AUIRFP4409 - INFINEON TECHNOLOGIES AG

AUIRFP4409

HEXFET® Power MOSFET

G D S

Gate Drain Source

Features

Advanced Process Technology

Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Description

Specifically designed for Automotive applications, this HEXFET®

Power MOSFETs utilizes the latest processing techniques to

achieve low on-resistance per silicon area. This benefit com-

bined with the fast switching speed and ruggedized device de-

sign that HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable device for

use in Automotive and a wide variety of other applications.

Base part number Package Type Standard Pack

Form Quantity

AUIRFP4409 TO-247AC Tube 25 AUIRFP4409

Orderable Part Number

VDSS 300V

RDS(on) typ. 56m

max 69m

ID 38A

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27

IDM Pulsed Drain Current  152

PD @TC = 25°C Maximum Power Dissipation 341 W

Linear Derating Factor 2.3 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS (Thermally limited) Single Pulse Avalanche Energy  541 mJ

TSTG

Operating Junction and

Storage Temperature Range -55 to + 175

°C 

Soldering Temperature, for 10 seconds

(1.6mm from case) 300

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) 

Thermal Resistance 

Parameter Typ. Max. Units

RJC Junction-to-Case  ––– 0.44

°C/W

RCS Case-to-Sink, Flat Greased Surface 0.24 –––

RJA Junction-to-Ambient  ––– 40



AUTOMOTIVE GRADE

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-

tions. Ambient temperature (TA) is 25°C, unless otherwise specified.

TO-247AC

AUIRFP4409

1 2017-09-21

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– V/°C Reference to 25°C, ID = 3.5mA

RDS(on) Static Drain-to-Source On-Resistance ––– 56 69 m VGS = 10V, ID = 24A 

VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =300 V, VGS = 0V

––– ––– 250 VDS =300V,VGS = 0V,TJ =125°C

IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

RG Gate Resistance ––– 1.3 ––– 

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

gfs Forward Transconductance 45 ––– ––– S VDS = 50V, ID =24A

Qg Total Gate Charge ––– 83 125

nC 

ID = 24A

Qgs Gate-to-Source Charge ––– 28 42 VDS = 150V

Qgd Gate-to-Drain Charge ––– 26 39 VGS = 10V

td(on) Turn-On Delay Time ––– 18 –––

VDD = 195V

tr Rise Time ––– 23 ––– ID = 24A

td(off) Turn-Off Delay Time ––– 34 ––– RG= 2.2

tf Fall Time ––– 20 ––– VGS = 10V

Ciss Input Capacitance ––– 5168 –––

pF 

VGS = 0V

Coss Output Capacitance ––– 300 ––– VDS = 50V

Crss Reverse Transfer Capacitance ––– 77 ––– ƒ = 1.0MHz

Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 196 ––– VGS = 0V, VDS = 0V to 240V

See Fig.11

Coss eff.(TR) Output Capacitance (Time Related) ––– 265 ––– VGS = 0V, VDS = 0V to 240V

Diode Characteristics 

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current ––– ––– 40

MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 160 integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 24A,VGS = 0V 

trr Reverse Recovery Time ––– 302 ––– ns TJ = 25°C VDD = 255V

––– 379 ––– TJ = 125°C IF = 24A,

Qrr Reverse Recovery Charge ––– 1739 ––– nC TJ = 25°C di/dt = 100A/µs 

––– 2497 ––– TJ = 125°C 

IRRM Reverse Recovery Current ––– 13 ––– A TJ = 25°C 

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Recommended max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V.

 I

SD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ  175°C.

 Pulse width 400µs; duty cycle  2%.

