A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIO NS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICBO VE = 28 V 2.0 mA
hFE VCE = 5.0 V IC = 200 mA 5 --- ---
COB VCB = 28 V f = 1.0 MHz 50 pF
10
50 13.5
60 dB
%
PG
η
ηη
ηC
ψ
ψψ
ψVCC = 28 V POUT = 30 W f = 150 MHz 30:1 minimum without degration in output power
NPN SILICON RF POWER TRANSISTOR
MRF314A
DESCRIPTION:
The MRF314A is Designed for Class
C Power Amplifier Applications up to
200 MHz.
FEATURES:
• PG = 10 dB min. at 30 W/ 150 MHz
• Withstands 30:1 Load VSWR
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC4.0 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 60 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 2.9 OC/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10770
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UN C -2A
C
B
EE
