BC107/BC108 Series
Low Power Bipolar Transistors
Page 1 20/04/06 V1.0
Feature:
••NPN Silicon Planar Epitaxial Transistors.
TO-18 Metal Can Package
Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
General Purpose Amplifier/Switches
BC107/BC108 Series
Low Power Bipolar Transistors
Page 2 20/04/06 V1.0
Absolute Maximum Ratings
Description Symbol BC107 BC108 Unit
Collector-Emitter Voltage VCEO 45 25
VCollector-Base Voltage VCBO 50 30
Emitter-Base Voltage VEBO 6.0 5.0
Collector Current Continuous IC0.2 A
Power Dissipation at Ta= 25°C
Derate above 25°C PD
0.6
2.28 W
mW/°C
Power Dissipation at TC = 25°C
Derate above 25°C
1.0
6.67
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance
Junction to Case Rth (j-c) 175 °C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Maximum Unit
Collector-Emitter Voltage VCEO
IC = 2mA, IB = 0 BC107
BC108
45
25 -
V
Emitter-Base Voltage VEBO
IE = 10µA, IC= 0 BC107
BC108
6.0
5.0 -
Collector-Cut off Current ICBO
VCB = 45V, IE = 0 BC107
VCB = 25V, IE = 0 BC108
Tamb = 125°C
VCB = 45V, IE = 0 BC107
VCB = 25V, IE = 0 BC108
-
15
15
4.0
4.0
nA
µA
DC Current hFE
IC = 10µA, VCE = 5V
B Group
C Group
IC = 2mA, VCE = 5V
BC 107
BC 108
A Group
B Group
C Group
40
100
110
110
110
200
420
-
-
450
800
220
450
800
-
Base Emitter Saturation Voltage VBE (Sat) IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
-0.83
1.05
V
Collector Emitter Saturation Voltage VCE (Sat) -0.25
0.60
Base Emitter On Voltage VBE (on)
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
0.55
-
0.70
0.77
BC107/BC108 Series
Low Power Bipolar Transistors
Page 3 20/04/06 V1.0
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Description Symbol Test Condition Minimum Maximum Unit
Collector Knee Voltage VCE (K)
IC = 10mA, IB = The value for
which IC = 11mA
at VCE = 1V
-0.60 V
Transition Frequency ft
VCE = 5V, IC = 10mA,
f = 100MHz 150 - MHz
Noise Figure NF
VCE = 5V, IC = 0.2mA
Rg= 2kΩ
F = 1kHz,B = 200Hz
10 dB
Output Capacitance Cobo VCB = 10V, f = 1MHz - 4.5 pF
Small Signal Current Gain hfe
ALL f = 1kHz
IC = 2mA, VCE = 5V
BC 107
BC 108
A Group
B Group
C Group
125
125
125
240
450
500
900
260
500
900
-
Input Impedance hie
IC = 2mA, VCE = 5V
A Group
B Group
C Group
1.6
3.2
6.0
4.5
8.5
15
KΩ
KΩ
Output Admittance hoe
IC = 2mA, VCE = 5V
A Group
B Group
C Group
-30
60
110
umhos
Specifications
VCEO
(V)
VCBO
maximum
(V)
IC
(A)
hFE
minimum
at IC = 2mA
fT
minimum
(*Typical)
(V)
Ptot
(mW) Type Package Part Number
45 50
0.1
110
150
600
NPN TO-18
BC107
BC107A
200 BC107B
20 30
110
300 BC108
600
BC108B
200 BC108C
For enquiries from all other markets
BC107/BC108 Series
Low Power Bipolar Transistors
Page 4 20/04/06 V1.0
Notes:
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export
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