© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 6 1Publication Order Number:
MJH11017/D
MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Preferred Device
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
•High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
•Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
•Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
•Monolithic Construction
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
VCEO
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
150
200
250
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
VCB
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
150
200
250
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
VEB
ÎÎÎ
5.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
− Peak (Note 1)
ÎÎÎ
Î
Î
Î
ÎÎÎ
IC
ÎÎÎ
Î
Î
Î
ÎÎÎ
15
30
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎ
ÎÎÎ
0.5
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎ
Î
Î
Î
ÎÎÎ
PD
ÎÎÎ
Î
Î
Î
ÎÎÎ
150
1.2
ÎÎÎ
Î
Î
Î
ÎÎÎ
W
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature
Range
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎ
ÎÎÎ
–65 to
+150
ÎÎÎ
ÎÎÎ
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎ
ÎÎÎ
RqJC
ÎÎÎ
ÎÎÎ
0.83
ÎÎÎ
ÎÎÎ
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use
and best overall value.
SOT−93
(TO−218)
CASE 340D
STYLE 1
15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
MARKING
DIAGRAM
http://onsemi.com
AYWWG
MJH110xx
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
Device Package Shipping
ORDERING INFORMATION
MJH11017 SOT−93 30 Units / Rail
MJH11017G SOT−93
(Pb−Free) 30 Units / Rail
MJH11018 SOT−93 30 Units / Rail
MJH11018G SOT−93
(Pb−Free) 30 Units / Rail
MJH11019 SOT−93 30 Units / Rail
MJH11019G SOT−93
(Pb−Free) 30 Units / Rail
MJH11020 SOT−93 30 Units / Rail
MJH11020G SOT−93
(Pb−Free) 30 Units / Rail
MJH11021 SOT−93 30 Units / Rail
MJH11021G SOT−93
(Pb−Free) 30 Units / Rail
MJH11022 SOT−93 30 Units / Rail
MJH11022G SOT−93
(Pb−Free) 30 Units / Rail
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
http://onsemi.com
2
PD, POWER DISSIPATION (WATTS)
160
0
TC, CASE TEMPERATURE (°C)
40 60 100 120 16080 14020
Figure 1. Power Derating
0
20
40
60
80
100
140
120
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 0.1 Adc, IB = 0) MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
150
200
250
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018
(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020
(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
−
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEV
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.5
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
400
100
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
15,000
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.5
4.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
ÎÎÎÎ
ÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
3.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance MJH11018, MJH11020, MJH11022
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021
ÎÎÎÎ
ÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
400
600
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
75
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Typical
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
NPN
ÎÎÎÎ
ÎÎÎÎ
PNP
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
ÎÎÎÎ
ÎÎÎÎ
td
ÎÎÎ
ÎÎÎ
150
ÎÎÎÎ
ÎÎÎÎ
75
ÎÎÎ
ÎÎÎ
ns
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rise Time
ÎÎÎÎ
ÎÎÎÎ
tr
ÎÎÎ
ÎÎÎ
1.2
ÎÎÎÎ
ÎÎÎÎ
0.5
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎ
ÎÎÎÎ
ts
ÎÎÎ
ÎÎÎ
4.4
ÎÎÎÎ
ÎÎÎÎ
2.7
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎ
ÎÎÎÎ
tf
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎÎ
ÎÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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3
Figure 2. Switching Times Test Circuit
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB ≈ 100 mA
MSD6100 used below IB ≈ 100 mA
tr, tf ≤ 10 ns
Duty Cycle = 1.0%
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
V2
APPROX
+12 V
0
V1
APPROX
−8.0 V
VCC
100 V
TUT
SCOPE
RB
+4.0 V
D1
51
RC
25 ms
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1.0 2.0 5.0 10 20 50 100 200 500
RqJC(t) = r(t) RqJC
RqJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.1 0.50.2
RESISTANCE (NORMALIZED)
1000
0.5
0.3
0.07
0.03
0.01 0.03 3.0 30 3000.3
0.2
0.1
0.05
0.02
0.01
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 ms
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
1.0 ms
5.0 ms
0.1 ms
dc
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
30
2.0
IC, COLLECTOR CURRENT (AMPS)
3.0 10
10
0.5
0.2
5.0
20
1.0
20 100
0
TC = 25°C SINGLE PULSE
5.0 50 25015030
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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4
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
20
30
140
IC, COLLECTOR CURRENT (AMPS)
60 180100
10
20
260220
0
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
L = 200 mH
IC/IB1 ≥ 50
TC = 100°C
VBE(off) = 0−5.0 V
RBE = 47 W
DUTY CYCLE = 10%
0
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
TC = 150°C
0
00
0
00
0
00
0
00
0
00
0
00
PNP NPN
Figure 6. DC Current Gain
0.2 153.01.00.5 5.0 100.3
TC = 150°C
25°C
−55 °C
VCE = 5.0 V
IC, COLLECTOR CURRENT (AMPS)
00
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
PNP NPN
5
00
2
00
0.7
1000
2000
5000
10,000
0.2 153.01.00.5 5.0 100.3 7.0
25°C
−55 °C
VCE = 5.0 V
100
500
200
0.7
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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5
VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
IB, BASE CURRENT (mA)
1.0
1.0
2.0 5.0
3.0
2.5
4.0
3.5
3.0 10 30
4.5
2.0
50 100
IC = 15 A
20
Figure 7. Collector Saturation Region
Figure 8. “On” Voltages
1.5
300 500 1000200
TJ = 25°C
IC = 10 A
IC = 5.0 A
IC, COLLECTOR CURRENT (AMPS)
3.0
2.5
VOLTAGE (VOLTS)
4.0
3.5
2.0
0.5
0.2 0.5 5.00.3 1.00.7 3.0
TJ = 25°C
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
VCE(sat) @ IC/IB = 100
7.02.0 10 20
IB, BASE CURRENT (mA)
1.0 2.0 5.03.0 10 30 50 100
IC = 15 A
20 300 500200
TJ = 25°C
IC = 10 A
IC = 5.0 A
IC, COLLECTOR CURRENT (AMPS)
1.5
1.0
1000
PNP NPN
PNP NPN
3.0
2.5
4.0
3.5
2.0
0.5
0.2 0.5 5.01.00.7
TJ = 25°C
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
VCE(sat) @ IC/IB = 100
2.0 10 20
1.5
1.0
1.0
3.0
2.5
4.0
3.5
4.5
2.0
1.5
BASE
EMITTER
COLLECTOR
BASE
EMITTER
COLLECTOR
PNP NPN
Figure 9. Darlington Schematic
MJH11018
MJH11020
MJH11022
MJH11017
MJH11019
MJH11021
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
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6
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
D
VG
K
SL
U
BQ
123
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
EC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A−−− 20.35 −−− 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L−−− 16.20 −−− 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
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