ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES * Center gate * International standard case TO-209AC (TO-94) * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling * Hermetic glass-metal case with (Glass-metal seal over 1200 V) ceramic insulator * Compliant to RoHS directive 2002/95/EC TO-209AC (TO-94) * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY * DC motor controls IT(AV) 110 A * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 110 A 90 C 175 IT(RMS) ITSM I2t 50 Hz 2700 60 Hz 2830 50 Hz 36.4 60 Hz 33.2 VDRM/VRRM Typical tq TJ A kA2s 400 to 1600 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 ST110S Document Number: 94393 Revision: 17-Aug-10 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 20 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave Maximum I2t for fusing I2t A 90 C 175 t = 10 ms No voltage reapplied 2700 100 % VRRM reapplied 2270 t = 8.3 ms t = 10 ms t = 10 ms I2t UNITS 110 DC at 85 C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 2830 Sinusoidal half wave, initial TJ = TJ maximum 2380 36.4 t = 8.3 ms No voltage reapplied t = 10 ms 100 % VRRM 25.8 t = 8.3 ms reapplied 23.5 33.2 t = 0.1 to 10 ms, no voltage reapplied 364 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.90 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.92 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.79 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.81 Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 Maximum on-state voltage VTM Maximum holding current IH Typical latching current IL 600 TJ = 25 C, anode supply 12 V resistive load A 1000 kA2s kA2s V m V mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned-on current dI/dt VALUES UNITS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM TEST CONDITIONS 500 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 2.0 Typical turn-off time tq ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 20 mA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94393 Revision: 17-Aug-10 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM TEST CONDITIONS IGT 5 TJ = TJ maximum, f = 50 Hz, d% = 50 1 TJ = 25 C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger W A 20 V 5.0 TJ = 125 C VGT UNITS 2.0 TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate voltage required to trigger MAX. TJ = TJ maximum, tp 5 ms TJ = - 40 C DC gate current required to trigger VALUES TYP. VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.195 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 Mounting torque, 10 % K/W Non-lubricated threads Lubricated threads Approximate weight Case style Document Number: 94393 Revision: 17-Aug-10 C See dimensions - link at the end of datasheet For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 15.5 (137) 14 (120) Nm (lbf * in) 130 g TO-209AC (TO-94) www.vishay.com 3 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A Vishay Semiconductors RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.035 0.025 120 0.041 0.042 90 0.052 0.056 60 0.076 0.079 30 0.126 0.127 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 130 ST110S Series RthJC (DC) = 0.195 K/W Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 120 110 Conduction Angle 100 90 30 60 90 120 180 80 0 20 40 60 80 100 120 ST110S Series RthJC (DC) = 1.95 K/W 120 110 Conduction Period 30 100 60 90 90 120 180 80 0 20 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics e lt -D K/ W W K/ .1 =0 RMS Limit SA R th 0. 6 W K/ 100 K/ W K/ W W K/ 120 0. 4 0. 5 2 0. 180 120 90 60 30 140 3 0. 0.8 a K/ W 1K /W 80 60 Conduction Angle R Maximum Average On-state Power Loss (W) Fig. 1 - Current Ratings Characteristics 160 DC 40 60 80 100 120 140 160 180 1.2 K/ W 40 ST110S Series TJ = 125C 20 0 0 20 40 60 80 100 Average On-state Current (A) 120 25 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94393 Revision: 17-Aug-10 ST110SPbF Series Vishay Semiconductors 220 1 0. K/ W W K/ 0.4 100 RMS Limit 80 Conduction Period 60 K/ W 0.5 K/ W 0.6 K/ W 0.8 K/ W 1K /W R 120 ta el -D 140 0. 3 = 160 W K/ 180 A hS R t DC 180 120 90 60 30 200 2 0. Maximum Average On-state Power Loss (W) Phase Control Thyristors (Stud Version), 110 A 1.2 K/ W 40 ST110S Series TJ = 125C 20 0 0 20 40 60 80 100 120 140 160 180 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2200 2000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 2400 1800 1600 1400 1200 ST110S Series 1000 1 10 100 2800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2400 Initial TJ = 125C No Voltage Reapplied 2200 Rated VRRM Reapplied 2600 2000 1800 1600 1400 1200 ST110S Series 1000 0.01 0.1 1 10 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25C 100 Tj = 125C ST110S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Document Number: 94393 Revision: 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A Transient Thermal Impedance Z thJC (K/W) Vishay Semiconductors 1 Steady State Value R thJC = 0.195 K/W (DC Operation) 0.1 0.01 ST110S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) VGD IGD 0.1 0.001 0.01 Tj=25 C 1 Tj=-40 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (3) (4) Frequency Limited by PG(AV) Device: ST110S Series 0.1 (2) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94393 Revision: 17-Aug-10 ST110SPbF Series Phase Control Thyristors (Stud Version), 110 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code ST 11 0 S 16 P 0 V L PbF 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part marking 3 - 0 = Converter grade 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 20UNF threads 7 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 2 = Flag terminals (for cathode and gate terminals) 8 - V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) 9 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 10 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94393 Revision: 17-Aug-10 www.vishay.com/doc?95078 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors TO-209AC (TO-94) for ST110S Series DIMENSIONS in millimeters (inches) Glass metal seal 37 )M IN . 2.6 (0.10) MAX. 16.5 (0.65) MAX. (0. O 8.5 (0.33) 9 .5 O 4.3 (0.17) Flexible lead 20 (0.79) MIN. 2 C.S. 16 mm (0.025 s.i.) C.S. 0.4 mm2 Red silicon rubber (0.0006 s.i.) Red cathode 157 (6.18) 170 (6.69) White gate 215 10 (8.46 0.39) Fast-on terminals Red shrink 70 (2.75) MIN. White shrink AMP. 280000-1 REF-250 O 23.5 (0.93) MAX. 29 (1.14) MAX. 12.5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Document Number: 95078 Revision: 23-Sep-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions TO-209AC (TO-94) for ST110S Series Vishay Semiconductors DIMENSIONS in millimeters (inches) Ceramic housing 37 )M IN . 2.6 (0.10) MAX. 16.5 (0.65) MAX. (0. O 8.5 (0.33) 9 .5 O 4.3 (0.17) Flexible lead 20 (0.79) MIN. C.S. 16 mm2 (0.025 s.i.) C.S. 0.4 mm2 Red silicon rubber (0.0006 s.i.) Red cathode 157 (6.18) 170 (6.69) White gate Red shrink 70 (2.75) MIN. 215 10 (8.46 0.39) White shrink O 22.5 (0.88) MAX. 29 (1.14) MAX. 12.5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95078 Revision: 23-Sep-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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