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KSC2383 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2383 Rev. 1.1.0
October 2014
KSC2383
NPN Epitaxial Silicon Transistor
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
KSC2383OTA C2383 O- TO-92 3L Ammo
KSC2383YTA C2383 Y- TO-92 3L Ammo
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 1 A
IBBase Current 0.5 A
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to +150 °C
TO-92L
1
1. Emitter 2. Collector 3. Base
KSC2383 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2383 Rev. 1.1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 900 mW
Derate Above 25°C7.2mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 138 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current VCB = 150 V, IE = 0 1 μA
IEBO Emitter Cut-Off Current VEB = 6 V, IC = 0 1 μA
BVCEO Collector-Emitter Brea kdown Voltage IC = 10 mA, IB = 0 160 V
hFE DC Current Gain VCE = 5 V, IC = 200 mA 60 320
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 1.5 V
VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 5 mA 0.45 0.75 V
fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 200 mA 20 100 MHz
Cob Output Capa citance VCB = 10 V, IE = 0,
f = 1 MHz 20 pF
Classification R O Y
hFE 60 ~ 120 100 ~ 200 160 ~ 320
KSC2383 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2383 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
0.00.20.40.60.81.01.21.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IB = 10mA
EMITTER CO M M O N
Ta=25oC
IB = 0.5mA
IB = 1mA
IB = 15m A
IB = 6 m A
IB = 4mA
IB = 3mA
IB = 2.5mA
IB = 2mA
IB = 1.5mA
Ic[mA], COLLECTOR C URREN T
VCE[V ], C OLLECT O R-EMITTE R VOLTA GE
10 100 1000
1
10
100
1000
VCE=5V
VCE=10V
EMITTER COMMO N
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
100 1000
10
100
1000
VCE=1V
VCE=5V
VCE=10V
EMITTER COMMO N
Ta = 25oC
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
1E-3
0.01
0.1
1
IC/IB=5
EMITTER COMMON
Ta = 25oC
IC/IB=10
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.00.20.40.60.81.0
0.0
0.2
0.4
0.6
0.8
1.0 EMITTER COMMON
IC/IB=10
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000 EMITTER COMMON
f = 1MHz
Ta = 25oC
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
KSC2383 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2383 Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area
1 10 100 1000
1
10
100
1000 EMITTER COMMON
Ta = 25oC
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
1 10 100 1000
1E-3
0.01
0.1
1
10
VCEO MAX.
DC T
a
=25
o
C
I
C
MAX.=1A
100ms
10ms
IC MAX. (Pulse)
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
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1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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