NBB-500-E - RF Micro Devices

4-49

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT

Si Bi-CMOS SiGe HBT Si CMOS

InGaP/HBT GaN HEMT SiGe Bi-CMOS

RF OUTRF IN

GND

MARKING - N5

NBB-500

CASCADABLE BROADBAND

GaAs MMIC AMPLIFIER DC TO 4GHz

• Narrow and Broadband Commercial and

Military Radio Designs

• Linear and Saturated Amplifiers

• Gain Stage or Driver Amplifiers for

MWRadio/Optical Des igns (PTP/PMP/

LMDS/UNII/VSAT/WLAN/Cellular/DWDM)

The NBB-500 cascadable broadband InGaP/GaAs MMIC

amplifier is a low-cost, high-perf ormance solution for gen-

eral purpose RF and micro wa ve amplifi cat ion ne eds . This

50Ω gain block is based on a reliable HBT proprietary

MMIC design, providing unsurpassed performance for

small-signal applications. Designed with an external bias

resistor, the NBB-500 provides flexibility and stability. The

NBB-500 is packaged in a low-cost, surface-mount

ceramic package, providing ease of assembly for high-

volume tape-and-reel requirements. It is available in

either packaged or chip (NBB-500-D) form, where its gold

metallization is ideal for hybrid circuit designs.

• Reliable, Low-Cost HBT Design

• 19.0dB Gain, +12.3dBm P1dB@2GHz

• High P1dB of +14.0dBm@6.0GHz

• Single Power Supply Operation

•50Ω I/O Matched for High Freq. Use

NBB-500 Cascadabl e Broadb and GaAs M MIC Amplifier DC to

4GHz

NBB-500-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NBB-500-D NBB-500 Chip Form (100 pieces minimum order)

NBB-500-E Fully Assembled Evaluation Board

NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit

Rev A4 030912

UNITS:

Inches

(mm)

0.070

(1.78)

0.040

(1.02)

0.020

0.200 sq.

(5.08)

45° 0.055

(1.40)

0.005

(0.13)

Package Style: Micro-X, 4-Pin, Ceramic

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Absolute Maximum Ratings

Parameter Rating Unit

RF Input Power +20 dBm

Power Dissipation 300 mW

De vice Current 70 mA

Channel Temperature 200 °C

Operating Temperature -45 to +85 °C

Storage Temperature -65 to +150 °C

Exceeding any one or a combination of these limits may cause permanent damage.

Parameter Specification Unit Condition

Min. Typ. Max.

Overall VD=+3.9V, ICC=35mA, Z0=50Ω, TA=+25°C

Small Signal Power Gain, S21 19.0 20.5 dB f=0.1GHz to 1.0GHz

19.5 dB f=1.0GHz to 2.0GHz

16.0 18.5 dB f=2.0GHz to 4.0GHz

Gain Flatness, GF ±0.8 dB f=0.1GHz to 3.0GHz

Input and Output VSWR 1.70:1 f=0.1GHz to 4.0GHz

1.45:1 f=4.0GHz to 6.0GHz

1.65:1 f=6.0GHz to 10.0GHz

Bandwidth, BW 4.2 GHz BW3 (3dB)

Output Power @

-1dB Compression, P1dB 12.3 dBm f=2.0GHz

14.0 dBm f=6.0GHz

Noise Figure, NF 3.2 dB f=3.0GHz

Third Order Intercept, IP3 +26.5 dBm f=2.0GHz

Reverse Isolation, S12 -17.0 dB f=0.1GHz to 10.0GHz

De vice Voltage, VD 3.6 3.9 4.2 V

Gain Temperature Coefficient,

δGT/δT-0.0015 dB/°C

MTTF versus Temperature

@ ICC=35mA

Case Temperature 85 °C

Junction Temperature 120 °C

MTTF >1,000,000 hours

Thermal Resistance

θJC 256 °C/W JTTCASE

–

VDICC

⋅

---------------------------θJC °CWatt⁄()=

Caution! ESD sensitive device.

