MMBD1201 / 1203 / 1204 / 1205
MMBD1200 series, Rev. C
MMBD1201 / 1203 / 1204 / 1205
Small Signal Diodes
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MARKING
MMBD1201 24 MMBD1203 26
MMBD1204 27 MMBD1205 28
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 100 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg Storage Temperature Range -55 to +150 °C
TJ Operating Junction Temperature 150 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
12
3
24
3
1
2
SOT-23
Symbol
Parameter Test Conditions Min
Max
Units
VR Breakdown Voltage IR = 100 µA 100 V
VF Forward Voltage IF = 1.0 mA
IF = 10 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
550
660
820
0.87
-
600
740
920
1.0
1.1
mV
mV
mV
V
V
IR Reverse Current VR = 20 V
VR = 50 V
VR = 50 V, TA = 150°C 25
50
5.0
nA
nA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 4.0 ns
Connection Diagrams
1201 1203
1204 1205
11
3
21
2
2
3
3
3
1
2NC
MMBD1201 / 1203 / 1204 / 1205
MMBD1200 series, Rev. C
Typical Characteristics
Small Signal Diode
(continued)
110
120
130
140
150
1 2 3 5 10 2 0 30 5 0 1 0 0
Ta= 25 C
Reverse Voltage, V
R [V]
Rev e rs e Cu rre n t, IR [u A ] 0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R [nA]
Reverse Volta
g
e, V
R
[
V
]
250
300
350
400
450
1 2 3 5 10 20 3 0 50 100
Ta= 25 C
Forward V oltage, V
F [m V ]
Forward C u rrent, IF [uA]
450
500
550
600
650
700
0. 1 0.2 0.3 0. 5 1 2 3 5 10
Ta= 25 C
Forw ard V oltage, V
F
[m V ]
Fo rward Curre nt, IF [m A ]
0.6
0.8
1.0
1.2
1.4
10 2 0 3 0 50 1 00 2 00 3 00 5 00
Ta= 25 C
Forward Voltage, V
F
[V]
Forward Current, I
F
[mA ] 0 2 4 6 8 10 12 14
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse Voltage [V]
Figure 1. Reverse V oltage vs Reverse Current
BV - 1.0 to 100uA Figure 2. Reverse Current vs Reverse V oltage
IR - 10 to 100 V
Figure 3. Forward V oltage vs Forward Current
VF - 1.0 to 100 uA Figure 4. Forward V oltage vs Forward Current
VF - 0.1 to 10 mA
Figure 5. Forward V oltage vs Forward Current
VF - 10 - 800 mA Figure 6. Total Capacitance vs Reverse V oltage
°°
°
°
°°
MMBD1201 / 1203 / 1204 / 1205
MMBD1200 series, Rev. C
Typical Characteristics (continued)
Small Signal Diode
(continued)
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [nS]
Reverse Current [mA]
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
C u rren t [mA]
Am b ient Te mperature, TA [ C]
0 50 100 150 200
0
100
200
300
400
500
DO-35 Pkg
SOT-23 Pkg
Power Dissipation, P
D
[m W]
Average Tem perature, IO [ C ]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
Figure 9. Power Derating Curve
°
°
°
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This datasheet contains the design specifications for
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any manner without notice.
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