BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage Vdc 45 60 80 VEBO 5.0 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1 800 12 mW mW/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range TJ, Tstg Semiconductor Components Industries, LLC, 2001 June, 2000 - Rev. 3 2 3 TO-92 (TO-226AA) CASE 29 STYLE 14 ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 3 BASE Vdc 1 Device Package Shipping BC635RL1 TO-92 2000/Tape & Reel BC635ZL1 TO-92 2000/Ammo Pack BC637 TO-92 5000 Units/Box BC639 TO-92 5000 Units/Box BC639RL1 TO-92 2000/Tape & Reel BC639ZL1 TO-92 2000/Ammo Pack BC639-16ZL1 TO-92 2000/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639, BC639-16 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 60 80 -- -- -- -- -- -- 120 -- -- 45 60 80 -- -- -- -- -- -- 5.0 -- -- Vdc -- -- -- -- 100 10 nAdc Adc 25 40 40 40 100 25 -- -- -- -- -- -- -- 250 160 160 250 -- OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (IC = 10 Adc, IB = 0) V(BR)CEO BC635 BC637 BC639 Collector-Emitter Zero-Gate Breakdown Voltage (1) (IC = 100 Adc, IB = 0) BC639-16 V(BR)CES Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO BC635 BC637 BC639 Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) Vdc Vdc Vdc ICBO ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 BC639-16ZLT1 (IC = 500 mA, VCE = 2.0 V) -- Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) -- -- 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) -- -- 1.0 Vdc fT -- 200 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 7.0 -- pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 50 -- pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 BC635, BC637, BC639, BC639-16 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25C 100 50 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 PD TC 25C 20 10 5 1 BC635 BC637 BC639 PD TA 25C PD TC 25C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 1 Figure 3. Current-Gain -- Bandwidth Product 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. "Saturation" and "On" Voltages -0.2 V, TEMPERATURE COEFFICIENTS (mV/C) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 -1.0 VCE = 2 VOLTS T = 0C to +100C -1.6 -2.2 V for VBE 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 3 1000 1000 BC635, BC637, BC639, BC639-16 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 BC635/D