PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 C) Large photosensitive area 200 m APPLICATIONS Optical high-speed waveform measurements Optical communications G4176-03 G7096-03 G4176-01 G7096-01 DESCRIPTION HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176-03 features 30 ps response time for both rise & fall while keeping a low dark current (100 pA at Ta=25 C). The rise time of the InGaAs MSM Photodetector G7096-03 is 40 ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176-03 & G7096-03 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176-01 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2006 Hamamatsu Photonics K.K. ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) G4176 SERIES ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Item Symbol Bias Voltage Vb Peak Input Light Value Condition Pulse width Pulse width *1 1 ns Operating Temperature Top(a) Storage Temperature Tstg Unit 50 *2 mW Radiant sensitivity S mW Dark Current Id *2 -40 to +85 C -40 to +100 C *2: This value is under the condition that the light irradiate the whole effective area (200 m ) uniformly. When the irradiated area is smaller than effective area of the detector, the peak input light becomes smaller in proportional to the irradiate area. Symbol Condition Value Unit Spectral Response Range Vb = 7 V 450 to 870 nm Peak Response Wavelength p Vb = 7 V 850 nm Effective Sensitive Area A 0.2 Chip Size 1 0.2 1 Min. mm2 mm2 = 850 nm G4176-03 G4176-01 TO-5 G4176-03 (Unified with SMA connector) G4176-01 TO-18 Unit Max. 0.2 0.3 - A/W - 100 300 pA 0.2 X 10-15 3 X 10-15 - W/Hz1/2 0.2 X 10-15 4 X 10-15 - Terminal Capacitance Ct G4176-01 - 0.3 0.4 - 0.5 0.6 - 30 40 - 50 80 - 30 40 - 50 80 pF Rise Time G4176-03 tr 10 to 90 % G4176-01 ps Fall Time G4176-03 Package = 850 nm Typ. NEP *3 G4176-03 *4 GENERAL CHARACTERISTICS (Ta=25 C) Value Condition Symbol V *1: Duty ratio should be less than 50 %.(Even if the pulse width is 1 ns, when the duty ratio is >50 %, pulse width > 1ns is applied.) Item Item 10 5 1 ns ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25 C, Vb=7 V) 90 to 10 % tf G4176-01 ps *3: Noise Equivalent Power *4: Value on Chip Figure 1: Optical Pulse Response G4176-01 G4176-03 (Including time response of light source, assembly circuit and oscilloscope) (Including time response of light source, bias-tee and oscilloscope) (Vb = 7 V) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.6 0.5 0.4 (Vb = 7 V) 1.1 Output (arb. unit) Output (arb. unit) 1.1 0.3 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0 0 Time (0.1 ns/div) Time (0.1 ns/div) Figure 2: Spectral Response Figure 3: Rise Time vs. Applied Voltage (G4176-03) (Vb = 7 V) 100 48 44 10-1 Rise-time (ps) Radiant Sensitivity (A/W) 46 -2 10 42 40 38 36 34 32 -3 10 300 30 400 500 600 700 800 Wavelength (nm) 900 1000 0 1 2 3 4 5 6 Vb (V) 7 8 9 10 11 G7096 SERIES ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Item Symbol Bias Voltage Vb Peak Input Light 10 Pulse width Pulse width *1 10 1 ns 2 1 ns Operating Temperature Top(a) Storage Temperature Value Condition Tstg *2 *2 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25 C, Vb=7 V) Unit mW Radiant sensitivity S mW Dark Current Id -40 to +85 C -40 to +100 C *2: This value is under the condition that the light irradiate the whole effective area (200 m ) uniformly. When the irradiated area is smaller than effective area of the detector, the peak input light becomes smaller in proportional to the irradiate area. Symbol Condition Value Unit Spectral Response Range Vb = 7 V 850 to 1650 nm Peak Response Wavelength p Vb = 7 V 1500 nm A 0.2 Chip Size 1 0.2 mm2 1 mm2 TO-5 (Unified with SMA connector) G7096-01 TO-18 Unit Min. Typ. Max. 0.2 0.4 - A/W - 5 20 A 0.2 X 10-10 2 X 10-10 - W/Hz1/2 0.2 X 10-10 3 X 10-10 - = 1.3 m = 1.3 m G7096-03 G7096-01 Terminal Capacitance Ct G7096-01 - 0.7 0.8 - 0.9 1.0 - 40 60 - 60 80 - 60 100 - 80 100 pF Rise Time G7096-03 tr 10 to 90 % G7096-01 ps Fall Time G7096-03 Package G7096-03 Value Condition NEP *3 G7096-03 *4 GENERAL CHARACTERISTICS (Ta=25 C) Effective Sensitive Area Symbol V *1: Duty ratio should be less than 50 %.(Even if the pulse width is 1 ns, when the duty ratio is >50 %, pulse width > 1ns is applied.) Item Item 90 to 10 % tf G7096-01 ps *3: Noise Equivalent Power *4: Value on Chip Figure 4: Optical Pulse Response G7096-01 G7096-03 (Including time response of light source, assembly circuit and oscilloscope) (Including time response of light source, bias-tee and oscilloscope) (Vb = 7 V) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.6 0.5 0.4 (Vb = 7 V) 1.1 Output (arb. unit) Output (arb. unit) 1.1 0.7 0.6 0.5 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 Time (0.1 ns/div) Time (0.1 ns/div) Figure 6: Rise Time vs. Applied Voltage (G7096-03) Figure 5: Spectral Response (Vb = 7 V) 100 60 10-1 Rise-time (ps) Radiant Sensitivity (A/W) 55 10-2 50 45 40 35 10-3 0.6 30 0.8 1.0 1.2 1.4 Wavelength (m) 1.6 1.8 0 1 2 3 4 5 6 Vb (V) 7 8 9 10 11 ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176-03 G4176-01 G7096-03 G7096-01 Output Optical Input Electric Output G4176-03 (G7096-03) Case Lead 100 BIAS-TEE Electric Output Optical Input BIAS CASE Coaxial Connector G4176-01 (G7096-01) 10 nF BIAS 10 k Power Supply Power Supply - (or +) + (or -) + (or -) - (or +) DIMENSIONAL OUTLINES (Unit : mm) G4176-03 G4176-01 G7096-03 G7096-01 5.4 4.7 12 min. 9.6 3.0 2.0 SENSITIVE SURFACE 3.6 10 8.2 2.3 SENSITIVE SURFACE 1.2 CHIP CHIP 1/4-36UNS-2B 7.9 0.45LEAD CASE BIAS / OUTPUT* OUTPUT/BIAS* OUTPUT / BIAS* CASE (BOTTOM VIEW) (BOTTOM VIEW) *Both polarities of the bias voltage are available. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, Shizuoka, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: laser-g@lsr.hpk.co.jp U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se Cat. No. LPRD1022E03 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it JUL. 2006 Printed in Japan