5SNA1800E170100 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VCE = 1700

V

IC = 1800

A

Doc. No. 5SYA 1554

-

03 Nov. 04

• Low-loss, rugged SPT chip-set

• Smooth switching SPT chip-set for

good EMC

• Industry standard package

• High power density

• AlSiC base-plate for high power

cycling capability

• AlN substrate for low thermal

resistance

Maximum rated values 1)

Parameter Symbol Conditions min max

Unit

Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700

V

DC collector current IC Tc = 80 °C 1800

A

Peak collector current ICM tp = 1 ms, Tc = 80 °C 3600

A

Gate-emitter voltage VGES -20 20 V

Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 11000

W

DC forward current IF 1800

A

Peak forward current IFRM 3600

A

Surge current IFSM VR = 0 V, Tvj = 125 °C,

tp = 10 ms, half-sinewave 16500

A

IGBT short circuit SOA tpsc VCC = 1200 V, VCEM CHIP ≤ 1700 V

VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs

Isolation voltage Visol 1 min, f = 50 Hz 4000

V

Junction temperature Tvj 150 °C

Junction operating temperature Tvj(op) -40 125 °C

Case temperature Tc -40 125 °C

Storage temperature Tstg -40 125 °C

M1 Base-heatsink, M6 screws 4 6

M2 Main terminals, M8 screws 8 10

Mounting torques 2) M3 Auxiliary terminals, M4 screws 2 3 Nm

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

ABB HiPak

TM

IGBT Module

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 2 of 9

IGBT characteristic values 3)

Parameter Symbol Conditions min typ max

Unit

Collector (-emitter)

breakdown voltage V(BR)CES V

GE = 0 V, IC = 10 mA, Tvj = 25 °C 1700

V

Tvj = 25 °C 2.0 2.3 2.6 V

Collector-emitter 4)

saturation voltage VCE sat IC = 1800 A, VGE = 15 V Tvj = 125 °C 2.3 2.6 2.9 V

Tvj = 25 °C 12 mA

Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 50 120 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500

500 nA

Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V

Gate charge Qge IC = 1800 A, VCE = 900 V,

VGE = -15 V .. 15 V 15.1 µC

Input capacitance Cies 166

Output capacitance Coes 16.5

Reverse transfer capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1 MHz,

Tvj = 25 °C 6.98 nF

Tvj = 25 °C 290

Turn-on delay time td(on) Tvj = 125 °C 300 ns

Tvj = 25 °C 230

Rise time tr

VCC = 900 V,

IC = 1800 A,

RG = 0.82 Ω,

VGE = ±15 V,

Lσ = 60 nH, inductive load Tvj = 125 °C 250 ns

Tvj = 25 °C 920

Turn-off delay time td(off) Tvj = 125 °C 1000

ns

Tvj = 25 °C 215

Fall time tf

VCC = 900 V,

IC = 1800 A,

RG = 0.82 Ω,

VGE = ±15 V,

Lσ = 60 nH, inductive load Tvj = 125 °C 230 ns

Tvj = 25 °C 380

Turn-on switching energy Eon VCC = 900 V, IC = 1800 A,

VGE = ±15 V, RG = 0.82 Ω,

Lσ = 60 nH, inductive load Tvj = 125 °C 550 mJ

Tvj = 25 °C 560

Turn-off switching energy Eoff VCC = 900 V, IC = 1800 A,

VGE = ±15 V, RG = 0.82 Ω,

Lσ = 60 nH, inductive load Tvj = 125 °C 700 mJ

Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,

VCC = 1200 V, VCEM CHIP ≤ 1700 V 8500

A

Module stray inductance Lσ CE 10 nH

TC = 25 °C 0.06

Resistance, terminal-chip RCC’+EE’ T

C

= 125 °C 0.085

mΩ

3) Characteristic values according to IEC 60747 – 9

4) Collector-emitter saturation voltage is given at chip level

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 3 of 9

Diode characteristic values 5)

Parameter Symbol Conditions min typ max

Unit

Tvj = 25 °C 1.4 1.65 2.0

Forward voltage 6) VF IF = 1800 A Tvj = 125 °C 1.4 1.7 2.0 V

Tvj = 25 °C 1140

Reverse recovery current Irr Tvj = 125 °C 1460

A

Tvj = 25 °C 440

Recovered charge Qrr Tvj = 125 °C 780 µC

Tvj = 25 °C 590

Reverse recovery time trr Tvj = 125 °C 890 ns

Tvj = 25 °C 310

Reverse recovery energy Erec

VCC = 900 V,

IF = 1800 A,

VGE = ±15 V,

RG = 0.82 Ω

Lσ = 60 nH

inductive load

Tvj = 125 °C 540 mJ

5) Characteristic values according to IEC 60747 – 2

6) Forward voltage is given at chip level

Thermal properties

Parameter Symbol Conditions min typ max

Unit

IGBT thermal resistance

junction to case Rth(j-c)IGBT 0.009

K/W

Diode thermal resistance

junction to case Rth(j-c)DIODE

0.017

K/W

Thermal resistance case 2)

to heatsink Rth(c-h) per module, λ grease = 1W/m x K 0.006

K/W

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

Mechanical properties

Parameter Symbol Conditions min typ max

Unit

Dimensions L x W x H

Typical , see outline drawing 190 x 140 x 38 mm

Term. to base:

23

Clearance distance DC according to IEC 60664-1

and EN 50124-1 Term. to term:

19 mm

Term. to base:

33

Surface creepage distance DSC according to IEC 60664-1

and EN 50124-1 Term. to term:

32 mm

Weight 1380

g

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 4 of 9

Electrical configuration

Outline drawing 2)

Note: all dimensions are shown in mm

2) For detailed mounting instructions refer to ABB Document No. 5SYA2039

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

This product has been designed and qualified for Industrial Level.

