MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode (FRED) Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVyy IFRM Tcase = 75C Tcase = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 1 MEE 95-06 DA 3 Symbol IFSM 1 2 3 Maximum Ratings A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 142 95 TBD 1200 1300 A A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1080 1170 A A TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 7100 A2s A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5800 5700 A2s A2s -40...+150 -40...+125 110 C C C 280 W 3000 3600 V~ V~ TVJ = 45C; 3 TO-240 AA Type 1 VRRM = 600 V IFAV = 95 A trr = 250 ns Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 I2t TVJ Tstg THmax Ptot Tcase = 25C VISOL 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Md Mounting torque (M5) Terminal connection torque (M5) dS dA a Creep distance on surface Strike distance through air Maximum allowable acceleration 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 12.7 9.6 50 90 Weight mm mm m/s2 g Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Test Conditions IR TVJ = 25C TVJ = 25C TVJ = 125C VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM VF IF = 100 A; TVJ TVJ TVJ TVJ IF = 300 A; Characteristic Values (per diode) typ. max. 2 0.5 34 = 125C = 25C = 125C = 25C VT0 rT For power-loss calculations only TVJ = 125C RthJH RthJC DC current DC current trr IRM IF = 100 A VR = 300 V -di/dt = 200 A/ms TVJ = 100C TVJ = 25C TVJ = 100C 250 IFAV rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved mA mA mA 1.36 1.55 2.05 2.09 V V V V 1.01 2.85 V mW 0.550 0.450 K/W K/W 300 14 21 Dimensions in mm (1 mm = 0.0394") ns A A 749 Symbol 1-2 http://store.iiic.cc/ MEA 95-06 DA MEE 95-06 DA MEK 95-06 DA IF 200 A 175 4 C 150 Qr 3 60 A TVJ= 100C VR = 300V 50 TVJ= 100C VR = 300V IRM IF=190A IF= 95A IF=47.5A 40 125 TVJ=150C TVJ=100C TVJ=25C 100 IF=190A IF= 95A IF=47.5A 2 30 75 20 50 1 10 25 0 0.0 0.5 1.5 V VF 1.0 0 10 2.0 Fig. 1 Forward current IF versus voltage drop VF per leg 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 250 IRM 200 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.0 TVJ= 100C IF = 150A 40 VFR IF=190A IF= 95A IF=47.5A 1.0 0 A trr 200 Qr Kf 0 50 TVJ= 100C VR = 300V ns 1.5 A/ms 1000 -diF/dt s VFR 0.8 tfr tfr 30 0.6 20 0.4 10 0.2 150 0.5 100 0.0 50 0 50 100 C 150 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 0 0 200 400 600 800 diF/dt 0.0 1000 A/ms Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0.6 K/W 0.5 0.4 ZthJH Constants for ZthJH calculation: 0.3 i 0.2 1 2 3 4 0.1 0.0 0.001 0.01 0.1 1s Fig. 7 Transient thermal impedance junction to heatsink Rthi (K/W) ti (s) 0.037 0.138 0.093 0.282 0.002 0.134 0.25 0.274 10 t (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/