RF Micro Devices belie v es the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices doe s not

assume respon sibility for the use of the described product(s ).

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NBB-500

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Pin Function Description Interface Schematic

1RF IN

RF input pin. This pin is NOT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in

most applications. DC coupling of the input is not allowed, because this

will override the internal feedback loop and cause temperature instabil-

ity.

2GND

Ground connection. For best performance, keep traces physically short

and connect immediately to ground plane.

3RF OUT

RF output and bias pin. Biasing is accomplished with an external series

resistor and choke inductor to VCC. The resistor is selected to set the

DC current into this pin to a desired level. The resistor value is deter-

mined by the following equation:

Care should also be taken in the resistor selection to ensure that the

current into the part never exceeds maximum datasheet operating cur-

rent over the planned operating temperature. This means that a resistor

between the supply and this pin is always required, even if a supply

near 5.0V is available, to provide DC feedback to prevent thermal run-

away. Because DC is present on this pin, a DC blocking capacitor, suit-

able for the frequency of operation, should be used in most

applications. The supply side of the bias network should also be well

bypassed.

4GND

Same as pin 2.

VCC VDEVICE

–()

ICC

-------------------------------------------

RF OUT

RF IN

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NBB-500

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Typical Bias Configuration

Application notes related to biasing circuit, device footprint, and ther mal considerations are available on request.

Recommended Bias Resistor Values

Supply Voltage, VCC (V)5 8 10121520

Bias Resistor, RCC (Ω) 31 117 174 231 317 460

C block

1 3

2VDEVICE

C block

In Out

L choke

(optional)

RCC

VCC

VD = 3.9 V

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NBB-500

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Chip Outline Drawing - NBB-500-D

Chip Dimensions: 0.017” x 0.017” x 0.004”

Sales Criteria - Unpackaged Die

Die Sales Information

• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die materi al shall be nego-

tiated on a case-by-case basis.

• Segmented die are sele cted for customer shipment in accordance with RFMD Docume nt #6000152 - Die Product

Final Visual Inspection Criteria1.

• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 40 0 die per carrier is allow-

able.

Die Packa ging

• All die are packaged in GelPak ESD protective containers with the following specification:

O.D.=2"X2", Capacity=400 Die (20X20 s egments), Retention Level=High(X8).

• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is

opened the GelPak/s should be stored in a co ntrolled nitrogen environment. Do not press on the cove r of a closed

GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.

• Precaution must be taken to minimize vibration of packaging during handling, as die can sh ift during transit 2.

Package Storage

• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.

• Precaution must be taken to minimize vibration of packaging during handling, as die can sh ift during transit2.

Die Handling

• Proper ESD precautions must be taken when handling die material.

• Die should be handled usin g vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-

zers. Do not touch die with any part of the body.

• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force

may damage GaAs devices.

INPUTOUTPUT

GND

VIA

0.017 ± 0.001

(0.44 ± 0.03)

0.017 ± 0.0 01

(0.44 ± 0.03) 0.004 ± 0.001

(0.10 ± 0.03)

UNITS:

Inches

(mm) Back of chip is ground.

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Die Attach

• The die attach pr ocess mechanically atta ches the die to the circuit sub strate . In addition, the utili zation of proper die

attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the

thermal path by which heat can leave the chip.

• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment meth-

ods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure

involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-

strate.

• All connections should be made on the topside of the die. It is essential to performance that the backside be well

grounded and that the length of topside interconnects be minimized.

• Some die utilize vias f or eff ectiv e grounding. Care must be e x ercised when mounting die to preclude excess run-out

on the topside.

Die Wire Bonding

• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-

able practices for wire bonding.

• All bond wires should be made as short as possible.

Notes

1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die

inspection personnel to deter mine final visual acceptance of die product prior to shipping to customers.

2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to min-

imize material shift. However, due to the physical size of die-level produ ct, RFMD does not guarantee that mater ial will

not shift dur ing transit, especially under extreme handling circumstances. Product replac ement due to mater ial shift will

be at the discretion of RFMD.

