42814TKIM/82907TIIM TC-00000808 PE No.A0926- 1/5
Semiconductor Components Industries, LLC, 2014
April, 2014
http://onsemi.com
1HP04CH
Features
4V drive Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Conditions Value Unit
Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS 20 V
Drain Current (DC) ID 170 mA
Drain Current (Pulse) IDP PW10s, duty cycle1% 680 mA
Power Dissipation PD When mounted on ceramic substrate (900mm2
0.8mm) 0.6 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient RJA 208 C /W
When mounted on ceram i c substrate (90 0mm
2
0.8mm)
Electrical Characteristics at Ta 25C
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=1mA, VGS=0V 100 V
Zero-Gate Voltage Drain Current IDSS V
DS=100V, VGS=0V 1A
Gate to Source Leakage Current IGSS V
GS=±16V, VDS=0V
10 A
Gate Threshold Voltage VGS(th) VDS=10V, ID=100A 1.2 2.6 V
Forward Transconductance gFS V
DS=10V, ID=80mA 170 mS
Static Drain to Source On-State Resistance
RDS(on)1 ID=80mA, VGS=10V 12.5 18
RDS(on)2 ID=40mA, VGS=4V 14 21
Input Capacitance Ciss
VDS=20V, f=1MHz
14 pF
Output Capacitance
Coss 2.8 pF
Reverse Transfer Capacitance
Crss 0.9 pF
Continued on next page.
Orderin
g
numbe
r
: EN*A0926A
P-Channel Small Signal MOSFET
100V,
170mA, 18
, Single CPH3
This document contains information on a new product. Specifications and info rmation
herein are subject to change without notice.
ORDERING INFORMATION
See detailed orderin
g
and shi
pp
in
g
information on
p
a
g
e 2 of this data shee
t
.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Advance Information
1HP04CH
No.A0926-2/5
Continued from preceding page.
Parameter Symbol Conditions Value Unit
min typ max
Turn-ON Delay Time td(on)
See specified Test Circuit
21 ns
Rise Time tr 18 ns
Turn-OFF Delay Time td(off) 200 ns
Fall Time tf 81 ns
Total Gate Charge Qg
VDS=50V, VGS=10V, ID=170mA
0.9 nC
Gate to Source Charge Qgs 0.14 nC
Gate to Drain “Miller” Charge Qgd 0.27 nC
Forward Diode Voltage VSD I
S=170mA, VGS=0V 0.88 1.2 V
Ordering & Package Information Packing Type:TL Marking
Device Package
Shipping note
1HP04CH-TL-W
CPH3, SC-59
SOT-23, TO-236 3,000
pcs. / reel
Pb-Free
and
Halogen Free
Electrical Connection Switching Time Test Circuit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
1HP04CH
No.A0926-3/5
1HP04CH
No.A0926-4/5
1HP04CH
PS No.A0926-5/5
Package Dimensions
1HP04CH-TL-W
CPH3
CASE 318BA
ISSUE O
unit : mm
1: Gate
2: Source
3: Drain
Recommended Soldering
Footprint
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Note on usage : Since the 1HP04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
0.6
2.4
0.95 0.95
1.4
