MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML925B19F DESCRIPTION FEATURES ML9xx19 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1550nm. /4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML9xx19 can operate in the wide temperature range form 0C to 70C without any temperature control. /4 phase shifted grating structure Wide temperature range operation ( 0C to 70C ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 11GHz) APPLICATION 2.5Gbps long-haul transmission ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit CW 6 mW Conditions Po Output power IF Laser forward current - 200 mA VRL Laser reverse voltage - 2 V IRD PD forward current - 2 mA VRD Tc PD reverse voltage - 20 V Operation temperature - 0 ~ +70 C Storage temperature - -40 ~+100 C Tstg ELECTRICAL/OPTICAL CHARACTERISTICS Tc=25C Symbol Ith Iop Vop Parameter Limits Conditions Typ. Max. Unit CW - 15 30 CW,Tc=70C - 35 50 mA mA Operation current CW,Po=5mW - 40 70 60 100 mA mA Operating voltage CW,Po=5mW,Tc=70C CW,Po=5mW CW,Po=5mW 0.15 1.1 0.20 1.8 - V mW/mA Threshold current Slope efficiency Peak wavelength p SMSR Side mode suppression ratio Beam divergence angle (parallel) CW,Po=5mW,Tc=0C +70C 1530 1550 1570 CW,Po=5mW,Tc=0C +70C 35 - 45 - nm dB 25 40 deg. - 30 47 deg. - 11 - GHz - 100 150 psec 0.1 - 2.0 mA A CW,Po=5mW (perpendicular) CW,Po=5mW fr tr,tf Min. Resonance frequency Rise and fall time(10%-90%) 2.48832Gbps, Ibias=Ith,Ipp=40mA 2.48832Gbps, Ibias=Ith,Ipp=40mA not including package Im Id Monitoring current (PD) CW,Po=5mW,VRD=1V Dark current (PD) VRD=5V - - 1.0 Ct Capacitance (PD) VRD=5V,f=1MHz - 10 20 MITSUBISHI ELECTRIC pF MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE OUTLINE DRAWINGS ML925B19F mm 5.6 +0 -0.03 4.25 3.550.1 (0.25) (1) (4) (4) Case 0.250.03 Glass 10.1 PD LD 2.0Min. 1.270.03 1.0Min. 0.1 2.10.15 1.2 18 1 (3) (2) (0.25) 2-90 (3) Emitting Facet (2) Reference Plane ML725B16F ML925B19F 2.00.25 (P.C.D.) 4- 0.450.05 (1) (2) (1) MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPICAL CHARACTERISTICS Light output Po (mW) 10 8 6 0C 4 25C 2 70C 0 0 20 40 60 80 100 Forward current If (mA) Fig. 1 Light output v.s. forward current Relative intensity (dB) -30 Po=5mW,CW 0C -40 25C -50 70C -60 -70 -80 -90 1530 1540 1550 1560 1570 Forward current If (mA) Fig. 2 Spectrum Relative light output 1.2 // Po=5mW Tc=25C 1.0 0.8 0.6 0.4 0.2 0.0 -60 Fig. 3 Far field pattern -40 -20 0 Angle () 20 40 60