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Extended Frequency InGaP Amplifier Designer’s Tool Kit

NBB-X-K1

This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.

Each tool kit contains the following.

• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers

• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers

• 2 Broadband Evaluation Boards and High Frequency SMA Connectors

• Broadband Bias In structions and Specification Summary Index for ease of operation

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NBB-500

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Tape and Reel Dimensions

All Dimensions in Millimeters

FLANGE B

330 +0.25/-4. 0

18.4 MAX

12.4 +2.0

Diameter

Thickness

Space Between Flange

13.0 +0.079/-0.158

0.724 MAX

0.488 +0.08

HUB

102.0 REF

13.0 +0.5/-0.2

1.5 MIN

Outer Diameter

Spindle Hole Diameter

Key Slit Width D20.2 MINKey Slit Diameter

4.0 REF

0.512 +0.020/-0.008

0.059 MIN

0.795 MIN

330 mm (13") REEL Micro-X, MPGA

SYMBOL SIZE (mm)ITEMS SIZE (inches)

LEAD 1

User Direction of Feed

Ao = 7.0 MM

A1 = 1.45 MM

Bo = 7.0 MM

B1 = 0.9 MM

Ko = 2.0 MM

NOTES:

1. 10 sprocket hole pitch cumulative tolerance ±0.2.

2. Camber not to exceed 1 mm in 100 mm.

3. Material: PS+C

4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.

5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.

6. Pock et po sition relative to s p rocket hole m easured as true position of pocket, not pocket hole.

SECTION A-A 8.0

Ao A1

2.5

5.0 MIN.

2.00 ± 0.05

SEE NOTE 6

4.0

SEE NOTE 1

R0.3 MAX.

0.30

± 0.05

All dimensions in mm 5.0 +0.1

-0.0 B1

12.0

± 0.3

5.50 ± 0.05

SEE NOTE 6

1.75

R0.3 TYP.Ko

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Device Voltage versus Amplifier Current

3.85

3.90

3.95

4.00

20.00 25.00 30.00 35.00 40.00 45.00 50.00

Ampl ifi er Current, ICC (mA)

Device Voltage, VD (V)

P1dB versus Frequency at 25°C

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

1.0 2.0 3.0 4.0 5.0 6.0

Fre quency (GHz)

P1dB (dBm)

POUT/Gain versus PIN at 2 GHz

0.0

5.0

10.0

15.0

20.0

25.0

-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0

PIN (dBm)

POUT (dBm), Gain (dB)

Pout ( d Bm )

Gain (dB)

POUT/Gain versus PIN at 6 GHz

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0

PIN (dBm)

POUT (dBm), Gain (dB)

Pout ( d Bm )

Gain (dB)

Third Order Intercept versus Frequency at 25°C

0.0

5.0

10.0

15.0

20.0

25.0

30.0

1.0 2.0 3.0 4.0 5.0 6.0

Fr equency (GHz)

Output IP3 (dBm)

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NBB-500

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Note: The s-parameter gain results shown below include device perfor mance as well as evaluation board and connector

loss variations. The insertion losses of the evaluation board and connectors are as follows:

1GHz to 4GHz=-0.06dB

5GHz to 9GHz=-0.22dB

10GHz to 14GHz=-0.50dB

15GHz to 20GHz=-1.08dB

S11 versus Frequency, Over Temperature

-40.0

-35.0

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Fre quency (GHz)

S11 (dB)

+25 C

-40 C

+85 C

S12 versus Frequency, Over Temperature

-40.0

-35.0

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Fr equency (GHz)

S12 (dB)

+25 C

-40 C

+85 C

S21 versus Frequency, Over Temperature

-40.0

-30.0

-20.0

-10.0

0.0

10.0

20.0

30.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Fre quency (GHz)

S21 (dB)

+25 C

-40 C

+85 C

S22 versus Frequency, Over Temperature

-40.0

-35.0

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Fr equency (GHz)

S22 (dB)

+25 C

-40 C

+85 C