R07DS0636EJ0100 Rev.1.00 Page 1 of 8
Jan 16, 2012
Preliminary Datasheet
CR04AM-12A
Thyristor
Low Power Use
Features
IT (AV) : 0.4 A
VDRM : 600 V
IGT: 100 A
Planar Type
Outline
2
1
3
PRSS0003EA-A
(Package name: TO-92*)
RENESAS Package code:
1. Cathode
2. Anode
3. Gate
31
2
PRSS0003DE-A
(Package name: TO-92(3))
31
2
Applications
Solid state relay, igniter, strobe flasher, circuit breaker, and general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak reverse voltage VRRM 600 V
Non-repetitive peak reverse v oltag e VRSM 720 V
DC reverse voltage VR(DC) 480 V
Repetitive peak off-state voltage Note1 V
DRM 600 V
DC off-state voltage Note1 V
D(DC) 480 V
Notes: 1. With gate to cathode resistance RGK=1 k
R07DS0636EJ0100
Rev.1.00
Jan 16, 2012
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 2 of 8
Jan 16, 2012
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT(RMS) 0.63 A
Average on-state current IT(AV) 0.4 A
Commercial frequency, sine half wave
180 conduction, Ta=54C
Surge on-state current ITSM 10 A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
I2t for fusing I2t 0.4 A2s Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG(AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +125 C
Storage temperature Tstg – 40 to +125 C
Mass — 0.23 g Typical value
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.5 mA Tj = 125C, VRRM applied
Repetitive peak off-state current IDRM — — 0.5 mA Tj = 125C, VDRM applied
RGK=1 k
On-state voltage VTM — — 1.2 V Tj = 25C, ITM = 1.2 A
instantaneous value
Gate trigger voltage VGT — — 0.8 V Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM
RGK=1 K
Gate trigger current IGT 1
Note2 — 100Note2 μA Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Holding current IH — 1.5 3 mA Tj = 25°C, VD = 12 V, RGK=1 k
Thermal resistance Rth(j-a) — — 150 C/W Junction to ambient
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item A B C D E
IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60Ω
V
GT
21
TUT
1kΩ
R
GK
A3 A2 V1
A1
Switch
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 3 of 8
Jan 16, 2012
Performance Curves
4
2
6
8
10
0
5
01234
102
101
100
100101102
10−1
102
101
100
10−2
10−210−1100
10−2
10−310−1100
101102
100101102103
10−1
Ta = 25°C
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
I
GT
= 100μA
(Tj = 25°C)
V
GD
= 0.2V
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Characteristics
V
FGM
= 6V P
GM
= 0.5W
V
GT
= 0.8V
(Tj = 25°C) P
G(AV)
= 0.1W
I
FGM
= 0.3V
10
3
10
2
10
1
10
0
10
3
10
2
10
1
10
0
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
×
100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
160
0 40 80 120
–40
Typical Example
1.0
0.8
0.6
0.4
0120–40 –20 20 80
0.2
600 40 100
Distribution
Typical Example
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 4 of 8
Jan 16, 2012
θ = 30°
60° 120°
90° 180°
θ = 30°60° 120°
90° 180°
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
160
120
60
40
20
140
100
80
0
θ = 30° 120°
180° DC
270°60°
90°
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
00.80 0.2 0.4 0.6 0.70.1 0.3 0.5
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
00.80 0.2 0.4 0.6 0.70.1 0.3 0.5
0.80 0.2 0.4 0.6 0.70.1 0.3 0.5
0.80 0.2 0.4 0.6 0.70.1 0.3 0.5
θ = 30° 60° 120°
90° 180°
270°
DC
160
120
60
40
20
140
100
80
0
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
00.80 0.2 0.4 0.6 0.70.1 0.3 0.5 0.80 0.2 0.4 0.6 0.70.1 0.3 0.5
160
120
60
40
