BUZ80
BUZ80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■TYPICAL RDS(on) = 3.3 Ω
■AVALANCHERUGGEDNESS TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW INPUT CAPACITANCE
■LOW GATE CHARGE
■APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWERSUPPLIES (SMPS)
■CONSUMER AND INDUSTRIAL LIGHTING
■DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
BUZ80
BUZ80FI 800 V
800 V <4Ω
<4Ω3.4 A
2.1 A
123
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUZ80 BUZ80FI
VDS Drain-source Voltage (VGS =0) 800 V
V
DGR Drain- gate Voltage (RGS =20kΩ)800V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C3.42.1A
I
D
Drain Current (continuous) at Tc=100o
C2.1 1.3A
I
DM(•) Drain Current (pulsed) 13 13 A
Ptot Total Dissipation at Tc=25o
C 100 40 W
Derating Factor 0.8 0.32 W/oC
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulsewidth limited by safe operating area
123
1/10
THERMAL DATA
TO-220 ISOWATT220
Rthj-case Thermal Resistance Junction-case Max 1.25 3.12 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 3.4 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =50V) 180 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 4.8 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc= 100 oC, pulse width limited by Tjmax, δ <1%) 2.1 A
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS = 0 800 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS = Max Rating x 0.8 Tc=125o
C25
250 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =±
20 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID=1mA 2 3 4 V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D= 1.7 A 3.3 4 Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 3.4 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=1.7A 1 3.5 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS =0 650
82
28
850
105
40
pF
pF
pF
BUZ80/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =30V I
D=2.1A
R
G=50
ΩV
GS =10V
(see test circuit, figure 3)
50
110 ns
ns
(di/dt)on Turn-on Current Slope VDD =640V I
D=3A
R
G=50
ΩV
GS =10V
(see test circuit, figure 5)
170 A/µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V ID=3A V
GS =10V 42
6
17
55 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =640V I
D=3A
R
G=50
ΩV
GS =10V
(see test circuit, figure 5)
95
20
120
120
25
165
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
3.4
13 A
A
VSD (∗) Forward On Voltage ISD =6A V
GS =0 2.5 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =3A di/dt=100A/µs
V
DD =80V T
j=150o
C
(see test circuit, figure 5)
700
8.8
25
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
BUZ80/FI
3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
BUZ80/FI
4/10
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
BUZ80/FI
5/10
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
BUZ80/FI
6/10
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
BUZ80/FI
7/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BUZ80/FI
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
BUZ80/FI
9/10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which may results fromits use. No
licenseis granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as criticalcomponents in lifesupport devices or systems without express
writtenapproval ofSGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printedin Italy- All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China- France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain- Sweden- Switzerland -Taiwan - Thailand- UnitedKingdom - U.S.A
.
BUZ80/FI
10/10
