CM1248-08DE - ON Semiconductor L.L.C.

February, 2011 − Rev. 4

1Publication Order Number:

CM1248−08DE/D

CM1248-08DE

Low Capacitance Transient

Voltage Suppressors / ESD

Protectors

Features

•Low I/O Capacitance at 10 pF at 0 V

•In−System ESD Protection to ±15 kV Contact Discharge,

per the IEC 61000−4−2 International Standard

•Compact SMT Package Saves Board Space and Facilitates Layout

in Space−Critical Applications

•Each I/O Pin Can Withstand over 1000 ESD Strikes

•These Devices are Pb−Free and are RoHS Compliant

MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

UDFN−8

DE SUFFIX

CASE 517BC

http://onsemi.com

CM1248−08DE uDFN−8

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

BLOCK DIAGRAM

CM1248−08DE

123

876

DAP

Note: DAP (Die Attach Pad)

is on back−side of chip.

L48 MG

L48 = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

CM1248−08DE

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Top View

8−Lead uDFN

CM1248−08DE

CH1 (1)

CH2 (2)

PACKAGE / PINOUT DIAGRAMS

CH3 (3)

CH4 (4)

CH8 (8)

CH7 (7)

CH6 (6)

CH5 (5)

Table 1. PIN DESCRIPTIONS

Pins Name Description

(Refer to package / pinout diagrams) CHx The cathode of the respective TVS diode, which should be connected to the node

requiring transient voltage protection.

(Refer to package / pinout diagrams) VNThe anode of the TVS diodes.

SPECIFICATIONS

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter Rating Units

Storage Temperature Range −65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 3. STANDARD OPERATING CONDITIONS

Parameter Rating Units

Operating Temperature −40 to +85 °C

Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol Parameter Conditions Min Typ Max Unit

CIN Channel Input Capacitance TA = 25°C, 0 VDC, 1 MHz 10 pF

0 VDC, 1 MHz 7 15 pF

DCIN Differential Channel I/O to GND Capacitance TA = 25°C, 2.5 VDC, 1 MHz 0.19 pF

VRSO Reverse Stand−off Voltage IR = 10 mA, TA = 25°C5.5 V

IR = 1 mA, TA = 25°C 6.1 V

ILEAK Leakage Current VIN = 5.0 VDC, TA = 25°C 0.25 mA

VIN = 5.0 VDC 0.75 mA

VSIG Small Signal Clamp Voltage

Positive Clamp

Negative Clamp

I = 10 mA, TA = 25°C

I = −10 mA, TA = 25°C

6.8

−0.89

VESD ESD Withstand Voltage

Contact Discharge per IEC 61000−4−2 standard

TA = 25°C

(Notes 2 and 3) ±15

RDDiode Dynamic Resistance

Forward Conduction

Reverse Conduction

TA = 25°C, IPP = 1 A, tP = 8/20 ms

0.57

1.36

1. All parameters specified at TA = −40°C to +85°C unless otherwise noted.

2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded.

3. These measurements performed with no external capacitor on CHX.

CM1248−08DE

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PERFORMANCE INFORMATION

Diode Capacitance

Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in Diode

Capacitance vs. Reverse Voltage.

Figure 1. Diode Capacitance vs. Reverse Voltage

Typical High Current Diode Characteristics

Measurements are made in pulsed mode with a nominal pulse width of 0.7 ms.

Figure 2. Typical Input VI Characteristics

(Pulse−mode Measurements, Pulse Width = 0.7 ms nominal)

CM1248−08DE

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PACKAGE DIMENSIONS

UDFN8, 1.7x1.35, 0.4P

CASE 517BC−01

ISSUE O

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL

AND IS MEASURED BETWEEN 0.15 AND

0.25 mm FROM THE TERMINAL TIP.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

ÉÉ

BOTTOM VIEW

0.10 B

0.05

K8X

NOTE 3

0.10 C

PIN ONE

REFERENCE

TOP VIEW

0.10 C

(A3)

0.05 C

CSEATING

PLANE

SIDE VIEW

8X 1

DIM MIN MAX

MILLIMETERS

A0.45 0.55

A1 0.00 0.05

A3 0.13 REF

b0.15 0.25

D1.70 BSC

D2 1.10 1.30

E1.35 BSC

E2 0.30 0.50

e0.40 BSC

K0.15 −−−

L0.20 0.30

DETAIL B

1.40

0.25

0.50

1.55

0.40 PITCH

DIMENSIONS: MILLIMETERS

0.40

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

PACKAGE

OUTLINE

L1 −−− 0.05

A1 A3

ÇÇ

ÉÉ

DETAIL B

MOLD CMPD

EXPOSED Cu

ALTERNATE

CONSTRUCTIONS

DETAIL A

NOTE 4

e/2

DETAIL A

ALTERNATE TERMINAL

CONSTRUCTIONS

RECOMMENDED

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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USA/Canada

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Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

CM1248−08DE/D

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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

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