ZXMN3A03E6
SEMICONDUCTORS
ISSUE 3 - OCTOBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage V(BR)DSS 30 V ID=250A, VGS=0V
Zero gate voltage drain current IDSS 0.5 AV
DS=30V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-source threshold voltage VGS(th) 1VI
D=250A, VDS=V
GS
Static drain-source on-state resistance (1) RDS(on) 0.050
0.065
⍀
⍀
VGS=10V, ID=7.8A
VGS=4.5V, ID=6.8A
Forward transconductance (1)(3) gfs 10 S VDS=10V,ID=7.8A
DYNAMIC (3)
Input capacitance Ciss 600 pF
VDS=25 V, VGS=0V,
f=1MHz
Output capacitance Coss 104 pF
Reverse transfer capacitance Crss 58.5 pF
SWITCHING (2) (3)
Turn-on delay time td(on) 2.9 ns
VDD =15V, ID=3.5A
RG=6.0⍀,V
GS=10V
Rise time tr6.4 ns
Turn-off delay time td(off) 16.0 ns
Fall time tf11.2 ns
Gate charge Qg6.9 nC VDS=15V,VGS=5V,
ID=3.5A
Total gate charge Qg12.6 nC
VDS=15V,VGS=10V,
ID=3.5A
Gate-source charge Qgs 2.0 nC
Gate-drain charge Qgd 2.0 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=3.2A,
VGS=0V
Reverse recovery time (3) trr 18.8 ns TJ=25°C, IF=3.5A,
di/dt= 100A/µs
Reverse recovery charge (3) Qrr 14.1 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.