 C

oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

 C

oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994 http://www.irf.com/technical-info/ app notes/an-994.pdf

 Ris measured at TJ approximately 90°C

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Fig 1. Typical Output Characteristics

2 4 6 8 10 12 14

VGS, Gate-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

TJ = 25°C

TJ = 175°C

VDS = 50V

60µs PULSE WIDTH

Fig 4. Normalized On-Resistance vs. Temperature

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

100

1000

ID, Drain-to-Source Current (A)

VGS

TOP 15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

BOTTOM 5.0V

60µs PULSE WIDTH

Tj = 25°C

5.0V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

5.0V

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

BOTTOM 5.0V

110 100 1000

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance (pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

-60 -20 20 60 100 140 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 24A

VGS = 10V

0 20 40 60 80 100 120

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VGS, Gate-to-Source Voltage (V)

VDS= 240V

VDS= 150V

VDS= 60V

ID = 24A

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-60 -20 20 60 100 140 180

TJ , Temperature ( °C )

270

280

290

300

310

320

330

340

350

360

370

V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

Id = 3.5mA

Fig 8. Maximum Safe Operating Area

-50 0 50 100 150 200 250 300 350

VDS, Drain-to-Source Voltage (V)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

Energy (µJ)

Fig 11. Typical Coss Stored Energy Fig 12. Threshold Voltage vs. Temperature

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

0.1

100

1000

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

Fig 9. Maximum Drain Current vs. Case Temperature

-75 -25 25 75 125 175 225

TJ , Temperature ( °C )

1.0

2.0

3.0

4.0

5.0

6.0

VGS(th), Gate threshold Voltage (V)

ID = 250µA

ID = 1.0mA

ID = 1.0A

Fig 10. Drain-to–Source Breakdown Voltage

25 50 75 100 125 150 175

TC , Case Temperature (°C)

ID, Drain Current (A)

Fig 7. Typical Source-Drain Diode Forward Voltage

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0200 400 600 800 1000

diF /dt (A/µs)

1000

1500

2000

2500

3000

3500

QRR (nC)

IF = 16A

VR = 255V

TJ = 25°C

TJ = 125°C

0200 400 600 800 1000

diF /dt (A/µs)

IRRM (A)

IF = 16A

VR = 255V

TJ = 25°C

TJ = 125°C

Fig 16. Typical Stored Charge vs. dif/dt Fig 17. Typical Stored Charge vs. dif/dt

Fig 14. Typical Recovery Current vs. dif/dt

0200 400 600 800 1000

diF /dt (A/µs)

IRRM (A)

IF = 24A

VR = 255V

TJ = 25°C

TJ = 125°C

0200 400 600 800 1000

diF /dt (A/µs)

1000

1500

2000

2500

3000

3500

4000

4500

5000

QRR (nC)

IF = 24A

VR = 255V

TJ = 25°C

TJ = 125°C

Fig 15. Typical Recovery Current vs. dif/dt

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z

thJC ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

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Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 19a. Unclamped Inductive Test Circuit

0.01



D.U.T

VDS

-V

DRIVER

15V

20V

Fig 20a. Switching Time Test Circuit

Fig 21a. Gate Charge Test Circuit

(BR)DSS

Fig 19b. Unclamped Inductive Waveforms

Fig 20b. Switching Time Waveforms

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 21b. Gate Charge Waveform

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TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

TO-247AC package is not recommended for Surface Mount Application.

YWWA

XX  XX

Date Code

Y= Year

WW= Work Week

A= Automotive, LeadFree

AUIRFP4409

Lot Code

Part Number

IR Logo

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Qualification Information

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification.

Infineon’s Industrial and Consumer qualification level is granted by ex-

tension of the higher Automotive level.

Moisture Sensitivity Level TO-247AC N/A

ESD

Machine Model Class M4 (+/- 500V)†

AEC-Q101-002

Human Body Model Class H2 (+/- 4000V)†

AEC-Q101-001

Charged Device Model Class C5 (+/- 2000)†

AEC-Q101-005

RoHS Compliant Yes

† Highest passing voltage.

Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Revision History

Date Comments

9/21/2017  Updated datasheet with corporate template

 Corrected typo error on package outline and part marking on page 7.