VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 1Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD2503X01 and VEMD2523X01 are high speed and high
sensitive PIN photodiodes in a miniature surface mount
package (SMD) with dome lens. The clear epoxy allows light
detection of a wide wavelength range from 350 nm to
1120 nm. The photo sensitive area of the chip is 0.23 mm2.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and neat infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 35°
• Package matched with IR emitter series
VSMB2943X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
•Light curtain
• Detector for optical switch
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
VEMD2503X01 VEMD2523X01
PRODUCT SUMMARY
COMPONENT Ira (μA) (deg) 0.1 (nm)
VEMD2503X01 10 ± 35 350 to 1120
VEMD2523X01 10 ± 35 350 to 1120
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMD2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 7 Tsd 260 °C
Thermal resistance junction/ambient Acc. J-STD-051 RthJA 250 K/W
VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 2Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF1V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 32 V
Reverse dark current VR = 10 V, E = 0 Iro 110nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD4pF
VR = 5 V, f = 1 MHz, E = 0 CD1.3 pF
Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo350 mV
Temperature coefficient of VoEe = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, = 950 nm Ik10 μA
Temperature coefficient of IkEe = 1 mW/cm2, = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 71014μA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity p900 nm
Range of spectral bandwidth 0.1 350 to 1120 nm
Rise time VR = 10 V, RL = 1 k, = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 k, = 820 nm tf100 ns
20
1
10
100
1000
Iro - Reverse Dark Current (nA)
Tamb - Ambient Temperature (°C)
94 8427
VR = 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
VR = 5 V
λ = 950 nm
010080
60
4020
0.1
1
10
100
0.01
Ira - Reverse Light Current (µA)
Ee - Irradiance (mW/cm2)
VR = 5 V
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
VR- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 3Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
REFLOW SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
0.2
0.4
0.6
0.8
1.0
1.2
400 500 600 700 800 900 1000 1100
21553 λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
Srel - Relative Radiant Sensitivity
ϕ - Angular Displacement
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 4Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VEMD2503
VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 5Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VEMD2523
VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 6Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VEMD2503
VEMD2503X01, VEMD2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 7Document Number: 84163
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VEMD2523
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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