MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * * * * * * * * * Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) * * * SOT23 Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish--Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) C B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product MMBT3906-7-F MMBT3906Q-7-F MMBT3906Q-13-F MMBT3906-13-F Notes: Status Active Active Active Active Compliance AEC-Q101 Automotive Automotive AEC-Q101 Marking K3N K3N K3N K3N Reel Size (inches) 7 7 13 13 Tape Width (mm) 8 8 8 8 Quantity per Reel 3000 3000 10,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 MMBT3906 Document number: DS30059 Rev. 21 - 2 YM K3N K3N = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E= 2017) M or M = Month (ex: 9 = September) 2017 E Mar 3 Apr 4 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H 2021 I 2022 J Aug Sep Oct Nov Dec 8 9 O N D June 2018 (c) Diodes Incorporated MMBT3906 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM IBM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Value -40 -40 -6.0 -200 -200 -100 Unit V V V mA mA mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RJA RJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge--Human Body Model Electrostatic Discharge--Machine Model Notes: Symbol ESD HBM ESD MM Value 4000 400 Unit V V JEDEC Class 3A C 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; the device is measured under still air conditions while operating in a steady-state. 7. Same as Note 6 except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT3906 Document number: DS30059 Rev. 21 - 2 2 of 7 www.diodes.com June 2018 (c) Diodes Incorporated MMBT3906 Thermal Characteristics and Derating Information 400 Thermal Resistance (C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (C) 350 300 250 200 D=0.5 150 D=0.1 Single Pulse 100 D=0.2 50 0 100 1m D=0.05 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. Tamb=25C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT3906 Document number: DS30059 Rev. 21 - 2 3 of 7 www.diodes.com June 2018 (c) Diodes Incorporated MMBT3906 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO -40 -40 -6.0 -50 -50 -50 V V V nA nA nA hFE 60 80 100 60 30 300 Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.40 V Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 -0.95 V Cobo Cibo hie hre hfe hoe 2.0 0.1 100 3.0 4.5 10 12 10 400 60 pF pF k x 10-4 S Current Gain-Bandwidth Product fT 250 MHz Noise Figure NF 4.0 dB td tr ts tf 35 35 225 75 ns ns ns ns Collector Cutoff Current ICEV Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 10) IEBO DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Note: Test Condition IC = -100A, IE = 0 IC = -10mA, IB = 0 IE = -100A, IC = 0 VCE = -30V, VBE = 3.0V VCE = -30V, VBE = -0.25V VEB = -5V IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100A, RS = 1.0k, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT3906 Document number: DS30059 Rev. 21 - 2 4 of 7 www.diodes.com June 2018 (c) Diodes Incorporated MMBT3906 Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current 10 0.1 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000 100 IC IB = 10 1 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 0.1 1 TA = -25C TA = 125C TA = 25C TA = 75C 0.1 0.1 10 1,000 1 100 IC, COLLECTOR CURRENT (mA) Figure 3 Typical Base-Emitter Saturation Voltage vs. Collector Current MMBT3906 Document number: DS30059 Rev. 21 - 2 10 5 of 7 www.diodes.com 1 0.1 1 100 10 VR, REVERSE VOLTAGE (V) Figure 4 Typical Capacitance Characteristics June 2018 (c) Diodes Incorporated MMBT3906 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X MMBT3906 Document number: DS30059 Rev. 21 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com June 2018 (c) Diodes Incorporated MMBT3906 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com MMBT3906 Document number: DS30059 Rev. 21 - 2 7 of 7 www.diodes.com June 2018 (c) Diodes Incorporated