ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23-6 package APPLICATIONS * DC - DC converters * Power management functions * Disconnect switches * Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN3A03E6TA 7" 8mm 3000 units ZXMN3A03E6TC 13" 8mm 10000 units DEVICE MARKING Top View * 3A3 ISSUE 3 - OCTOBER 2005 1 SEMICONDUCTORS ZXMN3A03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-source voltage V DSS Gate source voltage V GS Continuous drain current V GS =10V; T A =25C (b) V GS =10V; T A =70C (b) V GS =10V; T A =25C (a) Pulsed drain current (c) LIMIT UNIT 30 V 20 V ID 4.6 3.7 3.7 A I DM 17 A IS 2.6 A I SM 17 A (a) PD 1.1 8.8 W mW/C Power dissipation at T A =25C (b) Linear derating factor PD 1.7 13.6 W mW/C Operating and storage temperature range T j :T stg -55 to +150 C VALUE UNIT Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25C Linear derating factor (b) THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) R JA 113 C/W Junction to ambient (b) R JA 73 C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 3 - OCTOBER 2005 SEMICONDUCTORS 2 ZXMN3A03E6 CHARACTERISTICS ISSUE 3 - OCTOBER 2005 3 SEMICONDUCTORS ZXMN3A03E6 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER SYMBOL MIN. 30 TYP. MAX. UNIT CONDITIONS. STATIC Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate-body leakage I GSS Gate-source threshold voltage V GS(th) Static drain-source on-state resistance Forward transconductance (1)(3) (1) V I D =250A, V GS =0V 0.5 A V DS =30V, V GS =0V 100 nA V GS =20V, V DS =0V V I =250A, V DS = V GS D V GS =10V, I D =7.8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A 1 R DS(on) 0.050 0.065 g fs 10 S Input capacitance C iss 600 pF Output capacitance C oss 104 pF Reverse transfer capacitance C rss 58.5 pF t d(on) 2.9 ns DYNAMIC (3) SWITCHING V DS =25 V, V GS =0V, f=1MHz (2) (3) Turn-on delay time Rise time tr 6.4 ns Turn-off delay time t d(off) 16.0 ns Fall time tf 11.2 ns Gate charge Qg 6.9 nC Total gate charge Qg 12.6 nC Gate-source charge Q gs 2.0 nC Gate-drain charge Q gd 2.0 nC Diode forward voltage (1) V SD 0.85 Reverse recovery time (3) t rr Reverse recovery charge (3) Q rr V DD =15V, I D =3.5A R G =6.0, V GS =10V V DS =15V,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE 0.95 V T J =25C, I S =3.2A, V GS =0V 18.8 ns 14.1 nC T J =25C, I F =3.5A, di/dt= 100A/s NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 3 - OCTOBER 2005 SEMICONDUCTORS 4 ZXMN3A03E6 TYPICAL CHARACTERISTICS ISSUE 3 - OCTOBER 2005 5 SEMICONDUCTORS ZXMN3A03E6 TYPICAL CHARACTERISTICS ISSUE 3 - OCTOBER 2005 SEMICONDUCTORS 6 ZXMN3A03E6 PACKAGE OUTLINE PAD LAYOUT DETAILS CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118 A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069 A2 0.90 1.30 b 0.35 0.50 0.035 0.051 L 0.10 0.60 0.004 0.002 0.014 0.019 e 0.95 REF 0.037 REF C 0.09 0.20 0.0035 0.008 e1 1.90 REF 0.074 REF D 2.80 3.00 0.110 0.118 L 0 10 0 10 (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - OCTOBER 2005 7 SEMICONDUCTORS