Ordering number:ENN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications Package Dimensions * Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1508/2SD2281] * Low collector-to-emitter saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. * Wide ASO and highly registant to breakdown. * Micaless package facilitating easy mounting. 16.0 3.4 5.6 2.0 21.0 22.0 5.0 8.0 3.1 2.0 20.4 4.0 2.8 2.0 1.0 0.6 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML 3.5 1 ( ) : 2SB1508 5.45 Specifications 5.45 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings Unit VCBO VCEO (-)60 V (-)50 V VEBO IC (-)6 V (-)12 A ICP (-)25 A 3.0 W Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 45 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)40V, IE=0 (-)0.1 mA Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)0.1 mA hFE1 hFE2 VCE=(-)2V, IC=(-)1A VCE=(-)2V, IC=(-)5A fT VCE=(-)5V, IC=(-)1A DC Current Gain Gain-Bandwidth Product 70* 280* 30 * : The 2SB1508/2SD2281 are classified by 1A hFE as follows : 10 MHz Continued on next page. Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42804TN (PC)/N1098HA (KT)/5111MH, JK (KOTO) No.3714-1/4 2SB1508/2SD2281 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(-)1mA, IC=0 ton Storage Time typ (-0.5) V 0.4 V V (-)50 V (-)6 V See specified test circuit. tf Unit max (-)60 See specified test circuit. tstg Fall Time min IC=(-)6A, IB=(-)0.3A V(BR)CBO IC=(-)1mA, IE=0 V(BR)CEO IC=(-)1mA, RBE= Turn-ON Time Ratings Conditions See specified test circuit. (0.2) s 0.1 s (0.4) s 1.2 s (0.1) s 0.5 s Switching Time Test Circuit IB1 PW=20s tr, tf15ns IB2 1 INPUT OUTPUT RB VR 50 RL 4 100 + + 100F 470F --5V 20V 10IB1= --10IB2=IC=5A (For PNP, the polarity is reversed.) mA --400 --12 --10 --200mA --8 --100mA --80mA --60mA --40mA --20mA IB=0 --6 --4 --2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Collector-to-Emitter Voltage, VCE - V A 1A 100mA 80mA 60mA 8 6 40mA 4 IB=0 0 --6 --4 --2 0.6 0.8 1.0 1.2 1.4 ITR09844 2SD2281 VCE=2V 14 --8 0.4 IC -- VBE 16 --10 0.2 Collector-to-Emitter Voltage, VCE - V ITR09843 Collector Current, IC - A Collector Current, IC - A 200mA 10 0 --1.4 --12 0 12 20mA 2SB1508 VCE= --2V --14 2SD2281 A 2 IC -- VBE --16 400m 60 14 Collector Current, IC - A Collector Current, IC - A --14 IC -- VCE 16 2SB1508 mA A --1 --800 mA 0 --60 0m IC -- VCE --16 12 10 8 6 4 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V --1.2 --1.4 ITR09845 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 1.4 ITR09846 No.3714-2/4 2SB1508/2SD2281 hFE -- IC 1000 2SB1508 VCE= --2V 3 3 2 2 100 7 5 3 2 10 7 5 100 7 5 3 2 10 7 5 3 2 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 2 5 7 --10 2 ITR09847 Collector Current, IC - A 5 7 0.1 2 3 5 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2 7 5 3 2 0 I C / I B=2 =10 IC / IB 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC - A 7 10 2 ITR09848 3 2 5 3 2 7 --10 2 ITR09849 IC/ 5 IC 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC - A 7 10 2 ITR09850 3 2 2 5 3 2 1.0 5 n tio ion 3 500s era op t era op 5 IC=12A 10 DC DC --1.0 3 2 Collector Current, IC - A 5 PT100s 200s ICP=25A s 1m ms 10 ms 0 10 500s s 1m ms 10 ms 0 10 IC=-12A --10 0 =1 / IB ASO 5 PT100s 200s ICP=-25A 3 2 20 I B= 3 ASO 5 Collector Current, IC - A 5 2SD2281 0.1 --0.1 7 5 3 2 2SB1508 100s to 100ms : Single pulse Tc=25C --0.1 5 --1.0 2 5 3 2 --10 3 5 5 --100 ITR09851 5 1.0 2 5 3 3 5 100 ITR09852 PC -- Ta 50 2SB1508 / 2SD2281 2SB1508 / 2SD2281 3.0 2 10 Collector-to-Emitter Voltage, VCE - V PC -- Ta 3.2 2SD2281 100s to 100ms : Single pulse Tc=25C 0.1 Collector-to-Emitter Voltage, VCE - V 45 Collector Dissipation, PC - W 2.8 Collector Dissipation, PC - W 3 1.0 --1.0 5 2 5 3 2 7 1.0 VCE(sat) -- IC 10 2SB1508 7 5 3 Collector Current, IC - A VCE(sat) -- IC --10 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2SD2281 VCE=2V 7 5 DC Current Gain, hFE DC Current Gain, hFE 7 5 hFE -- IC 1000 2.4 N o 2.0 he at sin k 1.6 1.2 0.8 40 30 20 10 0.4 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR09853 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR09854 No.3714-3/4 2SB1508/2SD2281 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. PS No.3714-4/4