IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V Maximum Ratings IC25 TC = 25C 70 A IC90 TC = 90C 35 A ICM TC = 25C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 5 Clamped inductive load ICM = 90 @ 0.8 VCES A tSC TJ = 125C, VCE = 720 V; VGE = 15 V, RG = 22 PC TC = 25C 10 s 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque (TO-247) Symbol TO-247 TO-268 Test Conditions BVCES IC = 1.0 mA, VGE = 0 V 1200 VGE(th) IC = 250 A, VCE = VGE 3 ICES VCE = 0.8 VCES Note 1 IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IC90, VGE = 15 V Note 2 (c) 2002 IXYS All rights reserved 300 C 6 4 g g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 125C TJ = 25C TJ = 125C C E TO-268 ( IXST) G E G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features l 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight (TAB) G l Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity Applications * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * DC choppers V 6 V 50 2.5 A mA 100 nA 3.6 2.9 V V 98669B (01/02) IXSH 35N120B IXST 35N120B Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Note 2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 Cies 23 S 3600 pF 260 pF Cres VCE = 25 V, VGE = 0 V, f = 1 MHz 75 pF Qg 120 nC 33 nC 49 nC Coes IC Qge = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25C 36 ns tri IC = IC90, VGE = 15 V RG = 5 VCE = 0.8 VCES Note 3 27 ns td(off) tfi Eoff 160 180 300 300 5 9 mJ Inductive load, TJ = 125C 38 ns tri IC = IC90, VGE = 15 V RG = 5 , VCE = 0.8 VCES Note 3 29 ns Eon Eoff 2.5 mJ 240 340 ns ns 9 mJ 0.42 K/W RthJC (TO-247) RthCK Notes: 1. 0.25 1 = Gate 2 = Collector 3 = Emitter Tab = Collector ns ns td(on) td(off) tfi TO-247 AD Outline (IXSH) TO-268 Outline (IXST) K/W Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 s, duty cycle 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1