristics
Description Part Number
Transistor, Bipolar, TO-3, NPN, 8A, 350-700V, 125W 2N6308
Part Number Table
Dimensions : Millimetres
