ML9xx19 SERIES
TYPE
NAME ML925B19F
MITSUBISHI LASER DIODES
2.5Gb
p
s InGaAsP DFB LASER DIODE
DESCRIPTION
ML9xx19 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1550nm.
/4 shifted grating structure is employed to obtain excellent SMSR
p
erformance under 2.5Gbps modulation. Furthermore, ML9xx19 can
operate in the wide temperature range form 0ºC to 70ºC without any
temperature control.
FEATURES
2.5Gbps long-haul transmission
APPLICATION
ABSOLUTE MAXIMUM RATINGS
/4 phase shifted grating structure
High side-mode-suppression-ratio (typical 45dB)
Wide temperature range operation
( 0ºC to 70ºC )
High resonance frequency (typical 11GHz)
ELECTRICAL/OPTICAL CHARACTERISTICS Tc=25ºC
Threshold current
Operation current
Operating voltage
Peak wavelength
Beam divergence angle (parallel)
(perpendicular)
Side mode suppression ratio
Monitoring current (PD)
Rise and fall time(10%-90%)
S
y
mbol Parameter Conditions Min. Typ. Max. Unit
Ith CW -1530mA
Io
p
CW,Po=5mW -40 60 mA
V
Vo
p
CW,Po=5mW 1.1 1.8
pCW,Po=5mW,Tc=0ºC +70ºC 1550 nm
CW,Po=5mW
-
25
47
deg.
CW,Po=5mW,VRD=1V
-11 -
20
-
SMSR
fr 2.48832Gbps, Ibias=Ith,Ipp=40mA
40
-
30 deg.
35 45
pF
Resonance frequency
tr,t
f
2.0 mA
dB
150
GHz
1530 1570
-
Limits
mA
CW,Tc=70ºC
CW,Po=5mW,Tc=70ºC
CW,Po=5mW
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
Im
Id
Ct Capacitance (PD)
VRD=5V
VRD=5V,f=1MHz
-35 50
-70 100 mA
mW/mA0.200.15 -
CW,Po=5mW
100
-psec
0.1 -
1.0 A
CW,Po=5mW,Tc=0ºC +70ºC
-
-
10
-
Slope efficiency
Dark current (PD)
Symbol Parameter Conditions Ratings Unit
IF Laser forward current 200 mA
VRL Laser reverse voltage -2V
Tc Operation temperature -0~+70
Tstg Storage temperature --40 ~+100 ºC
ºC
VRD - 20 V
Po Output powe
r
CW 6mW
PD reverse voltage
IRD PD forward current -2mA
-
MITSUBISHI
ELECTRIC
ML725B16F
LDPD
(3)
(2) (1)
(4)
Case
(1)
1.0Min.
2.0Min.
3.55±0.1
5.6 +0
-0.03
1.27±0.03
0.25±0.03
Glass
18 ±1 2.1±0.15
1.2
±0.1
4- 0.45±0.05
(2)
1±0.1
2-90
2.0±0.25
(P.C.D.)
4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
mm
OUTLINE DRAWINGS
ML925B19F
ML9xx19 SERIES
MITSUBISHI LASER DIODES
2.5Gb
p
s InGaAsP DFB LASER DIODE
ML925B19F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-60 -40 -20 0 20 40 60
Angle (°)
Relative light output
θ⊥
θ//
Po=5mW
Tc=25°C
-90
-80
-70
-60
-50
-40
-30
1530 1540 1550 1560 1570
Forward current If (mA)
Relative intensity (dB)
0°C
25°C
70°C
Po=5mW,CW
0
2
4
6
8
10
0 20 40 60 80 100
Forward current If (mA)
Light output Po (mW)
0°C
25°C
70°C
ML9xx19 SERIES
MITSUBISHI LASER DIODES
2.5Gbps InGaAsP DFB LASER DIODE
TYPICAL CHARACTERISTICS
Fig. 1 Light output v.s. forward current
Fig. 2 Spectrum
Fig. 3 Far field pattern