2013. 7. 08 1/3
SEMICONDUCTOR
TECHNICAL DATA
BC546/7/8
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
·High Voltage : BC546 VCEO=65V.
·For Complementary With PNP Type BC556/557/558.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage
BC546
VCBO
80
VBC547 50
BC548 30
Collector-Emitter
Voltage
BC546
VCEO
65
VBC547 45
BC548 30
Emitter-Base
Voltage
BC546
VEBO
6
VBC547 6
BC548 5
Collector Current
BC546
IC
100
mABC547 100
BC548 100
Base Current
BC546
IB
20
mABC547 20
BC548 20
Emitter Current
BC546
IE
-100
mABC547 -100
BC548 -100
Collector Power Dissipation *PC
625
mW
400
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
2013. 7. 08 2/3
BC546/7/8
Revision No : 5
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CLASSIFICATION none A B C
hFE
BC546 110～450 110～220 200～450 -
BC547 110～800 110～220 200～450 420～800
BC548 110～800 110～220 200～450 420～800
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
DC Current Gain (Note)
BC546
hFE VCE=5V, IC=2mA
110 - 450
BC547 110 - 800
BC548 110 - 800
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 1.1 V
Base-Emitter Voltage
VBE(ON)1V
CE=5V, IC=2mA 0.58 - 0.7 V
VBE(ON)2V
CE=5V, IC=10mA - - 0.75 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz - 150 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - - 4.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA
Rg=10kΩ, f=1kHz - 1.0 10 dB
NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
2013. 7. 08 3/3
BC546/7/8
Revision No : 5
