1
SEMICONDUCTORS
SUMMARY
V(BR)DSS = 30V; RDS(ON) = 0.050 ID= 4.6A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23-6 package
APPLICATIONS
•DC - DC converters
•Power management functions
•Disconnect switches
•Motor control
DEVICE MARKING
•3A3
ZXMN3A03E6
ISSUE 3 - OCTOBER 2005
30V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A03E6TA 7” 8mm 3000 units
ZXMN3A03E6TC 13” 8mm 10000 units
ORDERING INFORMATION
Top View
PINOUT
SOT23-6
ZXMN3A03E6
SEMICONDUCTORS
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PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) RθJA 113 °C/W
Junction to ambient (b) RθJA 73 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDSS 30 V
Gate source voltage VGS 20 V
Continuous drain current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID4.6
3.7
3.7
A
Pulsed drain current (c) IDM 17 A
Continuous source current (body diode) (b) IS2.6 A
Pulsed source current (body diode) (c) ISM 17 A
Power dissipation at TA=25°C (a)
Linear derating factor
PD1.1
8.8
W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor
PD1.7
13.6
W
mW/°C
Operating and storage temperature range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
CHARACTERISTICS
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SEMICONDUCTORS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage V(BR)DSS 30 V ID=250␮A, VGS=0V
Zero gate voltage drain current IDSS 0.5 ␮AV
DS=30V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-source threshold voltage VGS(th) 1VI
D=250␮A, VDS=V
GS
Static drain-source on-state resistance (1) RDS(on) 0.050
0.065
⍀
⍀
VGS=10V, ID=7.8A
VGS=4.5V, ID=6.8A
Forward transconductance (1)(3) gfs 10 S VDS=10V,ID=7.8A
DYNAMIC (3)
Input capacitance Ciss 600 pF
VDS=25 V, VGS=0V,
f=1MHz
Output capacitance Coss 104 pF
Reverse transfer capacitance Crss 58.5 pF
SWITCHING (2) (3)
Turn-on delay time td(on) 2.9 ns
VDD =15V, ID=3.5A
RG=6.0⍀,V
GS=10V
Rise time tr6.4 ns
Turn-off delay time td(off) 16.0 ns
Fall time tf11.2 ns
Gate charge Qg6.9 nC VDS=15V,VGS=5V,
ID=3.5A
Total gate charge Qg12.6 nC
VDS=15V,VGS=10V,
ID=3.5A
Gate-source charge Qgs 2.0 nC
Gate-drain charge Qgd 2.0 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=3.2A,
VGS=0V
Reverse recovery time (3) trr 18.8 ns TJ=25°C, IF=3.5A,
di/dt= 100A/µs
Reverse recovery charge (3) Qrr 14.1 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
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Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE PAD LAYOUT DETAILS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118
A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069
A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.002
b 0.35 0.50 0.014 0.019 e 0.95 REF 0.037 REF
C 0.09 0.20 0.0035 0.008 e1 1.90 REF 0.074 REF
D 2.80 3.00 0.110 0.118 L 0° 10° 0° 10°
PACKAGE DIMENSIONS
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.