1N4150W-V
www.vishay.com Vishay Semiconductors
Rev. 1.3, 27-Jul-12 1Document Number: 85720
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• For general purpose and switching
• This diode is also available in other case styles
including the DO-35 case with the type
designation 1N4150, and the MiniMELF case
with the type designation LL4150.
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL
CONSTRUCTION REMARKS
1N4150W-V 1N4150W-V-GS18 or 1N4150W-V-GS08 A4 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 50 V
Maximum average forward rectified current IF(AV) 200 mA
Maximum power dissipation (1) Ptot 410 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 375 K/W
Maximum junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
1N4150W-V
www.vishay.com Vishay Semiconductors
Rev. 1.3, 27-Jul-12 2Document Number: 85720
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 1 mA VF540 620 mV
IF = 10 mA VF660 740 mV
IF = 50 mA VF760 860 mV
IF = 100 mA VF820 920 mV
IF = 200 mA VF870 1000 mV
Reverse current VR = 50 V IR100 nA
VR = 50 V, Tj = 150 °C IR100 μA
Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD2.5 pF
Reverse recovery time IF = IR = (10 to 100) mA
iR = 0.1 x IR, RL = 100 trr 4ns
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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