20
140
100
80
0
θ = 30° 60° 120°90° 180°
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Ambient Temperature (°C)Ambient Temperature (°C)Ambient Temperature (°C)
Average On-State Current (A)
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
θ θ
360°
Resistive loads
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
θ
360°
Resistive,
inductive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
Natural convection
θ = 30°
60° 120°
90°
180°
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 5 of 8
Jan 16, 2012
160
120
60
40
20
140
100
80
0160
–4004080120
Typical Example
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
R
GK
= 1kΩ
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Breakover Voltage (R
GK
= rkΩ)
Breakover Voltage (R
GK
= 1kΩ)
0
80
100
120
40
60
20
Typical Example
Tj = 125°C
10
−1
10
0
10
1
10
2
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/μs)
× 100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
160
0
80
100
120
140
40
60
20
Tj = 125°C
R
GK
= 1kΩ
Typical Example
10
0
10
1
10
2
10
3
10
1
10
0
10
−1
10
−2
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
60 8002040–20–40100 120 140
R
GK
= 1kΩ
I
GT
(25°C) = 35μA
Typical Example
Distribution
10
−1
10
0
10
1
10
2
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (R
GK
= rkΩ)
Holding Current (R
GK
= 1kΩ)
600
500
0
300
400
100
200
Typical Example
Tj = 125°C
10
2
10
1
10
0
10
−1
10
0
10
1
10
2
10
−1
Typical Example
Turn-On Time vs.
Gate Current
Turn-On Time (μs)
Gate Current (mA)
V
D
= 100V
R
L
= 47Ω
R
GK
= 1kΩ
Ta = 25°C
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 6 of 8
Jan 16, 2012
40
30
15
10
5
35
25
20
01600408012014020 60 100
Distribution
Turn-Off Time vs.
Junction Temperature
Turn-Off Time (μs)
Junction Temperature (°C)
V
D
= 50V, V
R
= 50V
I
T
= 2A, R
GK
= 1kΩ
160
120
100
40
60
20
0
–400 4080120
160
80
140
Junction Temperature (°C)
×
100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example
104
103
102
100101102103
101
Gate Trigger Current vs.
Gate Current Pulse Width
×
100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Current Pulse Width (μs)
Typical Example
V
D
= 6V
R
L
= 60Ω
Ta = 25°C
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 7 of 8
Jan 16, 2012
Package dimensions
SC-43A 0.23g
MASS[Typ.]
T920PRSS0003EA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
φ5.0Max
4.4
3.6
11.5Min 5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Package Name
TO-92*
0.60 Max
0.55 Max
4.8 ± 0.33.8 ± 0.3
5.0 ± 0.2
0.72.3 Max
12.7 Min
0.42 Max
1.27
2.54
Previous Code
TO-92(3)/TO-92(3)VSC-43A PRSS0003DE-AMASS[Typ.]
0.23g
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
TO-92(3)
CR04AM-12A Preliminary
R07DS0636EJ0100 Rev.1.00 Page 8 of 8
Jan 16, 2012
Ordering Information
Orderable Part Number Packing Quantity Remark
CR04AM-12A#B00 Bag 500 pcs. Straight Type, TO-92*
CR04AM-12A-B#B00 Bag 500 pcs. Straight Type, TO-92*, IGT item:B
CR04AM-12A-A6#B00 Bag 500 pcs. A6 Lead form, TO-92*
CR04AM-12A-BA6#B00 Bag 500 pcs. A6 Lead form, TO-92*, IGT item:B
CR04AM-12A-TB#B00 Adhesive Tape 2000 pcs. A8 Lead form, TO-92*
CR04AM-12A-BTB#B00 Adhesive Tape 2000 pcs. A8 Lead form, TO-92*, IGT item:B
CR04AM-12A#B10 Bag 500 pcs. Straight Type, TO-92(3)
CR04AM-12A-B#B10 Bag 500 pcs. Straight Type, TO-92(3), IGT item:B
Note : Please confirm the specification about the shipping in detai l.
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