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 5 of 9

0

400

800

1200

1600

2000

2400

2800

3200

3600

0 1 2 3 4 5

VCE [V]

IC [A]

25 °C

125 °C

VGE = 15 V

0

400

800

1200

1600

2000

2400

2800

3200

3600

0123456789101112

VGE [V]

IC [A]

125 °C

25 °C

VGE = 25 V

Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level

0

400

800

1200

1600

2000

2400

2800

3200

3600

0123456

VCE [V]

IC [A]

Tvj = 25 °C

9V

11V

13V

15V

17V

0

400

800

1200

1600

2000

2400

2800

3200

3600

0123456

VCE [V]

IC [A]

Tvj = 125 °C

9V

11V

13V

15V

17V

Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 6 of 9

0.0

0.5

1.0

1.5

2.0

01000 2000 3000 4000

IC [A]

Eon, Eoff [J]

Eon

Eoff

V

CC = 900 V

RG = 0.82 ohm

V

GE = ±15 V

Tvj = 125 °C

Lσ = 60 nH

Esw[J] = 1.6 x 10-7 x IC2 + 2.6 x 10-4 x IC + 0.27

0

0.5

1

1.5

2

2.5

3

0 2 4 6 8

RG [ohm]

Eon, Eoff [J]

V

CC = 900 V

IC = 1800 A

V

GE = ±15 V

Tvj = 125 °C

Lσ = 60 nH Eon

Eoff

Fig. 5 Typical switching energies per pulse

vs collector current Fig. 6 Typical switching energies per pulse

vs gate resistor

0.1

1

10

01000 2000 3000 4000

IC [A]

td(on), tr, td(off), tf [µs]

td(on)

td(off)

tr

tf

V

CC = 900 V

RG = 0.82 ohm

V

GE = ±15 V

Tvj = 125 °C

Lσ = 60 nH

0.1

1

10

0 2 4 6 8

RG [ohm]

td(on),tr, td(off), t f [µs]

td(on)

td(off)

tr

tf

V

CC = 900V

I

C = 1800 A

V

GE = ±15 V

T

vj = 125 °C

L

σ = 60 nH

Fig. 7 Typical switching times

vs collector current Fig. 8 Typical switching times

vs gate resistor

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 7 of 9

1

10

100

1000

0 5 10 15 20 25 30 35

VCE [V]

C [nF]

Cies

Coes

Cres

V

GE = 0 V

fOSC = 1 MHz

V

OSC = 50 mV

0

5

10

15

20

0 2 4 6 8 10 12 14

Qg [µC]

VGE [V]

V

CC

= 900 V

V

CC = 1300 V

IC = 1800 A

Tvj = 25 °C

Fig. 9 Typical capacitances

vs collector-emitter voltage Fig. 10 Typical gate charge characteristics

0

0.5

1

1.5

2

2.5

0500 1000 1500 2000

VCE [V]

ICpulse / IC

Chip

Module

V

CC ≤ 1200 V, Tvj = 125 °C

V

GE = ±15 V, RG = 0.82 ohm

Fig. 11 Turn-off safe operating area (RBSOA)

5SNA 1800E170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1554-03 Nov. 04 page 8 of 9

0

100

200

300

400

500

600

700

800

01000 2000 3000 4000

IF [A]

Erec [mJ]

0

200

400

600

800

1000

1200

1400

1600

Qrr [µC], Irr [A]

V

CC = 900 V

RG = 0.82 ohm

Tvj = 125 °C

Lσ = 60 nH

Irr

Qrr

Erec

Erec [mJ] = -6 x 10-5 x IF2 + 0.371 x IF + 65

0

100

200

300

400

500

600

700

800

900

1 2 3 4 5 6 7 8 9 10

di/dt [kA/µs]

Erec [mJ], Qrr [µC]

0

200

400

600

800

1000

1200

1400

1600

1800

Irr [A]

V

CC = 900 V

IF = 1800 A

Tvj = 125 °C

Lσ = 60 nH

Erec

Qrr

Irr

R

G

= 0.56 ohm

R

G

= 0.82 ohm

R

G

= 1.5 ohm

R

G

= 2.2 ohm

R

G

= 6.8 oh m

R

G

= 3.9 ohm

R

G

= 5.6 ohm

Fig. 12 Typical reverse recovery characteristics

vs forward current Fig. 13 Typical reverse recovery characteristics

vs di/dt

0

400

800

1200

1600

2000

2400

2800

3200

3600

00.5 1 1.5 2 2.5

VF [V]

IF [A]

125°C

25°C

0

400

800

1200

1600

2000

2400

2800

3200

3600

4000

0500 1000 1500 2000

VR [V]

IR [A]

V

CC ≤ 1200 V

di/dt ≤ 9000 A/µs

Tvj = 125 °C

Fig. 14 Typical diode forward characteristics,

chip level Fig. 15 Safe operating area diode (SOA)

5SNA 1800E170100

ABB Switzer

land Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA 1554-03 Nov. 04

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

ic)-(jth ∑

=

i

τ

i 1 2 3 4 5

Ri(K/kW) 6.24 1.73 0.704 0.345

IGBT

τi(ms) 192 20.4 1.97 0.52

Ri(K/kW) 11.6 2.91 1.28 1.27

DIODE

τi(ms) 204 29.3 6.96 1.5

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

t [s]

Zth(j-h)

[K/W] IGBT, DIODE

Zth(j-c) IGBT

Zth(j-c) Diode

Fig. 16 Thermal impedance vs time