IRFZ40
IRFZ40FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
■TYPICAL RDS(on) = 0.022 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW GATE CHARGE
■HIGH CURRENT CAPABILITY
■175oC OPERATING TEMPERATURE
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAY DRIVERS
■REGULATORS
■DC-DC & DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
IRFZ40
IRFZ40FI 50 V
50 V < 0.028 Ω
< 0.028 Ω50 A
27 A
123
TO-220 ISOWATT220
July 1993
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRFZ40 IRFZ40FI
VDS Drain-source Voltage (VGS =0) 50 50 V
V
DGR Drain- gate Voltage (RGS =20kΩ)5050V
V
GS Gate-source Voltage ±20 V
IDDrain Current (cont.) at Tc=25o
C5027A
I
D
Drain Current (cont.) at Tc=100o
C3519A
I
DM(•) Drain Current (pulsed) 200 200 A
Ptot Total Dissipation at Tc=25o
C 150 45 W
Derating Factor 1 0.3 W/oC
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulsewidth limited by safe operating area
123
1/9
THERMAL DATA
TO-220 ISOWATT220
Rthj-case Thermal Resistance Junction-case Max 1 3.33 oC/W
Rthj-amb
Rthc-s
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 50 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =25V) 400 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 100 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc= 100 oC, pulse width limited by Tjmax, δ <1%) 35 A
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS =0 50 V
I
DSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS = Max Rating x 0.8 Tc=125o
C250
1000 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID=250µA22.94V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D= 29 A 0.022 0.028 Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max VGS =10V 50 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=29A 17 22 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 1700
630
200
2200
850
260
pF
pF
pF
IRFZ40/FI
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =25V I
D=29A
R
G=4.7 ΩV
GS =10V
(see test circuit)
50
110
60
25
70
160
90
35
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=64A V
GS =10V
V
DD = Max Rating x 0.8
(see test circuit)
50
15
27
70 nC
nC
nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
50
200 A
A
VSD (∗) Forward On Voltage VGS =0 I
SD =50A 2 V
t
rr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 50 A di/dt = 100 A/µs
VDD =30V T
j=150o
C150
0.45
ns
µC
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse widthlimited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
IRFZ40/FI
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Thermal Impedance for TO-220
Derating Curve for TO-220
Output Characteristics
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Transfer Characteristics
IRFZ40/FI
4/9
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
IRFZ40/FI
5/9
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
Switching Time Test Circuit Gate Charge Test Circuit
IRFZ40/FI
6/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
IRFZ40/FI
7/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
IRFZ40/FI
8/9
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement of patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use ascriticalcomponentsin life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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IRFZ40/FI
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