Document Number: 94393 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 17-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Phase Control Thyristors (Stud Version), 110 A
ST110SPbF Series
Vishay Semiconductors
FEATURES
•Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with ceramic insulator
(Glass-metal seal over 1200 V)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 110 A
TO-209AC (TO-94)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
110 A
TC90 °C
IT(RMS) 175
A
ITSM
50 Hz 2700
60 Hz 2830
I2t
50 Hz 36.4
kA2s
60 Hz 33.2
VDRM/VRRM 400 to 1600 V
tqTypical 100 μs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ST110S
04 400 500
20
08 800 900
12 1200 1300
16 1600 1700
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ST110SPbF Series
Vishay Semiconductors Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 110 A
90 °C
Maximum RMS on-state current IT(RMS) DC at 85 °C case temperature 175
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
2700
t = 8.3 ms 2830
t = 10 ms 100 % VRRM
reapplied
2270
t = 8.3 ms 2380
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
36.4
kA2s
t = 8.3 ms 33.2
t = 10 ms 100 % VRRM
reapplied
25.8
t = 8.3 ms 23.5
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 364 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.90 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.92
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.79 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.81
Maximum on-state voltage VTM Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
500 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 2.0
μs
Typical turn-off time tq
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 20 mA
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ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A Vishay Semiconductors
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 5 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 1
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
2.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
180 -
mATJ = 25 °C 90 150
TJ = 125 °C 40 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.9 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.2 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case RthJC DC operation 0.195
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08
Mounting torque, ± 10 % Non-lubricated threads 15.5 (137) Nm
(lbf · in)
Lubricated threads 14 (120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
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ST110SPbF Series
Vishay Semiconductors Phase Control Thyristors
(Stud Version), 110 A
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.035 0.025
TJ = TJ maximum K/W
120° 0.041 0.042
90° 0.052 0.056
60° 0.076 0.079
30° 0.126 0.127
80
90
100
110
120
130
0 20406080100120
Maximum Allowable Case Temperature (°C)
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
ST110S Series
R (DC) = 0.195 K/W
thJC
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST110S Series
R (DC) = 1.95 K/W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.1K
/W-DeltaR
0.2K/W
0.3K
/W
0.4K
/W
0.5K
/W
0.6K
/W
1K
/W
0.8K
/W
1.2K
/W
thS
A
0
20
40
60
80
100
120
140
160
020406080100120
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST110S Series
T = 125°C
J
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ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A Vishay Semiconductors
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.1K/ W-DeltaR
thS
A
0.2K
/W
0.3K
/W
0.4K/W
0.6K
/W
0.8K
/W
1K
/W
0.5K
/W
1.2K
/W
0
20
40
60
80
100
120
140
160
180
200
220
0 20 40 60 80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST110S Series
T = 125°C
J
1000
1200
1400
1600
1800
2000
2200
2400
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST110S Series
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01 0.1 1 10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
ST110S Series
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
10
100
1000
10000
0.5 1.5 2.5 3.5 4.5
Tj = 25˚C
Tj = 125˚C
ST110S Series
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ST110SPbF Series
Vishay Semiconductors Phase Control Thyristors
(Stud Version), 110 A
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Gate Characteristics
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
ST110S Series
Steady State Value
R = 0.195 K/W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
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ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A Vishay Semiconductors
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95078
1- Thyristor
2- Essential part marking
3- 0 = Converter grade
4
10 - Lead (Pb)-free
- S = Compression bonding stud
8- V = Glass-metal seal (only up to 1200 V)
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6- P = Stud base 20UNF threads
7- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (for cathode and gate terminals)
9- Critical dV/dt:
None = Ceramic housing (over 1200 V)
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9 10
ST 11 0 S 16 P 0 V L PbF
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Revision: 23-Sep-08 1
TO-209AC (TO-94) for ST110S Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Fast-on terminals
C.S. 0.4 mm2
White shrink
Red shrink
Red cathode
Red silicon rubber
Ø 4.3 (0.17)
12.5 (0.49) MAX.
(0.0006 s.i.)
Glass metal seal
Ø 8.5 (0.33)
16.5 (0.65) MAX.
Ø 23.5 (0.93) MAX.
C.S. 16 mm2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.5 (0.37) MIN.
White gate
AMP. 280000-1
REF-250
20 (0.79) MIN.
29 (1.14)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
70 (2.75)
MIN.
215 ± 10
(8.46 ± 0.39)
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2Revision: 23-Sep-08
Outline Dimensions
Vishay Semiconductors TO-209AC (TO-94) for ST110S Series
DIMENSIONS in millimeters (inches)
Ceramic housing
1/2"-20UNF-2A
SW 27
Red shrink
Red cathode
Red silicon rubber
12.5 (0.49) MAX.
29 (1.14)
MAX.
21 (0.83)
MAX.
157 (6.18)
170 (6.69)
70 (2.75)
MIN.
Ø 4.3 (0.17)
Ø 8.5 (0.33)
16.5 (0.65) MAX.
29.5 (1.16) MAX.
C.S. 0.4 mm2
White shrink
(0.0006 s.i.)
Ø 22.5 (0.88) MAX.
White gate
215 ± 10
(8.46 ± 0.39)
C.S. 16 mm2
(0.025 s.i.)
Flexible lead
2.6 (0.10) MAX.
9.5 (0.37) MIN.
20 (0.79) MIN.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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including but not limited to the warranty expressed therein.
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